MOCVD growth of transparent conducting Cd2SnO4 thin films

Andrew W. Metz, Melissa A. Lane, Carl R. Kannewurf, Kenneth R Poeppelmeier, Tobin J Marks

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The growth of Cd2SnO4 by MOCVD process using a cold-wall reactor was analyzed. Carrier gas flow rates of 40-80 sccm of ultra-high purity Ar were passed through the thermostatted precursor reservoirs and the precursor stream was mixed with ultra-high purity O2. It was observed that the films were highly crystalline as-deposited and there was a need for high temperature post-deposition annealing leading to the complication of large-scale device fabrication and prohibiting some substrates. It was also observed that the removal of the trace amounts of the secondary CdO phase and optimization would enhance charge mobility.

Original languageEnglish
Pages (from-to)297-300
Number of pages4
JournalChemical Vapor Deposition
Volume10
Issue number6
DOIs
Publication statusPublished - Dec 2004

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Flow of gases
purity
Flow rate
Annealing
Crystalline materials
cold walls
conduction
Fabrication
Thin films
Substrates
thin films
gas flow
flow velocity
reactors
Temperature
fabrication
optimization
annealing

ASJC Scopus subject areas

  • Electrochemistry
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

MOCVD growth of transparent conducting Cd2SnO4 thin films. / Metz, Andrew W.; Lane, Melissa A.; Kannewurf, Carl R.; Poeppelmeier, Kenneth R; Marks, Tobin J.

In: Chemical Vapor Deposition, Vol. 10, No. 6, 12.2004, p. 297-300.

Research output: Contribution to journalArticle

Metz, Andrew W. ; Lane, Melissa A. ; Kannewurf, Carl R. ; Poeppelmeier, Kenneth R ; Marks, Tobin J. / MOCVD growth of transparent conducting Cd2SnO4 thin films. In: Chemical Vapor Deposition. 2004 ; Vol. 10, No. 6. pp. 297-300.
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