Microwave Near-Field Imaging of Two-Dimensional Semiconductors

Samuel Berweger, Joel C. Weber, Jimmy John, Jesus M. Velazquez, Adam Pieterick, Norman A. Sanford, Albert V. Davydov, Bruce Brunschwig, Nathan S Lewis, Thomas M. Wallis, Pavel Kabos

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Optimizing new generations of two-dimensional devices based on van der Waals materials will require techniques capable of measuring variations in electronic properties in situ and with nanometer spatial resolution. We perform scanning microwave microscopy (SMM) imaging of single layers of MoS2 and n- and p-doped WSe2. By controlling the sample charge carrier concentration through the applied tip bias, we are able to reversibly control and optimize the SMM contrast to image variations in electronic structure and the localized effects of surface contaminants. By further performing tip bias-dependent point spectroscopy together with finite element simulations, we distinguish the effects of the quantum capacitance and determine the local dominant charge carrier species and dopant concentration. These results underscore the capability of SMM for the study of 2D materials to image, identify, and study electronic defects.

Original languageEnglish
Pages (from-to)1122-1127
Number of pages6
JournalNano Letters
Volume15
Issue number2
DOIs
Publication statusPublished - Feb 11 2015

Fingerprint

near fields
Microscopic examination
Microwaves
Semiconductor materials
microscopy
Charge carriers
Scanning
Imaging techniques
microwaves
scanning
charge carriers
electronics
Electronic properties
Electronic structure
Carrier concentration
contaminants
Capacitance
spatial resolution
capacitance
Doping (additives)

Keywords

  • atomic force microscope
  • microwave
  • MoS
  • near-field
  • quantum capacitance
  • Transition metal dichalcogenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Berweger, S., Weber, J. C., John, J., Velazquez, J. M., Pieterick, A., Sanford, N. A., ... Kabos, P. (2015). Microwave Near-Field Imaging of Two-Dimensional Semiconductors. Nano Letters, 15(2), 1122-1127. https://doi.org/10.1021/nl504960u

Microwave Near-Field Imaging of Two-Dimensional Semiconductors. / Berweger, Samuel; Weber, Joel C.; John, Jimmy; Velazquez, Jesus M.; Pieterick, Adam; Sanford, Norman A.; Davydov, Albert V.; Brunschwig, Bruce; Lewis, Nathan S; Wallis, Thomas M.; Kabos, Pavel.

In: Nano Letters, Vol. 15, No. 2, 11.02.2015, p. 1122-1127.

Research output: Contribution to journalArticle

Berweger, S, Weber, JC, John, J, Velazquez, JM, Pieterick, A, Sanford, NA, Davydov, AV, Brunschwig, B, Lewis, NS, Wallis, TM & Kabos, P 2015, 'Microwave Near-Field Imaging of Two-Dimensional Semiconductors', Nano Letters, vol. 15, no. 2, pp. 1122-1127. https://doi.org/10.1021/nl504960u
Berweger S, Weber JC, John J, Velazquez JM, Pieterick A, Sanford NA et al. Microwave Near-Field Imaging of Two-Dimensional Semiconductors. Nano Letters. 2015 Feb 11;15(2):1122-1127. https://doi.org/10.1021/nl504960u
Berweger, Samuel ; Weber, Joel C. ; John, Jimmy ; Velazquez, Jesus M. ; Pieterick, Adam ; Sanford, Norman A. ; Davydov, Albert V. ; Brunschwig, Bruce ; Lewis, Nathan S ; Wallis, Thomas M. ; Kabos, Pavel. / Microwave Near-Field Imaging of Two-Dimensional Semiconductors. In: Nano Letters. 2015 ; Vol. 15, No. 2. pp. 1122-1127.
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