Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection

Hao Li, Fang Meng, Christos D. Malliakas, Zhifu Liu, Duck Young Chung, Bruce Wessels, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Hg3Se2Br2 is a wide band gap semiconductor (2.22 eV) with high density (7.598 g/cm3) and crystallizes in the monoclinic space group C2/m with cell parameters of a = 17.496 (4) Å, b = 9.3991 (19) Å, c = 9.776(2) Å, β = 90.46(3)°, V = 1607.6(6) Å3. It melts congruently at a low temperature, 566 °C, which allows for an easy single crystal growth directly from the stoichiometric melt. Single crystals of Hg3Se2Br2 up to 1 cm long have been grown using the Bridgman method. Hg3Se2Br2 single crystals exhibit a strong photocurrent response when exposed to Ag X-ray and blue diode laser. The resistivity of Hg3Se2Br2 measured by the two probe method is on the order of 1011 cm, and the mobility-lifetime product (μτ) of the electron and hole carriers estimated from the energy spectroscopy under Ag X-ray radiation are (μτ)e ≈ 1.4 × 10-4 cm2/V and (μτ)h ≈ 9.2 × 10-5 cm2/V. Electronic structure calculations at the density functional theory level indicate a direct band gap and a relatively small effective mass for carriers. On the basis of the photoconductivity and hard X-ray spectrum, Hg3Se2Br2 is a promising candidate for X-ray and γ-ray radiation detection at room temperature.

Original languageEnglish
Pages (from-to)6446-6453
Number of pages8
JournalCrystal Growth and Design
Volume16
Issue number11
DOIs
Publication statusPublished - Nov 2 2016

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Mercury
Semiconductor materials
Radiation
X rays
Single crystals
radiation
single crystals
x rays
Crystal growth from melt
Bridgman method
Photoconductivity
Crystallization
Photocurrents
Crystal growth
photoconductivity
Electronic structure
Density functional theory
photocurrents
Semiconductor lasers
crystal growth

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection. / Li, Hao; Meng, Fang; Malliakas, Christos D.; Liu, Zhifu; Chung, Duck Young; Wessels, Bruce; Kanatzidis, Mercouri G.

In: Crystal Growth and Design, Vol. 16, No. 11, 02.11.2016, p. 6446-6453.

Research output: Contribution to journalArticle

Li, H, Meng, F, Malliakas, CD, Liu, Z, Chung, DY, Wessels, B & Kanatzidis, MG 2016, 'Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection', Crystal Growth and Design, vol. 16, no. 11, pp. 6446-6453. https://doi.org/10.1021/acs.cgd.6b01118
Li H, Meng F, Malliakas CD, Liu Z, Chung DY, Wessels B et al. Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection. Crystal Growth and Design. 2016 Nov 2;16(11):6446-6453. https://doi.org/10.1021/acs.cgd.6b01118
Li, Hao ; Meng, Fang ; Malliakas, Christos D. ; Liu, Zhifu ; Chung, Duck Young ; Wessels, Bruce ; Kanatzidis, Mercouri G. / Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection. In: Crystal Growth and Design. 2016 ; Vol. 16, No. 11. pp. 6446-6453.
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AB - Hg3Se2Br2 is a wide band gap semiconductor (2.22 eV) with high density (7.598 g/cm3) and crystallizes in the monoclinic space group C2/m with cell parameters of a = 17.496 (4) Å, b = 9.3991 (19) Å, c = 9.776(2) Å, β = 90.46(3)°, V = 1607.6(6) Å3. It melts congruently at a low temperature, 566 °C, which allows for an easy single crystal growth directly from the stoichiometric melt. Single crystals of Hg3Se2Br2 up to 1 cm long have been grown using the Bridgman method. Hg3Se2Br2 single crystals exhibit a strong photocurrent response when exposed to Ag X-ray and blue diode laser. The resistivity of Hg3Se2Br2 measured by the two probe method is on the order of 1011 cm, and the mobility-lifetime product (μτ) of the electron and hole carriers estimated from the energy spectroscopy under Ag X-ray radiation are (μτ)e ≈ 1.4 × 10-4 cm2/V and (μτ)h ≈ 9.2 × 10-5 cm2/V. Electronic structure calculations at the density functional theory level indicate a direct band gap and a relatively small effective mass for carriers. On the basis of the photoconductivity and hard X-ray spectrum, Hg3Se2Br2 is a promising candidate for X-ray and γ-ray radiation detection at room temperature.

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