In this paper, we present data on the formation and structure of CVD W films deposited by the Si reduction of WF//6. We have found that Si reduced W films deposited between 210 degree C and 700 degree C are porous and discontinuous, and are probably not effective barriers to the further diffusion of WF//6. An unusual temperature dependence of W film growth is reported. The temperature dependence and the self-limiting behavior of film growth (regardless of the ultimate film thickness at which the film self-limits), are believed to be controlled by some surface-catalyzed reaction. Thus, the temperature dependence of the sticking coefficient of a reactive intermediate probably controls the reaction. This kind of model has the potential to explain why minor changes in the Si surface due to cleaning variations, for example, can result in radically different W film growth behavior.
|Title of host publication||Unknown Host Publication Title|
|Editors||Eliot K. Broadbent|
|Publisher||Materials Research Soc|
|Number of pages||8|
|Publication status||Published - 1987|
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