Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport

Antonio Facchetti, Choongik Kim, Tobin J. Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Organic semiconductor-dielectric interfacial characteristics play a critical role in influencing organic thin-film transistor (OTFT) performance characteristics. In this study, we report new insights into how the bulk/surface physicochemical characteristics of the gate insulator modulate the thin-film growth mode, microstructure, and OTFT performance parameters of pentacene films deposited on bilayer polymer (top)-SiO2 (bottom) gate insulators. The results demonstrate that the pentacene growth mode varies substantially with the dielectric/substrate, and correlations are established between pentacene film growth mode, the thin-film to bulk microstructural phase transition, and OTFT device performance. Furthermore, we demonstrate here for the first time the key influence of the polymeric insulator layer microstructural mobility on pentacene film growth mode and OTFT response.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors VI
Publication statusPublished - Dec 1 2007
EventOrganic Field-Effect Transistors VI - San Diego, CA, United States
Duration: Aug 26 2007Aug 28 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOrganic Field-Effect Transistors VI
CountryUnited States
CitySan Diego, CA


  • Film growth mode
  • Interface
  • OTFT
  • Pentacene
  • Polymer dielectric
  • Tg

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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