Metal-organic chemical vapor deposition of epitaxial Tl2Ba2Ca2Cu3O10-X thin films

Bruce J. Hinds, Jon L. Schindler, Bin Han, Deborah A. Neumayer, Donald Degroot, Tobin J Marks, Carl R. Kannewurf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Superconducting thin films of Tl2Ba2Ca2Cu3O10-X (TL-2223) have been grown on single crystal (110) LaAlO3 using a two-step process. Ba2Ca2Cu3OX precursor films are deposited via metal-organic chemical vapor deposition (MOCVD) in a horizontal hot walled reactor. The second generation precursors Ba(hfa)2·tet, Ca(hfa)2·tet, and Ca(hfa)2 (hfa = hexafluoroacetylacetonate, tet = tetraglyme) were used as volatile metal sources due to their superior volatility and stability. Tl was introduced into the film via a high temperature post anneal in the presence of a Tl2O3:BaO:CaO:CuO pellet (1:2:2:3 ratio). Low O2 partial pressures were used to reduce the temperature in which the Tl-2223 phase forms and to improve the surface morphology associated with a liquid phase intermediate. Films are highly oriented with the c-axis perpendicular to the substrate and a-b axis epitaxy is seen from x-ray Φ-scans. The best films have a resistively measured Tc of 115K and a magnetically derived Jc of 6×105 A/cm2 (77K, 0 T). Preliminary surface resistance measurements, using parallel plate techniques, give Rs = 0.35 mΩ at 5K (ω=10 GHz).

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsSeshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)1558992340
Publication statusPublished - 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993


OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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