Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature

Christos D. Malliakas, Arief C. Wibowo, Zhifu Liu, John A. Peters, Maria Sebastian, Hosub Jin, Duck Young Chung, Arthur J Freeman, Bruce W. Wessels, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We demonstrate that mercury and antimony compounds with chalcogens (Q = S, Se, Te) and halogens (X = I, Cl, Br) can be a promising family for radiation detection materials. Chalcogen p-orbitals are usually located near the Fermi level and they are responsible for relative high mobilities but at the same time band gap decreases (from S to Te) due to their extended interactions. Halogens on the other hand have their bands well below the Fermi level and salts between transition metals and halogen are usually insulators. Incorporation of halogen atoms in a mercury or antimony chalcogenide framework can give rise to intermediate properties between the two end members (HgQ and HgX2), i.e. structures composed of heavy elements (Z > 40), wide band gap (1.6 - 2.5 eV), and high carrier mobilities. As a proof of concept, we will present two new chalcohalide families, Hg3Q2X2 and SbQX. Crystal growth of the Hg3Te2Br2 phase (7.8 g/cm3 and 2.5 eV) by a vapor transport method gave mm-sized single crystals with electrical resistivity values more in the GΩ.cm range. Preliminary data for mobility-lifetime products for both electron and hole carriers were around 10-5 cm2/V. SbSeI (5.8 g/cm3 and 1.7 eV) sample grown by relatively fast Bridgman technique showed an MΩ.cm range (2.8 × 106 Ω.cm) resistivity with a similar order of magnitude (10-4 cm2/V) of mobility-lifetime products for both electron and hole carriers.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8507
DOIs
Publication statusPublished - 2012
EventHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV - San Diego, CA, United States
Duration: Aug 13 2012Aug 15 2012

Other

OtherHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
CountryUnited States
CitySan Diego, CA
Period8/13/128/15/12

Fingerprint

Antimony
Halogens
Mercury
antimony
Fermi level
halogens
Semiconductors
Antimony compounds
Energy gap
Chalcogens
Mercury compounds
Radiation
Semiconductor materials
Electrons
Carrier mobility
room temperature
Band Gap
radiation
Crystal growth
Transition metals

Keywords

  • γ-ray Detector
  • Antimony chalcohalide
  • Mercury chalcohalide
  • Mobility-lifetime product
  • Semiconductor
  • X-ray detector

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Malliakas, C. D., Wibowo, A. C., Liu, Z., Peters, J. A., Sebastian, M., Jin, H., ... Kanatzidis, M. G. (2012). Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8507). [85070F] https://doi.org/10.1117/12.929858

Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature. / Malliakas, Christos D.; Wibowo, Arief C.; Liu, Zhifu; Peters, John A.; Sebastian, Maria; Jin, Hosub; Chung, Duck Young; Freeman, Arthur J; Wessels, Bruce W.; Kanatzidis, Mercouri G.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8507 2012. 85070F.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Malliakas, CD, Wibowo, AC, Liu, Z, Peters, JA, Sebastian, M, Jin, H, Chung, DY, Freeman, AJ, Wessels, BW & Kanatzidis, MG 2012, Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8507, 85070F, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, San Diego, CA, United States, 8/13/12. https://doi.org/10.1117/12.929858
Malliakas CD, Wibowo AC, Liu Z, Peters JA, Sebastian M, Jin H et al. Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8507. 2012. 85070F https://doi.org/10.1117/12.929858
Malliakas, Christos D. ; Wibowo, Arief C. ; Liu, Zhifu ; Peters, John A. ; Sebastian, Maria ; Jin, Hosub ; Chung, Duck Young ; Freeman, Arthur J ; Wessels, Bruce W. ; Kanatzidis, Mercouri G. / Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8507 2012.
@inproceedings{86390d742b6e42488ab60e8dc9455f7c,
title = "Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature",
abstract = "We demonstrate that mercury and antimony compounds with chalcogens (Q = S, Se, Te) and halogens (X = I, Cl, Br) can be a promising family for radiation detection materials. Chalcogen p-orbitals are usually located near the Fermi level and they are responsible for relative high mobilities but at the same time band gap decreases (from S to Te) due to their extended interactions. Halogens on the other hand have their bands well below the Fermi level and salts between transition metals and halogen are usually insulators. Incorporation of halogen atoms in a mercury or antimony chalcogenide framework can give rise to intermediate properties between the two end members (HgQ and HgX2), i.e. structures composed of heavy elements (Z > 40), wide band gap (1.6 - 2.5 eV), and high carrier mobilities. As a proof of concept, we will present two new chalcohalide families, Hg3Q2X2 and SbQX. Crystal growth of the Hg3Te2Br2 phase (7.8 g/cm3 and 2.5 eV) by a vapor transport method gave mm-sized single crystals with electrical resistivity values more in the GΩ.cm range. Preliminary data for mobility-lifetime products for both electron and hole carriers were around 10-5 cm2/V. SbSeI (5.8 g/cm3 and 1.7 eV) sample grown by relatively fast Bridgman technique showed an MΩ.cm range (2.8 × 106 Ω.cm) resistivity with a similar order of magnitude (10-4 cm2/V) of mobility-lifetime products for both electron and hole carriers.",
keywords = "γ-ray Detector, Antimony chalcohalide, Mercury chalcohalide, Mobility-lifetime product, Semiconductor, X-ray detector",
author = "Malliakas, {Christos D.} and Wibowo, {Arief C.} and Zhifu Liu and Peters, {John A.} and Maria Sebastian and Hosub Jin and Chung, {Duck Young} and Freeman, {Arthur J} and Wessels, {Bruce W.} and Kanatzidis, {Mercouri G}",
year = "2012",
doi = "10.1117/12.929858",
language = "English",
isbn = "9780819492241",
volume = "8507",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature

AU - Malliakas, Christos D.

AU - Wibowo, Arief C.

AU - Liu, Zhifu

AU - Peters, John A.

AU - Sebastian, Maria

AU - Jin, Hosub

AU - Chung, Duck Young

AU - Freeman, Arthur J

AU - Wessels, Bruce W.

AU - Kanatzidis, Mercouri G

PY - 2012

Y1 - 2012

N2 - We demonstrate that mercury and antimony compounds with chalcogens (Q = S, Se, Te) and halogens (X = I, Cl, Br) can be a promising family for radiation detection materials. Chalcogen p-orbitals are usually located near the Fermi level and they are responsible for relative high mobilities but at the same time band gap decreases (from S to Te) due to their extended interactions. Halogens on the other hand have their bands well below the Fermi level and salts between transition metals and halogen are usually insulators. Incorporation of halogen atoms in a mercury or antimony chalcogenide framework can give rise to intermediate properties between the two end members (HgQ and HgX2), i.e. structures composed of heavy elements (Z > 40), wide band gap (1.6 - 2.5 eV), and high carrier mobilities. As a proof of concept, we will present two new chalcohalide families, Hg3Q2X2 and SbQX. Crystal growth of the Hg3Te2Br2 phase (7.8 g/cm3 and 2.5 eV) by a vapor transport method gave mm-sized single crystals with electrical resistivity values more in the GΩ.cm range. Preliminary data for mobility-lifetime products for both electron and hole carriers were around 10-5 cm2/V. SbSeI (5.8 g/cm3 and 1.7 eV) sample grown by relatively fast Bridgman technique showed an MΩ.cm range (2.8 × 106 Ω.cm) resistivity with a similar order of magnitude (10-4 cm2/V) of mobility-lifetime products for both electron and hole carriers.

AB - We demonstrate that mercury and antimony compounds with chalcogens (Q = S, Se, Te) and halogens (X = I, Cl, Br) can be a promising family for radiation detection materials. Chalcogen p-orbitals are usually located near the Fermi level and they are responsible for relative high mobilities but at the same time band gap decreases (from S to Te) due to their extended interactions. Halogens on the other hand have their bands well below the Fermi level and salts between transition metals and halogen are usually insulators. Incorporation of halogen atoms in a mercury or antimony chalcogenide framework can give rise to intermediate properties between the two end members (HgQ and HgX2), i.e. structures composed of heavy elements (Z > 40), wide band gap (1.6 - 2.5 eV), and high carrier mobilities. As a proof of concept, we will present two new chalcohalide families, Hg3Q2X2 and SbQX. Crystal growth of the Hg3Te2Br2 phase (7.8 g/cm3 and 2.5 eV) by a vapor transport method gave mm-sized single crystals with electrical resistivity values more in the GΩ.cm range. Preliminary data for mobility-lifetime products for both electron and hole carriers were around 10-5 cm2/V. SbSeI (5.8 g/cm3 and 1.7 eV) sample grown by relatively fast Bridgman technique showed an MΩ.cm range (2.8 × 106 Ω.cm) resistivity with a similar order of magnitude (10-4 cm2/V) of mobility-lifetime products for both electron and hole carriers.

KW - γ-ray Detector

KW - Antimony chalcohalide

KW - Mercury chalcohalide

KW - Mobility-lifetime product

KW - Semiconductor

KW - X-ray detector

UR - http://www.scopus.com/inward/record.url?scp=84872966065&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872966065&partnerID=8YFLogxK

U2 - 10.1117/12.929858

DO - 10.1117/12.929858

M3 - Conference contribution

SN - 9780819492241

VL - 8507

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -