A simple defect interaction model was developed that explains the identical activation energies observed for carbon and silicon diffusion in single-crystal silicon carbide. In accord with experimental measurement of nonstoichiometry, the model requires a substantial concentration of silicon anti-site defects. The diffusion of silicon is limited by the motion of these defects; this is suggested to occur by their interaction with carbon vacancies. The model predicts that boron doping will increase both carbon and silicon diffusion coefficients.
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - Feb 1986|
ASJC Scopus subject areas
- Ceramics and Composites