MEIS study of Sb implantation in O or N pre-implanted Si(001) and SIMOX

M. Dalponte, H. Boudinov, L. V. Goncharova, E. Garfunkel, T. Gustafsson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Medium energy ion scattering (MEIS) was used to study distribution of ion-implanted Sb dopant in Si with excess vacancies and SIMOX substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under these conditions. Different Sb annealing behavior and distribution were observed for O and N pre-implanted Si. The oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality after long annealing times. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and more uniform dopant distribution. Both pre-implanted samples, N and O, had a large dopant loss to the atmosphere during annealing.

Original languageEnglish
Title of host publication21st International Symposium on Microelectronics Technology and Devices, SBMicro 2006
Pages433-441
Number of pages9
Edition1
Publication statusPublished - Dec 1 2006
Event21st International Symposium on Microelectronics Technology and Devices, SBMicro 2006 - Ouro Preto, Brazil
Duration: Aug 28 2006Sep 1 2006

Publication series

NameECS Transactions
Number1
Volume4
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other21st International Symposium on Microelectronics Technology and Devices, SBMicro 2006
CountryBrazil
CityOuro Preto
Period8/28/069/1/06

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Dalponte, M., Boudinov, H., Goncharova, L. V., Garfunkel, E., & Gustafsson, T. (2006). MEIS study of Sb implantation in O or N pre-implanted Si(001) and SIMOX. In 21st International Symposium on Microelectronics Technology and Devices, SBMicro 2006 (1 ed., pp. 433-441). (ECS Transactions; Vol. 4, No. 1).