MEIS study of As implantation in O or N pre-implanted Si(0 0 1)

M. Dalponte, H. Boudinov, L. V. Goncharova, E. Garfunkel, T. Gustafsson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(1 0 0). The vacancy-rich layers were generated by implantation at 400 °C of 240 keV O2+ or N2+ ions and a dose of 2.5 × 1016 cm-2. The As dopant was introduced by implanting at 20 keV at room temperature to a dose of 5 × 1014 cm-2, followed by either rapid thermal annealing (RTA) or furnace annealing (FA). The results showed very good Si crystal quality after both thermal treatments, especially when compared to otherwise identical samples without pre-implanted O or N. Differences between the O and N pre-implanted samples were also observed, suggesting the occurrence of chemical effects in the crystal recovery and dopant diffusion processes.

Original languageEnglish
Pages (from-to)874-877
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume249
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - Aug 1 2006

Keywords

  • Arsenic
  • Ion implantation
  • MEIS
  • Nitrogen
  • Oxygen
  • Silicon
  • Vacancies

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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