Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films

A. Wang, N. L. Edleman, J. R. Babcock, Tobin J Marks, M. A. Lane, P. W. Brazis, C. R. Kannewurf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

The metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5×1020 cm-3, mobility μ = 14.3 cm2/V·s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1×1019 cm-3, μ = 55.2 cm2/V·s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 °C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-In-O series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2 (4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V·s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages345-352
Number of pages8
Volume607
Publication statusPublished - 2000
EventThe 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III' - Boston, MA, USA
Duration: Nov 29 1999Dec 2 1999

Other

OtherThe 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III'
CityBoston, MA, USA
Period11/29/9912/2/99

Fingerprint

Organic Chemicals
Organic chemicals
Oxide films
Chemical vapor deposition
Metals
Thin films
Carrier concentration
Carrier mobility
Doping (additives)
X ray analysis
Gas mixtures
Transparency
Diffraction
Crystal structure
Annealing
Transmission electron microscopy
X ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Wang, A., Edleman, N. L., Babcock, J. R., Marks, T. J., Lane, M. A., Brazis, P. W., & Kannewurf, C. R. (2000). Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films. In Materials Research Society Symposium - Proceedings (Vol. 607, pp. 345-352). Materials Research Society.

Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films. / Wang, A.; Edleman, N. L.; Babcock, J. R.; Marks, Tobin J; Lane, M. A.; Brazis, P. W.; Kannewurf, C. R.

Materials Research Society Symposium - Proceedings. Vol. 607 Materials Research Society, 2000. p. 345-352.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, A, Edleman, NL, Babcock, JR, Marks, TJ, Lane, MA, Brazis, PW & Kannewurf, CR 2000, Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films. in Materials Research Society Symposium - Proceedings. vol. 607, Materials Research Society, pp. 345-352, The 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III', Boston, MA, USA, 11/29/99.
Wang A, Edleman NL, Babcock JR, Marks TJ, Lane MA, Brazis PW et al. Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films. In Materials Research Society Symposium - Proceedings. Vol. 607. Materials Research Society. 2000. p. 345-352
Wang, A. ; Edleman, N. L. ; Babcock, J. R. ; Marks, Tobin J ; Lane, M. A. ; Brazis, P. W. ; Kannewurf, C. R. / Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films. Materials Research Society Symposium - Proceedings. Vol. 607 Materials Research Society, 2000. pp. 345-352
@inproceedings{bed158c4a2b54aa796bc5e6036db3b38,
title = "Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films",
abstract = "The metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5×1020 cm-3, mobility μ = 14.3 cm2/V·s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1×1019 cm-3, μ = 55.2 cm2/V·s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 °C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-In-O series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2 (4{\%}) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V·s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.",
author = "A. Wang and Edleman, {N. L.} and Babcock, {J. R.} and Marks, {Tobin J} and Lane, {M. A.} and Brazis, {P. W.} and Kannewurf, {C. R.}",
year = "2000",
language = "English",
volume = "607",
pages = "345--352",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films

AU - Wang, A.

AU - Edleman, N. L.

AU - Babcock, J. R.

AU - Marks, Tobin J

AU - Lane, M. A.

AU - Brazis, P. W.

AU - Kannewurf, C. R.

PY - 2000

Y1 - 2000

N2 - The metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5×1020 cm-3, mobility μ = 14.3 cm2/V·s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1×1019 cm-3, μ = 55.2 cm2/V·s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 °C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-In-O series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2 (4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V·s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.

AB - The metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5×1020 cm-3, mobility μ = 14.3 cm2/V·s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1×1019 cm-3, μ = 55.2 cm2/V·s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 °C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-In-O series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2 (4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V·s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.

UR - http://www.scopus.com/inward/record.url?scp=0033700105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033700105&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033700105

VL - 607

SP - 345

EP - 352

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -