Abstract
A simple defect interaction model was developed that explains the identical activation energies observed for carbon and silicon diffusion in single-crystal silicon carbide. In accord with experimental measurement of nonstoichiometry, the model requires a substantial concentration of silicon anti-site defects. The diffusion of silicon is limited by the motion of these defects; this is suggested to occur by their interaction with carbon vacancies. The model predicts that boron doping will increase both carbon and silicon diffusion coefficients.
Original language | English |
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Journal | Journal of the American Ceramic Society |
Volume | 69 |
Issue number | 2 |
Publication status | Published - Feb 1986 |
ASJC Scopus subject areas
- Ceramics and Composites