Abstract
The metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5×1020 cm-3, mobility μ = 14.3 cm2/V·s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1×1019 cm-3, μ = 55.2 cm2/V·s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 °C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-In-O series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2 (4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V·s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 345-352 |
| Number of pages | 8 |
| Volume | 607 |
| Publication status | Published - 2000 |
| Event | The 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III' - Boston, MA, USA Duration: Nov 29 1999 → Dec 2 1999 |
Other
| Other | The 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III' |
|---|---|
| City | Boston, MA, USA |
| Period | 11/29/99 → 12/2/99 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films. / Wang, A.; Edleman, N. L.; Babcock, J. R.; Marks, Tobin J; Lane, M. A.; Brazis, P. W.; Kannewurf, C. R.
Materials Research Society Symposium - Proceedings. Vol. 607 Materials Research Society, 2000. p. 345-352.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films
AU - Wang, A.
AU - Edleman, N. L.
AU - Babcock, J. R.
AU - Marks, Tobin J
AU - Lane, M. A.
AU - Brazis, P. W.
AU - Kannewurf, C. R.
PY - 2000
Y1 - 2000
N2 - The metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5×1020 cm-3, mobility μ = 14.3 cm2/V·s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1×1019 cm-3, μ = 55.2 cm2/V·s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 °C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-In-O series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2 (4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V·s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.
AB - The metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5×1020 cm-3, mobility μ = 14.3 cm2/V·s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1×1019 cm-3, μ = 55.2 cm2/V·s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 °C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-In-O series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2 (4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V·s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.
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M3 - Conference contribution
AN - SCOPUS:0033700105
VL - 607
SP - 345
EP - 352
BT - Materials Research Society Symposium - Proceedings
PB - Materials Research Society
ER -