Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection

Hao Li, Fang Meng, Christos D. Malliakas, Zhifu Liu, Duck Young Chung, Bruce Wessels, Mercouri G Kanatzidis

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Abstract

Hg3Se2Br2 is a wide band gap semiconductor (2.22 eV) with high density (7.598 g/cm3) and crystallizes in the monoclinic space group C2/m with cell parameters of a = 17.496 (4) Å, b = 9.3991 (19) Å, c = 9.776(2) Å, β = 90.46(3)°, V = 1607.6(6) Å3. It melts congruently at a low temperature, 566 °C, which allows for an easy single crystal growth directly from the stoichiometric melt. Single crystals of Hg3Se2Br2 up to 1 cm long have been grown using the Bridgman method. Hg3Se2Br2 single crystals exhibit a strong photocurrent response when exposed to Ag X-ray and blue diode laser. The resistivity of Hg3Se2Br2 measured by the two probe method is on the order of 1011 cm, and the mobility-lifetime product (μτ) of the electron and hole carriers estimated from the energy spectroscopy under Ag X-ray radiation are (μτ)e ≈ 1.4 × 10-4 cm2/V and (μτ)h ≈ 9.2 × 10-5 cm2/V. Electronic structure calculations at the density functional theory level indicate a direct band gap and a relatively small effective mass for carriers. On the basis of the photoconductivity and hard X-ray spectrum, Hg3Se2Br2 is a promising candidate for X-ray and γ-ray radiation detection at room temperature.

Original languageEnglish
Pages (from-to)6446-6453
Number of pages8
JournalCrystal Growth and Design
Volume16
Issue number11
DOIs
Publication statusPublished - Nov 2 2016

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ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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