Mg doping and alloying in Zn3P2 heterojunction solar cells

Gregory M. Kimball; Nathan S. Lewis; Harry A. Atwater

doi:10.1109/PVSC.2010.5614641

Mg doping and alloying in Zn₃P₂ heterojunction solar cells

Gregory M. Kimball, Nathan S. Lewis, Harry A. Atwater

California Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

20 Citations (Scopus)

Abstract

Zinc phosphide (Zn₃P₂) is a promising and earth-abundant alternative to traditional materials (e.g. CdTe, CIGS, a-Si) for thin film photovoltaics. We report the fabrication of Mg/Zn₃P ₂ Schottky diodes with V_OC values reaching 550 mV, J _SC values up to 21.8 mA/cm², and photovoltaic efficiency reaching 4.5%. Previous authors have suggested that Mg impurities behave as n-type dopants in Zn₃P₂, but combined Hall effect measurements and Secondary Ion Mass Spectrometry (SIMS) show that 10 ¹⁷ to 10¹⁹ cm^-3 Mg impurities compensate p-type doping to form highly resistive Zn₃P₂. Further device work with modified ITO/Mg/Zn₃P₂ heterojunctions suggests that the ITO capping layer improves a passivation reaction between Mg and Zn₃P₂ to yield high voltages > 500 mV without degradation in the blue response of the solar cell. These results indicate that at least 8-10% efficiency cell is realizable by the optimization of Mg treatment in Zn₃P₂ solar cells.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	1039-1043
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2010.5614641
Publication status	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: Jun 20 2010 → Jun 25 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country	United States
City	Honolulu, HI
Period	6/20/10 → 6/25/10

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2010.5614641

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Mg doping and alloying in Zn₃P₂ heterojunction solar cells. / Kimball, Gregory M.; Lewis, Nathan S.; Atwater, Harry A.

Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 1039-1043 5614641 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kimball, GM, Lewis, NS & Atwater, HA 2010, Mg doping and alloying in Zn₃P₂ heterojunction solar cells. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614641, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1039-1043, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5614641

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abstract = "Zinc phosphide (Zn3P2) is a promising and earth-abundant alternative to traditional materials (e.g. CdTe, CIGS, a-Si) for thin film photovoltaics. We report the fabrication of Mg/Zn3P 2 Schottky diodes with VOC values reaching 550 mV, J SC values up to 21.8 mA/cm2, and photovoltaic efficiency reaching 4.5%. Previous authors have suggested that Mg impurities behave as n-type dopants in Zn3P2, but combined Hall effect measurements and Secondary Ion Mass Spectrometry (SIMS) show that 10 17 to 1019 cm-3 Mg impurities compensate p-type doping to form highly resistive Zn3P2. Further device work with modified ITO/Mg/Zn3P2 heterojunctions suggests that the ITO capping layer improves a passivation reaction between Mg and Zn3P2 to yield high voltages > 500 mV without degradation in the blue response of the solar cell. These results indicate that at least 8-10% efficiency cell is realizable by the optimization of Mg treatment in Zn3P2 solar cells.",

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AB - Zinc phosphide (Zn3P2) is a promising and earth-abundant alternative to traditional materials (e.g. CdTe, CIGS, a-Si) for thin film photovoltaics. We report the fabrication of Mg/Zn3P 2 Schottky diodes with VOC values reaching 550 mV, J SC values up to 21.8 mA/cm2, and photovoltaic efficiency reaching 4.5%. Previous authors have suggested that Mg impurities behave as n-type dopants in Zn3P2, but combined Hall effect measurements and Secondary Ion Mass Spectrometry (SIMS) show that 10 17 to 1019 cm-3 Mg impurities compensate p-type doping to form highly resistive Zn3P2. Further device work with modified ITO/Mg/Zn3P2 heterojunctions suggests that the ITO capping layer improves a passivation reaction between Mg and Zn3P2 to yield high voltages > 500 mV without degradation in the blue response of the solar cell. These results indicate that at least 8-10% efficiency cell is realizable by the optimization of Mg treatment in Zn3P2 solar cells.

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