Mg doping and alloying in Zn3P2 heterojunction solar cells

Gregory M. Kimball, Nathan S Lewis, Harry A. Atwater

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

Zinc phosphide (Zn3P2) is a promising and earth-abundant alternative to traditional materials (e.g. CdTe, CIGS, a-Si) for thin film photovoltaics. We report the fabrication of Mg/Zn3P 2 Schottky diodes with VOC values reaching 550 mV, J SC values up to 21.8 mA/cm2, and photovoltaic efficiency reaching 4.5%. Previous authors have suggested that Mg impurities behave as n-type dopants in Zn3P2, but combined Hall effect measurements and Secondary Ion Mass Spectrometry (SIMS) show that 10 17 to 1019 cm-3 Mg impurities compensate p-type doping to form highly resistive Zn3P2. Further device work with modified ITO/Mg/Zn3P2 heterojunctions suggests that the ITO capping layer improves a passivation reaction between Mg and Zn3P2 to yield high voltages > 500 mV without degradation in the blue response of the solar cell. These results indicate that at least 8-10% efficiency cell is realizable by the optimization of Mg treatment in Zn3P2 solar cells.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages1039-1043
Number of pages5
DOIs
Publication statusPublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

Fingerprint

Alloying
Heterojunctions
Solar cells
Doping (additives)
Impurities
Hall effect
Secondary ion mass spectrometry
Volatile organic compounds
Passivation
Diodes
Zinc
Earth (planet)
Fabrication
Degradation
Thin films
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Kimball, G. M., Lewis, N. S., & Atwater, H. A. (2010). Mg doping and alloying in Zn3P2 heterojunction solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1039-1043). [5614641] https://doi.org/10.1109/PVSC.2010.5614641

Mg doping and alloying in Zn3P2 heterojunction solar cells. / Kimball, Gregory M.; Lewis, Nathan S; Atwater, Harry A.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 1039-1043 5614641.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kimball, GM, Lewis, NS & Atwater, HA 2010, Mg doping and alloying in Zn3P2 heterojunction solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference., 5614641, pp. 1039-1043, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5614641
Kimball GM, Lewis NS, Atwater HA. Mg doping and alloying in Zn3P2 heterojunction solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 1039-1043. 5614641 https://doi.org/10.1109/PVSC.2010.5614641
Kimball, Gregory M. ; Lewis, Nathan S ; Atwater, Harry A. / Mg doping and alloying in Zn3P2 heterojunction solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. pp. 1039-1043
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