Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl2Ba2Ca2Cu3O 10 thin films

B. J. Hinds, D. L. Schulz, D. A. Neumayer, B. Han, Tobin J Marks, Y. Y. Wang, V. P. Dravid, J. L. Schindler, T. P. Hogan, C. R. Kannewurf

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Abstract

Phase-pure epitaxial Tl2Ba2Ca2Cu 3O10 thin films have been grown on single crystal (110) LaAlO3 substrates using an improved metal-organic chemical vapor deposition process. First, Ba-Ca-Cu-Ox precursor films are grown on LaAlO3 (110) substrates using Ba(hfa)2tet, Ca(hfa) 2tet, and Cu(hfa)2 (hfa=hexafluoroacetylacetonate; tet=tetraglyme) as volatile metalorganic precursors. Thallium is then incorporated into the films during a post-anneal in the presence of a Tl 2O3, BaO, CaO, CuO powder mixture at 820°C for 12 h in a flowing 10% O2/Ar atmosphere. The films have a transport-measured Tc=115 K and Jc=1.5×105 A/cm2 (80 K), while magnetic hysteresis measurements yield Jc= 6×105 A/cm2 (77 K). Preliminary surface resistance measurements give Rs=0.35 mΩ at 5 K, 10 GHz.

Original languageEnglish
Pages (from-to)231-233
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number2
DOIs
Publication statusPublished - 1994

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hinds, B. J., Schulz, D. L., Neumayer, D. A., Han, B., Marks, T. J., Wang, Y. Y., Dravid, V. P., Schindler, J. L., Hogan, T. P., & Kannewurf, C. R. (1994). Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl2Ba2Ca2Cu3O 10 thin films. Applied Physics Letters, 65(2), 231-233. https://doi.org/10.1063/1.112638