Abstract
The metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5×1020 cm-3, mobility μ = 14.3 cm2/V·s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1×1019 cm-3, μ = 55.2 cm2/V·s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 °C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-In-O series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2 (4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V·s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.
Original language | English |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Pages | 345-352 |
Number of pages | 8 |
Volume | 607 |
Publication status | Published - 2000 |
Event | The 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III' - Boston, MA, USA Duration: Nov 29 1999 → Dec 2 1999 |
Other
Other | The 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III' |
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City | Boston, MA, USA |
Period | 11/29/99 → 12/2/99 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials