MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0)

M. Dalponte, H. Boudinov, L. V. Goncharova, E. Garfunkel, T. Gustafsson

Research output: Contribution to journalArticle

Abstract

Medium energy ion scattering was used to study the distribution of ion-implanted Sb dopant in Si with excess vacancies and separation by implanted oxygen (SIMOX) substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behaviours and distributions were observed for O and N pre-implanted Si. The oxygen-containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.

Original languageEnglish
Article number017
Pages (from-to)4222-4227
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume40
Issue number14
DOIs
Publication statusPublished - Jul 21 2007

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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