Abstract
A simple defect interaction model was developed that explains the identical activation energies observed for carbon and silicon diffusion in single-crystal silicon carbide. In accord with experimental measurement of nonstoichiometry, the model requires a substantial concentration of silicon anti-site defects. The diffusion of silicon is limited by the motion of these defects; this is suggested to occur by their interaction with carbon vacancies. The model predicts that boron doping will increase both carbon and silicon diffusion coefficients.
| Original language | English |
|---|---|
| Journal | Journal of the American Ceramic Society |
| Volume | 69 |
| Issue number | 2 |
| Publication status | Published - Feb 1986 |
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ASJC Scopus subject areas
- Ceramics and Composites
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MODEL FOR SILICON SELF-DIFFUSION IN SILICON CARBIDE : ANTI-SITE DEFECT MOTION. / Birnie, Dunbar P.
In: Journal of the American Ceramic Society, Vol. 69, No. 2, 02.1986.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - MODEL FOR SILICON SELF-DIFFUSION IN SILICON CARBIDE
T2 - ANTI-SITE DEFECT MOTION.
AU - Birnie, Dunbar P
PY - 1986/2
Y1 - 1986/2
N2 - A simple defect interaction model was developed that explains the identical activation energies observed for carbon and silicon diffusion in single-crystal silicon carbide. In accord with experimental measurement of nonstoichiometry, the model requires a substantial concentration of silicon anti-site defects. The diffusion of silicon is limited by the motion of these defects; this is suggested to occur by their interaction with carbon vacancies. The model predicts that boron doping will increase both carbon and silicon diffusion coefficients.
AB - A simple defect interaction model was developed that explains the identical activation energies observed for carbon and silicon diffusion in single-crystal silicon carbide. In accord with experimental measurement of nonstoichiometry, the model requires a substantial concentration of silicon anti-site defects. The diffusion of silicon is limited by the motion of these defects; this is suggested to occur by their interaction with carbon vacancies. The model predicts that boron doping will increase both carbon and silicon diffusion coefficients.
UR - http://www.scopus.com/inward/record.url?scp=0022662219&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0022662219&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0022662219
VL - 69
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 2
ER -