Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films

A. Wang, N. L. Edleman, J. R. Babcock, Tobin J Marks, M. A. Lane, P. W. Brazis, C. R. Kannewurf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

The metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5×1020 cm-3, mobility μ = 14.3 cm2/V·s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1×1019 cm-3, μ = 55.2 cm2/V·s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 °C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-In-O series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2 (4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V·s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages345-352
Number of pages8
Volume607
Publication statusPublished - 2000
EventThe 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III' - Boston, MA, USA
Duration: Nov 29 1999Dec 2 1999

Other

OtherThe 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III'
CityBoston, MA, USA
Period11/29/9912/2/99

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Wang, A., Edleman, N. L., Babcock, J. R., Marks, T. J., Lane, M. A., Brazis, P. W., & Kannewurf, C. R. (2000). Metal-organic chemical vapor deposition of Zn-In-Sn-O and Ga-In-Sn-O transparent conducting oxide thin films. In Materials Research Society Symposium - Proceedings (Vol. 607, pp. 345-352). Materials Research Society.