MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0)

M. Dalponte; H. Boudinov; L. V. Goncharova; E. Garfunkel; T. Gustafsson

doi:10.1088/0022-3727/40/14/017

MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0)

M. Dalponte, H. Boudinov, L. V. Goncharova, E. Garfunkel, T. Gustafsson

Rutgers University

Research output: Contribution to journal › Article

Abstract

Medium energy ion scattering was used to study the distribution of ion-implanted Sb dopant in Si with excess vacancies and separation by implanted oxygen (SIMOX) substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behaviours and distributions were observed for O and N pre-implanted Si. The oxygen-containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.

Original language	English
Article number	017
Pages (from-to)	4222-4227
Number of pages	6
Journal	Journal of Physics D: Applied Physics
Volume	40
Issue number	14
DOIs	https://doi.org/10.1088/0022-3727/40/14/017
Publication status	Published - Jul 21 2007

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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Dalponte, M., Boudinov, H., Goncharova, L. V., Garfunkel, E., & Gustafsson, T. (2007). MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0). Journal of Physics D: Applied Physics, 40(14), 4222-4227. [017]. https://doi.org/10.1088/0022-3727/40/14/017

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abstract = "Medium energy ion scattering was used to study the distribution of ion-implanted Sb dopant in Si with excess vacancies and separation by implanted oxygen (SIMOX) substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behaviours and distributions were observed for O and N pre-implanted Si. The oxygen-containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.",

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AU - Dalponte, M.

AU - Boudinov, H.

AU - Goncharova, L. V.

AU - Garfunkel, E.

AU - Gustafsson, T.

PY - 2007/7/21

Y1 - 2007/7/21

N2 - Medium energy ion scattering was used to study the distribution of ion-implanted Sb dopant in Si with excess vacancies and separation by implanted oxygen (SIMOX) substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behaviours and distributions were observed for O and N pre-implanted Si. The oxygen-containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.

AB - Medium energy ion scattering was used to study the distribution of ion-implanted Sb dopant in Si with excess vacancies and separation by implanted oxygen (SIMOX) substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behaviours and distributions were observed for O and N pre-implanted Si. The oxygen-containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.

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