The growth of Cd2SnO4 by MOCVD process using a cold-wall reactor was analyzed. Carrier gas flow rates of 40-80 sccm of ultra-high purity Ar were passed through the thermostatted precursor reservoirs and the precursor stream was mixed with ultra-high purity O2. It was observed that the films were highly crystalline as-deposited and there was a need for high temperature post-deposition annealing leading to the complication of large-scale device fabrication and prohibiting some substrates. It was also observed that the removal of the trace amounts of the secondary CdO phase and optimization would enhance charge mobility.
ASJC Scopus subject areas
- Surfaces and Interfaces
- Process Chemistry and Technology