Mesostructured non-oxidic solids with adjustable worm-hole shaped pores: M-Ge-Q (Q = S, Se) frameworks based on tetrahedral [Ge4Q10]4- clusters

Michael Wachhold, K. Kasthuri Rangan, Simon J L Billinge, Valeri Petkov, Joy Heising, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

A new class of mesostructured semiconducting materials, M-Ge-Q (Q = S,Se) were synthesized and characterized. The materials possess an amorphous, three-dimensional framework structure in which simple adamante clusters are the basic building blocks. The application of formamide led to a hexagonally ordered pore structure and a different stoichiometry, whereas, H2O/alcohol mixtures favored disordered pore structure with worm-hole character. All compounds are wide bandgap semiconductors, the Se phases showing lower values than the sulfide analogs.

Original languageEnglish
Pages (from-to)85-91
Number of pages7
JournalAdvanced Materials
Volume12
Issue number2
Publication statusPublished - Jan 2000

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Pore structure
Sulfides
Stoichiometry
Energy gap
Alcohols
Semiconductor materials
formamide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Mesostructured non-oxidic solids with adjustable worm-hole shaped pores : M-Ge-Q (Q = S, Se) frameworks based on tetrahedral [Ge4Q10]4- clusters. / Wachhold, Michael; Rangan, K. Kasthuri; Billinge, Simon J L; Petkov, Valeri; Heising, Joy; Kanatzidis, Mercouri G.

In: Advanced Materials, Vol. 12, No. 2, 01.2000, p. 85-91.

Research output: Contribution to journalArticle

Wachhold, Michael ; Rangan, K. Kasthuri ; Billinge, Simon J L ; Petkov, Valeri ; Heising, Joy ; Kanatzidis, Mercouri G. / Mesostructured non-oxidic solids with adjustable worm-hole shaped pores : M-Ge-Q (Q = S, Se) frameworks based on tetrahedral [Ge4Q10]4- clusters. In: Advanced Materials. 2000 ; Vol. 12, No. 2. pp. 85-91.
@article{16338901be5b41b383ac3c2e1649fe2a,
title = "Mesostructured non-oxidic solids with adjustable worm-hole shaped pores: M-Ge-Q (Q = S, Se) frameworks based on tetrahedral [Ge4Q10]4- clusters",
abstract = "A new class of mesostructured semiconducting materials, M-Ge-Q (Q = S,Se) were synthesized and characterized. The materials possess an amorphous, three-dimensional framework structure in which simple adamante clusters are the basic building blocks. The application of formamide led to a hexagonally ordered pore structure and a different stoichiometry, whereas, H2O/alcohol mixtures favored disordered pore structure with worm-hole character. All compounds are wide bandgap semiconductors, the Se phases showing lower values than the sulfide analogs.",
author = "Michael Wachhold and Rangan, {K. Kasthuri} and Billinge, {Simon J L} and Valeri Petkov and Joy Heising and Kanatzidis, {Mercouri G}",
year = "2000",
month = "1",
language = "English",
volume = "12",
pages = "85--91",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "2",

}

TY - JOUR

T1 - Mesostructured non-oxidic solids with adjustable worm-hole shaped pores

T2 - M-Ge-Q (Q = S, Se) frameworks based on tetrahedral [Ge4Q10]4- clusters

AU - Wachhold, Michael

AU - Rangan, K. Kasthuri

AU - Billinge, Simon J L

AU - Petkov, Valeri

AU - Heising, Joy

AU - Kanatzidis, Mercouri G

PY - 2000/1

Y1 - 2000/1

N2 - A new class of mesostructured semiconducting materials, M-Ge-Q (Q = S,Se) were synthesized and characterized. The materials possess an amorphous, three-dimensional framework structure in which simple adamante clusters are the basic building blocks. The application of formamide led to a hexagonally ordered pore structure and a different stoichiometry, whereas, H2O/alcohol mixtures favored disordered pore structure with worm-hole character. All compounds are wide bandgap semiconductors, the Se phases showing lower values than the sulfide analogs.

AB - A new class of mesostructured semiconducting materials, M-Ge-Q (Q = S,Se) were synthesized and characterized. The materials possess an amorphous, three-dimensional framework structure in which simple adamante clusters are the basic building blocks. The application of formamide led to a hexagonally ordered pore structure and a different stoichiometry, whereas, H2O/alcohol mixtures favored disordered pore structure with worm-hole character. All compounds are wide bandgap semiconductors, the Se phases showing lower values than the sulfide analogs.

UR - http://www.scopus.com/inward/record.url?scp=0033639756&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033639756&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033639756

VL - 12

SP - 85

EP - 91

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 2

ER -