MEIS study of Sb implantation in O or N pre-implanted Si(001) and SIMOX

M. Dalponte, H. Boudinov, L. V. Goncharova, Eric Garfunkel, T. Gustafsson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Medium energy ion scattering (MEIS) was used to study distribution of ion-implanted Sb dopant in Si with excess vacancies and SIMOX substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behavior and distribution were observed for O and N pre-implanted Si. The oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.

Original languageEnglish
Title of host publicationECS Transactions
Pages433-441
Number of pages9
Volume4
Edition1
Publication statusPublished - 2006
Event21st International Symposium on Microelectronics Technology and Devices, SBMicro 2006 - Ouro Preto, Brazil
Duration: Aug 28 2006Sep 1 2006

Other

Other21st International Symposium on Microelectronics Technology and Devices, SBMicro 2006
CountryBrazil
CityOuro Preto
Period8/28/069/1/06

Fingerprint

Ion implantation
Doping (additives)
Scattering
Annealing
Vacancies
Ions
Heat treatment
Nitrogen
Oxygen
Substrates
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Dalponte, M., Boudinov, H., Goncharova, L. V., Garfunkel, E., & Gustafsson, T. (2006). MEIS study of Sb implantation in O or N pre-implanted Si(001) and SIMOX. In ECS Transactions (1 ed., Vol. 4, pp. 433-441)

MEIS study of Sb implantation in O or N pre-implanted Si(001) and SIMOX. / Dalponte, M.; Boudinov, H.; Goncharova, L. V.; Garfunkel, Eric; Gustafsson, T.

ECS Transactions. Vol. 4 1. ed. 2006. p. 433-441.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dalponte, M, Boudinov, H, Goncharova, LV, Garfunkel, E & Gustafsson, T 2006, MEIS study of Sb implantation in O or N pre-implanted Si(001) and SIMOX. in ECS Transactions. 1 edn, vol. 4, pp. 433-441, 21st International Symposium on Microelectronics Technology and Devices, SBMicro 2006, Ouro Preto, Brazil, 8/28/06.
Dalponte M, Boudinov H, Goncharova LV, Garfunkel E, Gustafsson T. MEIS study of Sb implantation in O or N pre-implanted Si(001) and SIMOX. In ECS Transactions. 1 ed. Vol. 4. 2006. p. 433-441
Dalponte, M. ; Boudinov, H. ; Goncharova, L. V. ; Garfunkel, Eric ; Gustafsson, T. / MEIS study of Sb implantation in O or N pre-implanted Si(001) and SIMOX. ECS Transactions. Vol. 4 1. ed. 2006. pp. 433-441
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