MgB2 Josephson junctions produced by focused helium ion beam irradiation

L. Kasaei, T. Melbourne, V. Manichev, Leonard C Feldman, T. Gustafsson, Ke Chen, X. X. Xi, B. A. Davidson

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Planar magnesium diboride Josephson junctions are fabricated using focused helium ion beam irradiation. A single track of ion irradiation with a 30 kV He+ beam with nominal beam diameter < 0.5 nm is used to create a normal-metal barrier on a MgB2 film deposited by hybrid physical-chemical vapor deposition. Josephson coupling is observed below the critical temperature of the electrodes for a He+ doses between 8x1015/cm2 to 4x1016/cm2. Analysis of the temperature dependence of the normal resistance and critical voltage of the junctions shows highly uniform barriers with nearly ideal resistively-shunted junction behavior for higher-dose junctions, while nonequilibrium effects dominate the properties of lower-dose junctions over most of the temperature range. These results demonstrate that focused helium ion beam irradiation can produce high-quality proximity-coupled MgB2 Josephson junctions with tailorable properties, promising for use in superconducting devices and circuits.

Original languageEnglish
Article number075020
JournalAIP Advances
Volume8
Issue number7
DOIs
Publication statusPublished - Jul 1 2018

Fingerprint

helium ions
Josephson junctions
ion beams
irradiation
dosage
superconducting devices
ion irradiation
magnesium
proximity
critical temperature
vapor deposition
temperature dependence
electrodes
electric potential
metals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kasaei, L., Melbourne, T., Manichev, V., Feldman, L. C., Gustafsson, T., Chen, K., ... Davidson, B. A. (2018). MgB2 Josephson junctions produced by focused helium ion beam irradiation. AIP Advances, 8(7), [075020]. https://doi.org/10.1063/1.5030751

MgB2 Josephson junctions produced by focused helium ion beam irradiation. / Kasaei, L.; Melbourne, T.; Manichev, V.; Feldman, Leonard C; Gustafsson, T.; Chen, Ke; Xi, X. X.; Davidson, B. A.

In: AIP Advances, Vol. 8, No. 7, 075020, 01.07.2018.

Research output: Contribution to journalArticle

Kasaei, L, Melbourne, T, Manichev, V, Feldman, LC, Gustafsson, T, Chen, K, Xi, XX & Davidson, BA 2018, 'MgB2 Josephson junctions produced by focused helium ion beam irradiation', AIP Advances, vol. 8, no. 7, 075020. https://doi.org/10.1063/1.5030751
Kasaei L, Melbourne T, Manichev V, Feldman LC, Gustafsson T, Chen K et al. MgB2 Josephson junctions produced by focused helium ion beam irradiation. AIP Advances. 2018 Jul 1;8(7). 075020. https://doi.org/10.1063/1.5030751
Kasaei, L. ; Melbourne, T. ; Manichev, V. ; Feldman, Leonard C ; Gustafsson, T. ; Chen, Ke ; Xi, X. X. ; Davidson, B. A. / MgB2 Josephson junctions produced by focused helium ion beam irradiation. In: AIP Advances. 2018 ; Vol. 8, No. 7.
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