MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties

B. J. Hinds, R. J. McNeely, J. Chen, C. Dias, D. L. Studebaker, Tobin J Marks, T. P. Hogan, J. L. Schindler, C. R. Kannewurf

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Abstract

The suitability of Tl2Ba2CaCu2O8 (Tl-2212) and MgO for growing SIS trilayers by metal-organic chemical vapor deposition (MOCVD) is examined. Low temperature (500°C) epitaxial (100) MgO film growth on (110) LaAlO3, by MOCVD using Mg(dpm)2 (dpm=2,2,6,6-tetramethyl-3,5-heptanedionate) is demonstrated, Tl-2212 does not decompose under these MgO growth conditions, although decomposition occurs at lower O2 partial pressures, To form trilayer structures, BaCaCuO(F) films are first grown on (1 10) LaAlO3 by MOCVD using Ba(hfa)2·mep (hfa=1,1,1,5,5,5-hexafluoropentane-2,4-dionate; mep=2,5,8,11,14,17-hexaoxanonadecane), Ca(hfa)2 tet (tet=2,5,8,11,14-pentaoxapentadecane) and Cu(dpm)2 precursors and are then post-annealed in the presence of bulk Tl2Ba2CaCu2O8 to form Tl-2212. MgO is then deposited by MOCVD. Finally, a top TBCCO layer is grown by MOCVD and subsequent Tl2O anneal to complete the trilayer. Both of the TBCCO layers are highly oriented, while the MgO layers are largely polycrystalline due to the rough underlying Tl-2212. Both TBCCO layers are superconducting (Tc∼105 K).

Original languageEnglish
Pages (from-to)328-331
Number of pages4
JournalJournal of Alloys and Compounds
Volume251
Issue number1-2
Publication statusPublished - Apr 1997

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Organic Chemicals
Organic chemicals
Chemical vapor deposition
Electric properties
Metals
Film growth
Partial pressure
Decomposition

Keywords

  • Devices
  • Dielectrics
  • MOCVD
  • Multilayer
  • Tl-2212

ASJC Scopus subject areas

  • Metals and Alloys

Cite this

Hinds, B. J., McNeely, R. J., Chen, J., Dias, C., Studebaker, D. L., Marks, T. J., ... Kannewurf, C. R. (1997). MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties. Journal of Alloys and Compounds, 251(1-2), 328-331.

MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties. / Hinds, B. J.; McNeely, R. J.; Chen, J.; Dias, C.; Studebaker, D. L.; Marks, Tobin J; Hogan, T. P.; Schindler, J. L.; Kannewurf, C. R.

In: Journal of Alloys and Compounds, Vol. 251, No. 1-2, 04.1997, p. 328-331.

Research output: Contribution to journalArticle

Hinds, BJ, McNeely, RJ, Chen, J, Dias, C, Studebaker, DL, Marks, TJ, Hogan, TP, Schindler, JL & Kannewurf, CR 1997, 'MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties', Journal of Alloys and Compounds, vol. 251, no. 1-2, pp. 328-331.
Hinds, B. J. ; McNeely, R. J. ; Chen, J. ; Dias, C. ; Studebaker, D. L. ; Marks, Tobin J ; Hogan, T. P. ; Schindler, J. L. ; Kannewurf, C. R. / MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties. In: Journal of Alloys and Compounds. 1997 ; Vol. 251, No. 1-2. pp. 328-331.
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abstract = "The suitability of Tl2Ba2CaCu2O8 (Tl-2212) and MgO for growing SIS trilayers by metal-organic chemical vapor deposition (MOCVD) is examined. Low temperature (500°C) epitaxial (100) MgO film growth on (110) LaAlO3, by MOCVD using Mg(dpm)2 (dpm=2,2,6,6-tetramethyl-3,5-heptanedionate) is demonstrated, Tl-2212 does not decompose under these MgO growth conditions, although decomposition occurs at lower O2 partial pressures, To form trilayer structures, BaCaCuO(F) films are first grown on (1 10) LaAlO3 by MOCVD using Ba(hfa)2·mep (hfa=1,1,1,5,5,5-hexafluoropentane-2,4-dionate; mep=2,5,8,11,14,17-hexaoxanonadecane), Ca(hfa)2 tet (tet=2,5,8,11,14-pentaoxapentadecane) and Cu(dpm)2 precursors and are then post-annealed in the presence of bulk Tl2Ba2CaCu2O8 to form Tl-2212. MgO is then deposited by MOCVD. Finally, a top TBCCO layer is grown by MOCVD and subsequent Tl2O anneal to complete the trilayer. Both of the TBCCO layers are highly oriented, while the MgO layers are largely polycrystalline due to the rough underlying Tl-2212. Both TBCCO layers are superconducting (Tc∼105 K).",
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AU - Hinds, B. J.

AU - McNeely, R. J.

AU - Chen, J.

AU - Dias, C.

AU - Studebaker, D. L.

AU - Marks, Tobin J

AU - Hogan, T. P.

AU - Schindler, J. L.

AU - Kannewurf, C. R.

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N2 - The suitability of Tl2Ba2CaCu2O8 (Tl-2212) and MgO for growing SIS trilayers by metal-organic chemical vapor deposition (MOCVD) is examined. Low temperature (500°C) epitaxial (100) MgO film growth on (110) LaAlO3, by MOCVD using Mg(dpm)2 (dpm=2,2,6,6-tetramethyl-3,5-heptanedionate) is demonstrated, Tl-2212 does not decompose under these MgO growth conditions, although decomposition occurs at lower O2 partial pressures, To form trilayer structures, BaCaCuO(F) films are first grown on (1 10) LaAlO3 by MOCVD using Ba(hfa)2·mep (hfa=1,1,1,5,5,5-hexafluoropentane-2,4-dionate; mep=2,5,8,11,14,17-hexaoxanonadecane), Ca(hfa)2 tet (tet=2,5,8,11,14-pentaoxapentadecane) and Cu(dpm)2 precursors and are then post-annealed in the presence of bulk Tl2Ba2CaCu2O8 to form Tl-2212. MgO is then deposited by MOCVD. Finally, a top TBCCO layer is grown by MOCVD and subsequent Tl2O anneal to complete the trilayer. Both of the TBCCO layers are highly oriented, while the MgO layers are largely polycrystalline due to the rough underlying Tl-2212. Both TBCCO layers are superconducting (Tc∼105 K).

AB - The suitability of Tl2Ba2CaCu2O8 (Tl-2212) and MgO for growing SIS trilayers by metal-organic chemical vapor deposition (MOCVD) is examined. Low temperature (500°C) epitaxial (100) MgO film growth on (110) LaAlO3, by MOCVD using Mg(dpm)2 (dpm=2,2,6,6-tetramethyl-3,5-heptanedionate) is demonstrated, Tl-2212 does not decompose under these MgO growth conditions, although decomposition occurs at lower O2 partial pressures, To form trilayer structures, BaCaCuO(F) films are first grown on (1 10) LaAlO3 by MOCVD using Ba(hfa)2·mep (hfa=1,1,1,5,5,5-hexafluoropentane-2,4-dionate; mep=2,5,8,11,14,17-hexaoxanonadecane), Ca(hfa)2 tet (tet=2,5,8,11,14-pentaoxapentadecane) and Cu(dpm)2 precursors and are then post-annealed in the presence of bulk Tl2Ba2CaCu2O8 to form Tl-2212. MgO is then deposited by MOCVD. Finally, a top TBCCO layer is grown by MOCVD and subsequent Tl2O anneal to complete the trilayer. Both of the TBCCO layers are highly oriented, while the MgO layers are largely polycrystalline due to the rough underlying Tl-2212. Both TBCCO layers are superconducting (Tc∼105 K).

KW - Devices

KW - Dielectrics

KW - MOCVD

KW - Multilayer

KW - Tl-2212

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M3 - Article

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