Abstract
Low pressure metal-organic chemical vapor deposition has been used to grow dielectric thin films of the tetragonal perovskites LaSrGaO4 and PrSrGaO4 on (110) LaAlO3 using the volatile metal sources Pr(dpm)3, La(hfa)3·tri, Ga(dpm)3, and Sr(hfa)2·tet (dpm = dipivaloylmethanate, hfa = hexafluoroacetylacetonate, tet = tetraglyme, and tri = triglyme). The PrSrGaO4, a new ternary oxide, was found to have a body-centered tetragonal lattice with a = b = 3.80 and c = 12.59 angstrom. Epitaxial c-axis oriented growth of these materials has been revealed by both x-ray and electron diffraction, with an average surface roughness, measured by AFM, of 1.2 nm for LaSrGaO4 and 3.0 nm for PrSrGaO4. In addition to this, the ability of these materials to function as lattice-matched buffer layers for the growth of the high temperature superconductor YBa2Cu3O7-x has been explored. The superconductive properties of the YBCO layer do not indicate any degradation attributable to the buffer layers, with the onset of superconductivity displaying a sharp metal-superconductor transition at Tc = 87.3 K and 84.5 K for the LaSrGaO4 and PrSrGaO4 systems, respectively.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 67-78 |
| Number of pages | 12 |
| Volume | 415 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 27 1995 → Dec 2 1995 |
Other
| Other | Proceedings of the 1995 MRS Fall Meeting |
|---|---|
| City | Boston, MA, USA |
| Period | 11/27/95 → 12/2/95 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues. / Marks, Tobin J; Belot, J. A.; Hinds, B. J.; Chen, J.; Studebaker, D.; Lei, J.; Chang, Robert P. H.; Schindler, J. L.; Kannewurf, C. R.
Materials Research Society Symposium - Proceedings. Vol. 415 Materials Research Society, 1996. p. 67-78.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues
AU - Marks, Tobin J
AU - Belot, J. A.
AU - Hinds, B. J.
AU - Chen, J.
AU - Studebaker, D.
AU - Lei, J.
AU - Chang, Robert P. H.
AU - Schindler, J. L.
AU - Kannewurf, C. R.
PY - 1996
Y1 - 1996
N2 - Low pressure metal-organic chemical vapor deposition has been used to grow dielectric thin films of the tetragonal perovskites LaSrGaO4 and PrSrGaO4 on (110) LaAlO3 using the volatile metal sources Pr(dpm)3, La(hfa)3·tri, Ga(dpm)3, and Sr(hfa)2·tet (dpm = dipivaloylmethanate, hfa = hexafluoroacetylacetonate, tet = tetraglyme, and tri = triglyme). The PrSrGaO4, a new ternary oxide, was found to have a body-centered tetragonal lattice with a = b = 3.80 and c = 12.59 angstrom. Epitaxial c-axis oriented growth of these materials has been revealed by both x-ray and electron diffraction, with an average surface roughness, measured by AFM, of 1.2 nm for LaSrGaO4 and 3.0 nm for PrSrGaO4. In addition to this, the ability of these materials to function as lattice-matched buffer layers for the growth of the high temperature superconductor YBa2Cu3O7-x has been explored. The superconductive properties of the YBCO layer do not indicate any degradation attributable to the buffer layers, with the onset of superconductivity displaying a sharp metal-superconductor transition at Tc = 87.3 K and 84.5 K for the LaSrGaO4 and PrSrGaO4 systems, respectively.
AB - Low pressure metal-organic chemical vapor deposition has been used to grow dielectric thin films of the tetragonal perovskites LaSrGaO4 and PrSrGaO4 on (110) LaAlO3 using the volatile metal sources Pr(dpm)3, La(hfa)3·tri, Ga(dpm)3, and Sr(hfa)2·tet (dpm = dipivaloylmethanate, hfa = hexafluoroacetylacetonate, tet = tetraglyme, and tri = triglyme). The PrSrGaO4, a new ternary oxide, was found to have a body-centered tetragonal lattice with a = b = 3.80 and c = 12.59 angstrom. Epitaxial c-axis oriented growth of these materials has been revealed by both x-ray and electron diffraction, with an average surface roughness, measured by AFM, of 1.2 nm for LaSrGaO4 and 3.0 nm for PrSrGaO4. In addition to this, the ability of these materials to function as lattice-matched buffer layers for the growth of the high temperature superconductor YBa2Cu3O7-x has been explored. The superconductive properties of the YBCO layer do not indicate any degradation attributable to the buffer layers, with the onset of superconductivity displaying a sharp metal-superconductor transition at Tc = 87.3 K and 84.5 K for the LaSrGaO4 and PrSrGaO4 systems, respectively.
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M3 - Conference contribution
VL - 415
SP - 67
EP - 78
BT - Materials Research Society Symposium - Proceedings
PB - Materials Research Society
ER -