MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues

Tobin J Marks, J. A. Belot, B. J. Hinds, J. Chen, D. Studebaker, J. Lei, Robert P. H. Chang, J. L. Schindler, C. R. Kannewurf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Low pressure metal-organic chemical vapor deposition has been used to grow dielectric thin films of the tetragonal perovskites LaSrGaO4 and PrSrGaO4 on (110) LaAlO3 using the volatile metal sources Pr(dpm)3, La(hfa)3·tri, Ga(dpm)3, and Sr(hfa)2·tet (dpm = dipivaloylmethanate, hfa = hexafluoroacetylacetonate, tet = tetraglyme, and tri = triglyme). The PrSrGaO4, a new ternary oxide, was found to have a body-centered tetragonal lattice with a = b = 3.80 and c = 12.59 angstrom. Epitaxial c-axis oriented growth of these materials has been revealed by both x-ray and electron diffraction, with an average surface roughness, measured by AFM, of 1.2 nm for LaSrGaO4 and 3.0 nm for PrSrGaO4. In addition to this, the ability of these materials to function as lattice-matched buffer layers for the growth of the high temperature superconductor YBa2Cu3O7-x has been explored. The superconductive properties of the YBCO layer do not indicate any degradation attributable to the buffer layers, with the onset of superconductivity displaying a sharp metal-superconductor transition at Tc = 87.3 K and 84.5 K for the LaSrGaO4 and PrSrGaO4 systems, respectively.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages67-78
Number of pages12
Volume415
Publication statusPublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 2 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/27/9512/2/95

Fingerprint

Metallorganic chemical vapor deposition
Metals
Buffer layers
Thin films
Processing
Organic Chemicals
Dielectric films
High temperature superconductors
Organic chemicals
Superconductivity
Electron diffraction
Oxides
Superconducting materials
Chemical vapor deposition
Surface roughness
Degradation
X rays

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Marks, T. J., Belot, J. A., Hinds, B. J., Chen, J., Studebaker, D., Lei, J., ... Kannewurf, C. R. (1996). MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues. In Materials Research Society Symposium - Proceedings (Vol. 415, pp. 67-78). Materials Research Society.

MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues. / Marks, Tobin J; Belot, J. A.; Hinds, B. J.; Chen, J.; Studebaker, D.; Lei, J.; Chang, Robert P. H.; Schindler, J. L.; Kannewurf, C. R.

Materials Research Society Symposium - Proceedings. Vol. 415 Materials Research Society, 1996. p. 67-78.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Marks, TJ, Belot, JA, Hinds, BJ, Chen, J, Studebaker, D, Lei, J, Chang, RPH, Schindler, JL & Kannewurf, CR 1996, MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues. in Materials Research Society Symposium - Proceedings. vol. 415, Materials Research Society, pp. 67-78, Proceedings of the 1995 MRS Fall Meeting, Boston, MA, USA, 11/27/95.
Marks TJ, Belot JA, Hinds BJ, Chen J, Studebaker D, Lei J et al. MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues. In Materials Research Society Symposium - Proceedings. Vol. 415. Materials Research Society. 1996. p. 67-78
Marks, Tobin J ; Belot, J. A. ; Hinds, B. J. ; Chen, J. ; Studebaker, D. ; Lei, J. ; Chang, Robert P. H. ; Schindler, J. L. ; Kannewurf, C. R. / MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues. Materials Research Society Symposium - Proceedings. Vol. 415 Materials Research Society, 1996. pp. 67-78
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abstract = "Low pressure metal-organic chemical vapor deposition has been used to grow dielectric thin films of the tetragonal perovskites LaSrGaO4 and PrSrGaO4 on (110) LaAlO3 using the volatile metal sources Pr(dpm)3, La(hfa)3·tri, Ga(dpm)3, and Sr(hfa)2·tet (dpm = dipivaloylmethanate, hfa = hexafluoroacetylacetonate, tet = tetraglyme, and tri = triglyme). The PrSrGaO4, a new ternary oxide, was found to have a body-centered tetragonal lattice with a = b = 3.80 and c = 12.59 angstrom. Epitaxial c-axis oriented growth of these materials has been revealed by both x-ray and electron diffraction, with an average surface roughness, measured by AFM, of 1.2 nm for LaSrGaO4 and 3.0 nm for PrSrGaO4. In addition to this, the ability of these materials to function as lattice-matched buffer layers for the growth of the high temperature superconductor YBa2Cu3O7-x has been explored. The superconductive properties of the YBCO layer do not indicate any degradation attributable to the buffer layers, with the onset of superconductivity displaying a sharp metal-superconductor transition at Tc = 87.3 K and 84.5 K for the LaSrGaO4 and PrSrGaO4 systems, respectively.",
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AU - Marks, Tobin J

AU - Belot, J. A.

AU - Hinds, B. J.

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AU - Lei, J.

AU - Chang, Robert P. H.

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N2 - Low pressure metal-organic chemical vapor deposition has been used to grow dielectric thin films of the tetragonal perovskites LaSrGaO4 and PrSrGaO4 on (110) LaAlO3 using the volatile metal sources Pr(dpm)3, La(hfa)3·tri, Ga(dpm)3, and Sr(hfa)2·tet (dpm = dipivaloylmethanate, hfa = hexafluoroacetylacetonate, tet = tetraglyme, and tri = triglyme). The PrSrGaO4, a new ternary oxide, was found to have a body-centered tetragonal lattice with a = b = 3.80 and c = 12.59 angstrom. Epitaxial c-axis oriented growth of these materials has been revealed by both x-ray and electron diffraction, with an average surface roughness, measured by AFM, of 1.2 nm for LaSrGaO4 and 3.0 nm for PrSrGaO4. In addition to this, the ability of these materials to function as lattice-matched buffer layers for the growth of the high temperature superconductor YBa2Cu3O7-x has been explored. The superconductive properties of the YBCO layer do not indicate any degradation attributable to the buffer layers, with the onset of superconductivity displaying a sharp metal-superconductor transition at Tc = 87.3 K and 84.5 K for the LaSrGaO4 and PrSrGaO4 systems, respectively.

AB - Low pressure metal-organic chemical vapor deposition has been used to grow dielectric thin films of the tetragonal perovskites LaSrGaO4 and PrSrGaO4 on (110) LaAlO3 using the volatile metal sources Pr(dpm)3, La(hfa)3·tri, Ga(dpm)3, and Sr(hfa)2·tet (dpm = dipivaloylmethanate, hfa = hexafluoroacetylacetonate, tet = tetraglyme, and tri = triglyme). The PrSrGaO4, a new ternary oxide, was found to have a body-centered tetragonal lattice with a = b = 3.80 and c = 12.59 angstrom. Epitaxial c-axis oriented growth of these materials has been revealed by both x-ray and electron diffraction, with an average surface roughness, measured by AFM, of 1.2 nm for LaSrGaO4 and 3.0 nm for PrSrGaO4. In addition to this, the ability of these materials to function as lattice-matched buffer layers for the growth of the high temperature superconductor YBa2Cu3O7-x has been explored. The superconductive properties of the YBCO layer do not indicate any degradation attributable to the buffer layers, with the onset of superconductivity displaying a sharp metal-superconductor transition at Tc = 87.3 K and 84.5 K for the LaSrGaO4 and PrSrGaO4 systems, respectively.

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