MOCVD of epitaxial BaTiO3 films using a liquid barium precursor

A. R. Teren, J. A. Belot, N. L. Edleman, Tobin J Marks, B. W. Wessels

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Abstract

The deposition of high quality BaTiO3 films using metal-organic chemical vapor deposition (MOCVD) is reported. Epitaxial films of BaTiO3 on (100) MgO are deposited using the low-melting metal-organic precursor, Ba(hfa)2·pentaethyleneglycol ethyl butyl ether [Ba(hfa)2·PEB]. The precursor is a liquid during deposition, providing a stable vapor pressure. The use of this precursor in growth process provides better compositional control than is possible with a solid precursor, Ba(hfa)2·tetraglyme. The volatility characteristics of the new precursor are evaluated using vacuum thermogravimetric analysis (TGA).

Original languageEnglish
Pages (from-to)175-177
Number of pages3
JournalAdvanced Materials
Volume12
Issue number15
Publication statusPublished - Aug 2000

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ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Teren, A. R., Belot, J. A., Edleman, N. L., Marks, T. J., & Wessels, B. W. (2000). MOCVD of epitaxial BaTiO3 films using a liquid barium precursor. Advanced Materials, 12(15), 175-177.