Abstract
We present a comprehensive modeling study of a high-speed gallium arsenide electro-optic modulator with ultralow switching voltages and large modulation bandwidths enabled by transparent conducting (TC) electrodes. The driving voltage, optical insertion loss, and modulation bandwidth of the TC-enabled modulator are systematically analyzed. Optimized designs for both a top-down and a side conduction geometry using Ta 2O 5 as both buffer and side cladding layers are presented. The results predict half-wave voltages from 0.5 down to 0.2 V, optical insertion losses of 6-10 dB, and optical 3 dB modulation bandwidths from 25-50 GHz for a top-down conduction geometry and 15-30 GHz for a side conduction geometry, assuming that proper impedance transforming parts and terminations are used. The use of benzocyclobutane as side cladding layers in the top-down conduction geometry to realize direct impedance matching was also explored. The corresponding modulation bandwidths are 13 GHz for 0.5 V case and 6 GHz for 0.2 V case, mainly limited by RF-optical wave velocity mismatch.
| Original language | English |
|---|---|
| Article number | 6144684 |
| Pages (from-to) | 1-9 |
| Number of pages | 9 |
| Journal | Journal of Lightwave Technology |
| Volume | 30 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2012 |
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Keywords
- Electro-optic (EO) modulation
- gallium arsenide (GaAs)
- transparent conducting oxide (TCO)
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
Cite this
Modeling and design of high-speed ultralow voltage GaAs electro-optic modulators enabled by transparent conducting materials. / Yi, Fei; Ou, Fang; Liu, Boyang; Huang, Yingyan; Marks, Tobin J; Ho, Seng Tiong.
In: Journal of Lightwave Technology, Vol. 30, No. 12, 6144684, 2012, p. 1-9.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Modeling and design of high-speed ultralow voltage GaAs electro-optic modulators enabled by transparent conducting materials
AU - Yi, Fei
AU - Ou, Fang
AU - Liu, Boyang
AU - Huang, Yingyan
AU - Marks, Tobin J
AU - Ho, Seng Tiong
PY - 2012
Y1 - 2012
N2 - We present a comprehensive modeling study of a high-speed gallium arsenide electro-optic modulator with ultralow switching voltages and large modulation bandwidths enabled by transparent conducting (TC) electrodes. The driving voltage, optical insertion loss, and modulation bandwidth of the TC-enabled modulator are systematically analyzed. Optimized designs for both a top-down and a side conduction geometry using Ta 2O 5 as both buffer and side cladding layers are presented. The results predict half-wave voltages from 0.5 down to 0.2 V, optical insertion losses of 6-10 dB, and optical 3 dB modulation bandwidths from 25-50 GHz for a top-down conduction geometry and 15-30 GHz for a side conduction geometry, assuming that proper impedance transforming parts and terminations are used. The use of benzocyclobutane as side cladding layers in the top-down conduction geometry to realize direct impedance matching was also explored. The corresponding modulation bandwidths are 13 GHz for 0.5 V case and 6 GHz for 0.2 V case, mainly limited by RF-optical wave velocity mismatch.
AB - We present a comprehensive modeling study of a high-speed gallium arsenide electro-optic modulator with ultralow switching voltages and large modulation bandwidths enabled by transparent conducting (TC) electrodes. The driving voltage, optical insertion loss, and modulation bandwidth of the TC-enabled modulator are systematically analyzed. Optimized designs for both a top-down and a side conduction geometry using Ta 2O 5 as both buffer and side cladding layers are presented. The results predict half-wave voltages from 0.5 down to 0.2 V, optical insertion losses of 6-10 dB, and optical 3 dB modulation bandwidths from 25-50 GHz for a top-down conduction geometry and 15-30 GHz for a side conduction geometry, assuming that proper impedance transforming parts and terminations are used. The use of benzocyclobutane as side cladding layers in the top-down conduction geometry to realize direct impedance matching was also explored. The corresponding modulation bandwidths are 13 GHz for 0.5 V case and 6 GHz for 0.2 V case, mainly limited by RF-optical wave velocity mismatch.
KW - Electro-optic (EO) modulation
KW - gallium arsenide (GaAs)
KW - transparent conducting oxide (TCO)
UR - http://www.scopus.com/inward/record.url?scp=84860287703&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860287703&partnerID=8YFLogxK
U2 - 10.1109/JLT.2012.2186556
DO - 10.1109/JLT.2012.2186556
M3 - Article
AN - SCOPUS:84860287703
VL - 30
SP - 1
EP - 9
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
SN - 0733-8724
IS - 12
M1 - 6144684
ER -