Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport

Antonio Facchetti, Choongik Kim, Tobin J Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Organic semiconductor-dielectric interfacial characteristics play a critical role in influencing organic thin-film transistor (OTFT) performance characteristics. In this study, we report new insights into how the bulk/surface physicochemical characteristics of the gate insulator modulate the thin-film growth mode, microstructure, and OTFT performance parameters of pentacene films deposited on bilayer polymer (top)-SiO2 (bottom) gate insulators. The results demonstrate that the pentacene growth mode varies substantially with the dielectric/substrate, and correlations are established between pentacene film growth mode, the thin-film to bulk microstructural phase transition, and OTFT device performance. Furthermore, we demonstrate here for the first time the key influence of the polymeric insulator layer microstructural mobility on pentacene film growth mode and OTFT response.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6658
DOIs
Publication statusPublished - 2007
EventOrganic Field-Effect Transistors VI - San Diego, CA, United States
Duration: Aug 26 2007Aug 28 2007

Other

OtherOrganic Field-Effect Transistors VI
CountryUnited States
CitySan Diego, CA
Period8/26/078/28/07

Fingerprint

Thin film transistors
Charge transfer
Film growth
insulators
transistors
thin films
Thin films
Semiconducting organic compounds
Phase transitions
organic semiconductors
Microstructure
Polymers
Substrates
microstructure
polymers

Keywords

  • Film growth mode
  • Interface
  • OTFT
  • Pentacene
  • Polymer dielectric
  • Tg

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Facchetti, A., Kim, C., & Marks, T. J. (2007). Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6658). [66580P] https://doi.org/10.1117/12.732885

Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport. / Facchetti, Antonio; Kim, Choongik; Marks, Tobin J.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6658 2007. 66580P.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Facchetti, A, Kim, C & Marks, TJ 2007, Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6658, 66580P, Organic Field-Effect Transistors VI, San Diego, CA, United States, 8/26/07. https://doi.org/10.1117/12.732885
Facchetti A, Kim C, Marks TJ. Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6658. 2007. 66580P https://doi.org/10.1117/12.732885
Facchetti, Antonio ; Kim, Choongik ; Marks, Tobin J. / Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6658 2007.
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