MEIS study of As implantation in O or N pre-implanted Si(0 0 1)

M. Dalponte, H. Boudinov, L. V. Goncharova, Eric Garfunkel, T. Gustafsson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(1 0 0). The vacancy-rich layers were generated by implantation at 400 °C of 240 keV O2 + or N2 + ions and a dose of 2.5 × 1016 cm-2. The As dopant was introduced by implanting at 20 keV at room temperature to a dose of 5 × 1014 cm-2, followed by either rapid thermal annealing (RTA) or furnace annealing (FA). The results showed very good Si crystal quality after both thermal treatments, especially when compared to otherwise identical samples without pre-implanted O or N. Differences between the O and N pre-implanted samples were also observed, suggesting the occurrence of chemical effects in the crystal recovery and dopant diffusion processes.

Original languageEnglish
Pages (from-to)874-877
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume249
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - Aug 2006

Fingerprint

Arsenic
ion scattering
arsenic
Ion implantation
implantation
Doping (additives)
Scattering
Ions
dosage
annealing
Vacancies
chemical effects
crystals
furnaces
Crystals
Rapid thermal annealing
recovery
occurrences
energy
Furnaces

Keywords

  • Arsenic
  • Ion implantation
  • MEIS
  • Nitrogen
  • Oxygen
  • Silicon
  • Vacancies

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

MEIS study of As implantation in O or N pre-implanted Si(0 0 1). / Dalponte, M.; Boudinov, H.; Goncharova, L. V.; Garfunkel, Eric; Gustafsson, T.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 249, No. 1-2 SPEC. ISS., 08.2006, p. 874-877.

Research output: Contribution to journalArticle

Dalponte, M, Boudinov, H, Goncharova, LV, Garfunkel, E & Gustafsson, T 2006, 'MEIS study of As implantation in O or N pre-implanted Si(0 0 1)', Nuclear Inst. and Methods in Physics Research, B, vol. 249, no. 1-2 SPEC. ISS., pp. 874-877. https://doi.org/10.1016/j.nimb.2006.03.154
Dalponte, M. ; Boudinov, H. ; Goncharova, L. V. ; Garfunkel, Eric ; Gustafsson, T. / MEIS study of As implantation in O or N pre-implanted Si(0 0 1). In: Nuclear Inst. and Methods in Physics Research, B. 2006 ; Vol. 249, No. 1-2 SPEC. ISS. pp. 874-877.
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AU - Garfunkel, Eric

AU - Gustafsson, T.

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