Abstract
We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(1 0 0). The vacancy-rich layers were generated by implantation at 400 °C of 240 keV O2 + or N2 + ions and a dose of 2.5 × 1016 cm-2. The As dopant was introduced by implanting at 20 keV at room temperature to a dose of 5 × 1014 cm-2, followed by either rapid thermal annealing (RTA) or furnace annealing (FA). The results showed very good Si crystal quality after both thermal treatments, especially when compared to otherwise identical samples without pre-implanted O or N. Differences between the O and N pre-implanted samples were also observed, suggesting the occurrence of chemical effects in the crystal recovery and dopant diffusion processes.
| Original language | English |
|---|---|
| Pages (from-to) | 874-877 |
| Number of pages | 4 |
| Journal | Nuclear Inst. and Methods in Physics Research, B |
| Volume | 249 |
| Issue number | 1-2 SPEC. ISS. |
| DOIs | |
| Publication status | Published - Aug 2006 |
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Keywords
- Arsenic
- Ion implantation
- MEIS
- Nitrogen
- Oxygen
- Silicon
- Vacancies
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
Cite this
MEIS study of As implantation in O or N pre-implanted Si(0 0 1). / Dalponte, M.; Boudinov, H.; Goncharova, L. V.; Garfunkel, Eric; Gustafsson, T.
In: Nuclear Inst. and Methods in Physics Research, B, Vol. 249, No. 1-2 SPEC. ISS., 08.2006, p. 874-877.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - MEIS study of As implantation in O or N pre-implanted Si(0 0 1)
AU - Dalponte, M.
AU - Boudinov, H.
AU - Goncharova, L. V.
AU - Garfunkel, Eric
AU - Gustafsson, T.
PY - 2006/8
Y1 - 2006/8
N2 - We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(1 0 0). The vacancy-rich layers were generated by implantation at 400 °C of 240 keV O2 + or N2 + ions and a dose of 2.5 × 1016 cm-2. The As dopant was introduced by implanting at 20 keV at room temperature to a dose of 5 × 1014 cm-2, followed by either rapid thermal annealing (RTA) or furnace annealing (FA). The results showed very good Si crystal quality after both thermal treatments, especially when compared to otherwise identical samples without pre-implanted O or N. Differences between the O and N pre-implanted samples were also observed, suggesting the occurrence of chemical effects in the crystal recovery and dopant diffusion processes.
AB - We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(1 0 0). The vacancy-rich layers were generated by implantation at 400 °C of 240 keV O2 + or N2 + ions and a dose of 2.5 × 1016 cm-2. The As dopant was introduced by implanting at 20 keV at room temperature to a dose of 5 × 1014 cm-2, followed by either rapid thermal annealing (RTA) or furnace annealing (FA). The results showed very good Si crystal quality after both thermal treatments, especially when compared to otherwise identical samples without pre-implanted O or N. Differences between the O and N pre-implanted samples were also observed, suggesting the occurrence of chemical effects in the crystal recovery and dopant diffusion processes.
KW - Arsenic
KW - Ion implantation
KW - MEIS
KW - Nitrogen
KW - Oxygen
KW - Silicon
KW - Vacancies
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UR - http://www.scopus.com/inward/citedby.url?scp=33745812411&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2006.03.154
DO - 10.1016/j.nimb.2006.03.154
M3 - Article
AN - SCOPUS:33745812411
VL - 249
SP - 874
EP - 877
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-2 SPEC. ISS.
ER -