TY - GEN
T1 - Mg doping and alloying in Zn3P2 heterojunction solar cells
AU - Kimball, Gregory M.
AU - Lewis, Nathan S.
AU - Atwater, Harry A.
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - Zinc phosphide (Zn3P2) is a promising and earth-abundant alternative to traditional materials (e.g. CdTe, CIGS, a-Si) for thin film photovoltaics. We report the fabrication of Mg/Zn3P 2 Schottky diodes with VOC values reaching 550 mV, J SC values up to 21.8 mA/cm2, and photovoltaic efficiency reaching 4.5%. Previous authors have suggested that Mg impurities behave as n-type dopants in Zn3P2, but combined Hall effect measurements and Secondary Ion Mass Spectrometry (SIMS) show that 10 17 to 1019 cm-3 Mg impurities compensate p-type doping to form highly resistive Zn3P2. Further device work with modified ITO/Mg/Zn3P2 heterojunctions suggests that the ITO capping layer improves a passivation reaction between Mg and Zn3P2 to yield high voltages > 500 mV without degradation in the blue response of the solar cell. These results indicate that at least 8-10% efficiency cell is realizable by the optimization of Mg treatment in Zn3P2 solar cells.
AB - Zinc phosphide (Zn3P2) is a promising and earth-abundant alternative to traditional materials (e.g. CdTe, CIGS, a-Si) for thin film photovoltaics. We report the fabrication of Mg/Zn3P 2 Schottky diodes with VOC values reaching 550 mV, J SC values up to 21.8 mA/cm2, and photovoltaic efficiency reaching 4.5%. Previous authors have suggested that Mg impurities behave as n-type dopants in Zn3P2, but combined Hall effect measurements and Secondary Ion Mass Spectrometry (SIMS) show that 10 17 to 1019 cm-3 Mg impurities compensate p-type doping to form highly resistive Zn3P2. Further device work with modified ITO/Mg/Zn3P2 heterojunctions suggests that the ITO capping layer improves a passivation reaction between Mg and Zn3P2 to yield high voltages > 500 mV without degradation in the blue response of the solar cell. These results indicate that at least 8-10% efficiency cell is realizable by the optimization of Mg treatment in Zn3P2 solar cells.
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U2 - 10.1109/PVSC.2010.5614641
DO - 10.1109/PVSC.2010.5614641
M3 - Conference contribution
AN - SCOPUS:78650145776
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1039
EP - 1043
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -