MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues

Tobin J Marks; J. A. Belot; B. J. Hinds; J. Chen; D. Studebaker; J. Lei; Robert P. H. Chang; J. L. Schindler; C. R. Kannewurf

MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues

Tobin J Marks, J. A. Belot, B. J. Hinds, J. Chen, D. Studebaker, J. Lei, Robert P. H. Chang, J. L. Schindler, C. R. Kannewurf

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Low pressure metal-organic chemical vapor deposition has been used to grow dielectric thin films of the tetragonal perovskites LaSrGaO₄ and PrSrGaO₄ on (110) LaAlO₃ using the volatile metal sources Pr(dpm)₃, La(hfa)₃·tri, Ga(dpm)₃, and Sr(hfa)₂·tet (dpm = dipivaloylmethanate, hfa = hexafluoroacetylacetonate, tet = tetraglyme, and tri = triglyme). The PrSrGaO₄, a new ternary oxide, was found to have a body-centered tetragonal lattice with a = b = 3.80 and c = 12.59 angstrom. Epitaxial c-axis oriented growth of these materials has been revealed by both x-ray and electron diffraction, with an average surface roughness, measured by AFM, of 1.2 nm for LaSrGaO₄ and 3.0 nm for PrSrGaO₄. In addition to this, the ability of these materials to function as lattice-matched buffer layers for the growth of the high temperature superconductor YBa₂Cu₃O_7-x has been explored. The superconductive properties of the YBCO layer do not indicate any degradation attributable to the buffer layers, with the onset of superconductivity displaying a sharp metal-superconductor transition at T_c = 87.3 K and 84.5 K for the LaSrGaO₄ and PrSrGaO₄ systems, respectively.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	67-78
Number of pages	12
Volume	415
Publication status	Published - 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 27 1995 → Dec 2 1995

Other

Other	Proceedings of the 1995 MRS Fall Meeting
City	Boston, MA, USA
Period	11/27/95 → 12/2/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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Marks, T. J., Belot, J. A., Hinds, B. J., Chen, J., Studebaker, D., Lei, J., Chang, R. P. H., Schindler, J. L., & Kannewurf, C. R. (1996). MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues. In Materials Research Society Symposium - Proceedings (Vol. 415, pp. 67-78). Materials Research Society.

MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues. / Marks, Tobin J; Belot, J. A.; Hinds, B. J.; Chen, J.; Studebaker, D.; Lei, J.; Chang, Robert P. H.; Schindler, J. L.; Kannewurf, C. R.

Materials Research Society Symposium - Proceedings. Vol. 415 Materials Research Society, 1996. p. 67-78.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Marks, TJ, Belot, JA, Hinds, BJ, Chen, J, Studebaker, D, Lei, J, Chang, RPH, Schindler, JL & Kannewurf, CR 1996, MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues. in Materials Research Society Symposium - Proceedings. vol. 415, Materials Research Society, pp. 67-78, Proceedings of the 1995 MRS Fall Meeting, Boston, MA, USA, 11/27/95.

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title = "MOCVD routes to thin films for superconducting applications. Precursor synthesis and film processing issues",

abstract = "Low pressure metal-organic chemical vapor deposition has been used to grow dielectric thin films of the tetragonal perovskites LaSrGaO4 and PrSrGaO4 on (110) LaAlO3 using the volatile metal sources Pr(dpm)3, La(hfa)3·tri, Ga(dpm)3, and Sr(hfa)2·tet (dpm = dipivaloylmethanate, hfa = hexafluoroacetylacetonate, tet = tetraglyme, and tri = triglyme). The PrSrGaO4, a new ternary oxide, was found to have a body-centered tetragonal lattice with a = b = 3.80 and c = 12.59 angstrom. Epitaxial c-axis oriented growth of these materials has been revealed by both x-ray and electron diffraction, with an average surface roughness, measured by AFM, of 1.2 nm for LaSrGaO4 and 3.0 nm for PrSrGaO4. In addition to this, the ability of these materials to function as lattice-matched buffer layers for the growth of the high temperature superconductor YBa2Cu3O7-x has been explored. The superconductive properties of the YBCO layer do not indicate any degradation attributable to the buffer layers, with the onset of superconductivity displaying a sharp metal-superconductor transition at Tc = 87.3 K and 84.5 K for the LaSrGaO4 and PrSrGaO4 systems, respectively.",

author = "Marks, {Tobin J} and Belot, {J. A.} and Hinds, {B. J.} and J. Chen and D. Studebaker and J. Lei and Chang, {Robert P. H.} and Schindler, {J. L.} and Kannewurf, {C. R.}",

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AU - Marks, Tobin J

AU - Belot, J. A.

AU - Hinds, B. J.

AU - Chen, J.

AU - Studebaker, D.

AU - Lei, J.

AU - Chang, Robert P. H.

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N2 - Low pressure metal-organic chemical vapor deposition has been used to grow dielectric thin films of the tetragonal perovskites LaSrGaO4 and PrSrGaO4 on (110) LaAlO3 using the volatile metal sources Pr(dpm)3, La(hfa)3·tri, Ga(dpm)3, and Sr(hfa)2·tet (dpm = dipivaloylmethanate, hfa = hexafluoroacetylacetonate, tet = tetraglyme, and tri = triglyme). The PrSrGaO4, a new ternary oxide, was found to have a body-centered tetragonal lattice with a = b = 3.80 and c = 12.59 angstrom. Epitaxial c-axis oriented growth of these materials has been revealed by both x-ray and electron diffraction, with an average surface roughness, measured by AFM, of 1.2 nm for LaSrGaO4 and 3.0 nm for PrSrGaO4. In addition to this, the ability of these materials to function as lattice-matched buffer layers for the growth of the high temperature superconductor YBa2Cu3O7-x has been explored. The superconductive properties of the YBCO layer do not indicate any degradation attributable to the buffer layers, with the onset of superconductivity displaying a sharp metal-superconductor transition at Tc = 87.3 K and 84.5 K for the LaSrGaO4 and PrSrGaO4 systems, respectively.

AB - Low pressure metal-organic chemical vapor deposition has been used to grow dielectric thin films of the tetragonal perovskites LaSrGaO4 and PrSrGaO4 on (110) LaAlO3 using the volatile metal sources Pr(dpm)3, La(hfa)3·tri, Ga(dpm)3, and Sr(hfa)2·tet (dpm = dipivaloylmethanate, hfa = hexafluoroacetylacetonate, tet = tetraglyme, and tri = triglyme). The PrSrGaO4, a new ternary oxide, was found to have a body-centered tetragonal lattice with a = b = 3.80 and c = 12.59 angstrom. Epitaxial c-axis oriented growth of these materials has been revealed by both x-ray and electron diffraction, with an average surface roughness, measured by AFM, of 1.2 nm for LaSrGaO4 and 3.0 nm for PrSrGaO4. In addition to this, the ability of these materials to function as lattice-matched buffer layers for the growth of the high temperature superconductor YBa2Cu3O7-x has been explored. The superconductive properties of the YBCO layer do not indicate any degradation attributable to the buffer layers, with the onset of superconductivity displaying a sharp metal-superconductor transition at Tc = 87.3 K and 84.5 K for the LaSrGaO4 and PrSrGaO4 systems, respectively.

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