TY - JOUR
T1 - Micro-Scale Device—An Alternative Route for Studying the Intrinsic Properties of Solid-State Materials
T2 - The Case of Semiconducting TaGeIr
AU - Antonyshyn, I.
AU - Wagner, F. R.
AU - Bobnar, M.
AU - Sichevych, O.
AU - Burkhardt, U.
AU - Schmidt, M.
AU - König, M.
AU - Poeppelmeier, K.
AU - Mackenzie, A. P.
AU - Svanidze, E.
AU - Grin, Yu
N1 - Funding Information:
We thank Sylvia Kostmann, Petra Scheppan and Monika Eckert for SEM experiments, Yurii Prots, Horst Borrmann and Stefan H?ckmann for the help with single-crystal and powder X-ray diffraction. We are grateful to Zachary Fisk, Philip J. W. Moll, and Maja D. Bachmann for stimulating discussions. K.R.P. at Northwestern University was supported by the NSF-DMR EPM program under grant DMR-1806912.
PY - 2020/6/26
Y1 - 2020/6/26
N2 - An efficient application of a material is only possible if we know its physical and chemical properties, which is frequently obstructed by the presence of micro- or macroscopic inclusions of secondary phases. While sometimes a sophisticated synthesis route can address this issue, often obtaining pure material is not possible. One example is TaGeIr, which has highly sample-dependent properties resulting from the presence of several impurity phases, which influence electronic transport in the material. The effect of these minority phases was avoided by manufacturing, with the help of focused-ion-beam, a μm-scale device containing only one phase—TaGeIr. This work provides evidence for intrinsic semiconducting behavior of TaGeIr and serves as an example of selective single-domain device manufacturing. This approach gives a unique access to the properties of compounds that cannot be synthesized in single-phase form, sparing costly and time-consuming synthesis efforts.
AB - An efficient application of a material is only possible if we know its physical and chemical properties, which is frequently obstructed by the presence of micro- or macroscopic inclusions of secondary phases. While sometimes a sophisticated synthesis route can address this issue, often obtaining pure material is not possible. One example is TaGeIr, which has highly sample-dependent properties resulting from the presence of several impurity phases, which influence electronic transport in the material. The effect of these minority phases was avoided by manufacturing, with the help of focused-ion-beam, a μm-scale device containing only one phase—TaGeIr. This work provides evidence for intrinsic semiconducting behavior of TaGeIr and serves as an example of selective single-domain device manufacturing. This approach gives a unique access to the properties of compounds that cannot be synthesized in single-phase form, sparing costly and time-consuming synthesis efforts.
KW - crystal structures
KW - electronic structure
KW - semiconductors
KW - solid-state structures
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U2 - 10.1002/anie.202002693
DO - 10.1002/anie.202002693
M3 - Article
C2 - 32202036
AN - SCOPUS:85083991211
VL - 59
SP - 11136
EP - 11141
JO - Angewandte Chemie - International Edition
JF - Angewandte Chemie - International Edition
SN - 1433-7851
IS - 27
ER -