MEIS study of As implantation in O or N pre-implanted Si(0 0 1)

M. Dalponte; H. Boudinov; L. V. Goncharova; E. Garfunkel; T. Gustafsson

doi:10.1016/j.nimb.2006.03.154

MEIS study of As implantation in O or N pre-implanted Si(0 0 1)

M. Dalponte, H. Boudinov, L. V. Goncharova, E. Garfunkel, T. Gustafsson

Rutgers University

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(1 0 0). The vacancy-rich layers were generated by implantation at 400 °C of 240 keV O₂⁺ or N₂⁺ ions and a dose of 2.5 × 10¹⁶ cm^-2. The As dopant was introduced by implanting at 20 keV at room temperature to a dose of 5 × 10¹⁴ cm^-2, followed by either rapid thermal annealing (RTA) or furnace annealing (FA). The results showed very good Si crystal quality after both thermal treatments, especially when compared to otherwise identical samples without pre-implanted O or N. Differences between the O and N pre-implanted samples were also observed, suggesting the occurrence of chemical effects in the crystal recovery and dopant diffusion processes.

Original language	English
Pages (from-to)	874-877
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	249
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2006.03.154
Publication status	Published - Aug 1 2006

Keywords

Arsenic
Ion implantation
MEIS
Nitrogen
Oxygen
Silicon
Vacancies

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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Dalponte, M., Boudinov, H., Goncharova, L. V., Garfunkel, E., & Gustafsson, T. (2006). MEIS study of As implantation in O or N pre-implanted Si(0 0 1). Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249(1-2 SPEC. ISS.), 874-877. https://doi.org/10.1016/j.nimb.2006.03.154

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abstract = "We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(1 0 0). The vacancy-rich layers were generated by implantation at 400 °C of 240 keV O2+ or N2+ ions and a dose of 2.5 × 1016 cm-2. The As dopant was introduced by implanting at 20 keV at room temperature to a dose of 5 × 1014 cm-2, followed by either rapid thermal annealing (RTA) or furnace annealing (FA). The results showed very good Si crystal quality after both thermal treatments, especially when compared to otherwise identical samples without pre-implanted O or N. Differences between the O and N pre-implanted samples were also observed, suggesting the occurrence of chemical effects in the crystal recovery and dopant diffusion processes.",

keywords = "Arsenic, Ion implantation, MEIS, Nitrogen, Oxygen, Silicon, Vacancies",

author = "M. Dalponte and H. Boudinov and Goncharova, {L. V.} and E. Garfunkel and T. Gustafsson",

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T1 - MEIS study of As implantation in O or N pre-implanted Si(0 0 1)

AU - Dalponte, M.

AU - Boudinov, H.

AU - Goncharova, L. V.

AU - Garfunkel, E.

AU - Gustafsson, T.

PY - 2006/8/1

Y1 - 2006/8/1

N2 - We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(1 0 0). The vacancy-rich layers were generated by implantation at 400 °C of 240 keV O2+ or N2+ ions and a dose of 2.5 × 1016 cm-2. The As dopant was introduced by implanting at 20 keV at room temperature to a dose of 5 × 1014 cm-2, followed by either rapid thermal annealing (RTA) or furnace annealing (FA). The results showed very good Si crystal quality after both thermal treatments, especially when compared to otherwise identical samples without pre-implanted O or N. Differences between the O and N pre-implanted samples were also observed, suggesting the occurrence of chemical effects in the crystal recovery and dopant diffusion processes.

AB - We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(1 0 0). The vacancy-rich layers were generated by implantation at 400 °C of 240 keV O2+ or N2+ ions and a dose of 2.5 × 1016 cm-2. The As dopant was introduced by implanting at 20 keV at room temperature to a dose of 5 × 1014 cm-2, followed by either rapid thermal annealing (RTA) or furnace annealing (FA). The results showed very good Si crystal quality after both thermal treatments, especially when compared to otherwise identical samples without pre-implanted O or N. Differences between the O and N pre-implanted samples were also observed, suggesting the occurrence of chemical effects in the crystal recovery and dopant diffusion processes.

KW - Arsenic

KW - Ion implantation

KW - MEIS

KW - Nitrogen

KW - Oxygen

KW - Silicon

KW - Vacancies

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