Mechanism of diamond growth on carbide substrates using fluorocarbon gases

K. J. Grannen, Robert P. H. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The etching and growth behavior of diamond in CxFy/O2/ H2 plasmas have been investigated. Using this gas mixture, diamond can nucleate on untreated tungsten carbide and silicon carbide substrates up to a density of 108 crystallites/cm2. This compares to a density of 102 crystallites/cm2 when using a methane gas mixture and these same substrates. The increase in nucleation density is attributed to the selective etching of the non-carbon component of the carbide with subsequent nucleation on the carbon enriched surface. The effect of temperature on the nucleation rate has been studied with a lower nucleation density at higher growth temperatures.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsSeshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
PublisherPubl by Materials Research Society
Pages511-516
Number of pages6
Volume317
ISBN (Print)1558992162
Publication statusPublished - 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/3/93

Fingerprint

Fluorocarbons
Diamond
Carbides
Diamonds
Nucleation
Gases
Substrates
Crystallites
Gas mixtures
Etching
Tungsten carbide
Methane
Growth temperature
Silicon carbide
Carbon
Plasmas
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Grannen, K. J., & Chang, R. P. H. (1994). Mechanism of diamond growth on carbide substrates using fluorocarbon gases. In S. B. Desu, D. B. Beach, B. W. Wessels, & S. Gokoglu (Eds.), Materials Research Society Symposium Proceedings (Vol. 317, pp. 511-516). Publ by Materials Research Society.

Mechanism of diamond growth on carbide substrates using fluorocarbon gases. / Grannen, K. J.; Chang, Robert P. H.

Materials Research Society Symposium Proceedings. ed. / Seshu B. Desu; David B. Beach; Bruce W. Wessels; Suleyman Gokoglu. Vol. 317 Publ by Materials Research Society, 1994. p. 511-516.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Grannen, KJ & Chang, RPH 1994, Mechanism of diamond growth on carbide substrates using fluorocarbon gases. in SB Desu, DB Beach, BW Wessels & S Gokoglu (eds), Materials Research Society Symposium Proceedings. vol. 317, Publ by Materials Research Society, pp. 511-516, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/29/93.
Grannen KJ, Chang RPH. Mechanism of diamond growth on carbide substrates using fluorocarbon gases. In Desu SB, Beach DB, Wessels BW, Gokoglu S, editors, Materials Research Society Symposium Proceedings. Vol. 317. Publ by Materials Research Society. 1994. p. 511-516
Grannen, K. J. ; Chang, Robert P. H. / Mechanism of diamond growth on carbide substrates using fluorocarbon gases. Materials Research Society Symposium Proceedings. editor / Seshu B. Desu ; David B. Beach ; Bruce W. Wessels ; Suleyman Gokoglu. Vol. 317 Publ by Materials Research Society, 1994. pp. 511-516
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