Abstract
Medium energy ion scattering was used to study the distribution of ion-implanted Sb dopant in Si with excess vacancies and separation by implanted oxygen (SIMOX) substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behaviours and distributions were observed for O and N pre-implanted Si. The oxygen-containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.
| Original language | English |
|---|---|
| Article number | 017 |
| Pages (from-to) | 4222-4227 |
| Number of pages | 6 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 40 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - Jul 21 2007 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0). / Dalponte, M.; Boudinov, H.; Goncharova, L. V.; Garfunkel, Eric; Gustafsson, T.
In: Journal of Physics D: Applied Physics, Vol. 40, No. 14, 017, 21.07.2007, p. 4222-4227.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0)
AU - Dalponte, M.
AU - Boudinov, H.
AU - Goncharova, L. V.
AU - Garfunkel, Eric
AU - Gustafsson, T.
PY - 2007/7/21
Y1 - 2007/7/21
N2 - Medium energy ion scattering was used to study the distribution of ion-implanted Sb dopant in Si with excess vacancies and separation by implanted oxygen (SIMOX) substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behaviours and distributions were observed for O and N pre-implanted Si. The oxygen-containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.
AB - Medium energy ion scattering was used to study the distribution of ion-implanted Sb dopant in Si with excess vacancies and separation by implanted oxygen (SIMOX) substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behaviours and distributions were observed for O and N pre-implanted Si. The oxygen-containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.
UR - http://www.scopus.com/inward/record.url?scp=34547311128&partnerID=8YFLogxK
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U2 - 10.1088/0022-3727/40/14/017
DO - 10.1088/0022-3727/40/14/017
M3 - Article
AN - SCOPUS:34547311128
VL - 40
SP - 4222
EP - 4227
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 14
M1 - 017
ER -