Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

A. Wang, S. C. Cheng, J. A. Belot, R. J. McNeely, J. Cheng, B. Marcordes, Tobin J Marks, J. Y. Dai, Robert P. H. Chang, J. L. Schindler, M. P. Chudzik, C. R. Kannewurf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3 and ZnkIn2Ok+3 films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2 (dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020 cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020 cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages3-10
Number of pages8
Volume495
Publication statusPublished - 1998
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA
Period11/30/9712/4/97

Fingerprint

Organic Chemicals
Organic chemicals
Oxides
Chemical vapor deposition
Metals
Transparency
Carrier concentration
Microstructure
Chemical analysis
Electric Conductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Wang, A., Cheng, S. C., Belot, J. A., McNeely, R. J., Cheng, J., Marcordes, B., ... Kannewurf, C. R. (1998). Metal-organic chemical vapor deposition routes to films of transparent conducting oxides. In Materials Research Society Symposium - Proceedings (Vol. 495, pp. 3-10). MRS.

Metal-organic chemical vapor deposition routes to films of transparent conducting oxides. / Wang, A.; Cheng, S. C.; Belot, J. A.; McNeely, R. J.; Cheng, J.; Marcordes, B.; Marks, Tobin J; Dai, J. Y.; Chang, Robert P. H.; Schindler, J. L.; Chudzik, M. P.; Kannewurf, C. R.

Materials Research Society Symposium - Proceedings. Vol. 495 MRS, 1998. p. 3-10.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, A, Cheng, SC, Belot, JA, McNeely, RJ, Cheng, J, Marcordes, B, Marks, TJ, Dai, JY, Chang, RPH, Schindler, JL, Chudzik, MP & Kannewurf, CR 1998, Metal-organic chemical vapor deposition routes to films of transparent conducting oxides. in Materials Research Society Symposium - Proceedings. vol. 495, MRS, pp. 3-10, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 11/30/97.
Wang A, Cheng SC, Belot JA, McNeely RJ, Cheng J, Marcordes B et al. Metal-organic chemical vapor deposition routes to films of transparent conducting oxides. In Materials Research Society Symposium - Proceedings. Vol. 495. MRS. 1998. p. 3-10
Wang, A. ; Cheng, S. C. ; Belot, J. A. ; McNeely, R. J. ; Cheng, J. ; Marcordes, B. ; Marks, Tobin J ; Dai, J. Y. ; Chang, Robert P. H. ; Schindler, J. L. ; Chudzik, M. P. ; Kannewurf, C. R. / Metal-organic chemical vapor deposition routes to films of transparent conducting oxides. Materials Research Society Symposium - Proceedings. Vol. 495 MRS, 1998. pp. 3-10
@inproceedings{a02ea5a4b9194368b3731a942a4399f3,
title = "Metal-organic chemical vapor deposition routes to films of transparent conducting oxides",
abstract = "This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3 and ZnkIn2Ok+3 films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2 (dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020 cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020 cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.",
author = "A. Wang and Cheng, {S. C.} and Belot, {J. A.} and McNeely, {R. J.} and J. Cheng and B. Marcordes and Marks, {Tobin J} and Dai, {J. Y.} and Chang, {Robert P. H.} and Schindler, {J. L.} and Chudzik, {M. P.} and Kannewurf, {C. R.}",
year = "1998",
language = "English",
volume = "495",
pages = "3--10",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "MRS",

}

TY - GEN

T1 - Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

AU - Wang, A.

AU - Cheng, S. C.

AU - Belot, J. A.

AU - McNeely, R. J.

AU - Cheng, J.

AU - Marcordes, B.

AU - Marks, Tobin J

AU - Dai, J. Y.

AU - Chang, Robert P. H.

AU - Schindler, J. L.

AU - Chudzik, M. P.

AU - Kannewurf, C. R.

PY - 1998

Y1 - 1998

N2 - This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3 and ZnkIn2Ok+3 films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2 (dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020 cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020 cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

AB - This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3 and ZnkIn2Ok+3 films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2 (dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020 cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020 cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

UR - http://www.scopus.com/inward/record.url?scp=0031631621&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031631621&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031631621

VL - 495

SP - 3

EP - 10

BT - Materials Research Society Symposium - Proceedings

PB - MRS

ER -