Mechanisms of oxygen incorporation in indium-tin-oxide films deposited by laser ablation at room temperature

M. A. Morales-Paliza, R. F. Haglund, Leonard C Feldman

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The use of 18O2 as a background gas in pulsed-laser deposition (PLD) of indium-tin-oxide (ITO) films allows clear discrimination between the two oxygen sources in the films: target and background gas. A study of both stoichiometric and electrical properties of the ITO films in terms of the relative contributions of the two oxygen sources at different background-gas pressures is presented in this work. The film with lowest resistivity (∼4×10-4cm) incorporates 28% oxygen from the background gas as compared to the total oxygen in the film. This relatively strong oxygen incorporation from the background gas suggests a strong exchange rate between 16O from the target and 18O from the background gas in the "plume" phase of the PLD process.

Original languageEnglish
Pages (from-to)3757-3759
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number20
DOIs
Publication statusPublished - May 20 2002

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indium oxides
tin oxides
laser ablation
oxide films
room temperature
oxygen
gases
pulsed laser deposition
gas pressure
plumes
discrimination
electrical properties
electrical resistivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mechanisms of oxygen incorporation in indium-tin-oxide films deposited by laser ablation at room temperature. / Morales-Paliza, M. A.; Haglund, R. F.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 80, No. 20, 20.05.2002, p. 3757-3759.

Research output: Contribution to journalArticle

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