Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes

Qinglan Huang; Ji Cui; Tobin J Marks

Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes

Qinglan Huang, Ji Cui, Tobin J Marks

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	American Chemical Society, Polymer Preprints, Division of Polymer Chemistry
Publisher	Polymer Preprints ACS
Pages	501-502
Number of pages	2
Volume	43
Edition	2
Publication status	Published - 2002
Event	224th ACS National Meeting - Boston, MA, United States Duration: Aug 18 2002 → Aug 22 2002

Other

Other	224th ACS National Meeting
Country	United States
City	Boston, MA
Period	8/18/02 → 8/22/02

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Polymers and Plastics

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Cite this

Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes. / Huang, Qinglan; Cui, Ji; Marks, Tobin J.

American Chemical Society, Polymer Preprints, Division of Polymer Chemistry. Vol. 43 2. ed. Polymer Preprints ACS, 2002. p. 501-502.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Huang, Q, Cui, J & Marks, TJ 2002, Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes. in American Chemical Society, Polymer Preprints, Division of Polymer Chemistry. 2 edn, vol. 43, Polymer Preprints ACS, pp. 501-502, 224th ACS National Meeting, Boston, MA, United States, 8/18/02.

@inproceedings{b31bc293c64a41589a5029f72a6b0a39,

title = "Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes",

author = "Qinglan Huang and Ji Cui and Marks, {Tobin J}",

year = "2002",

language = "English",

volume = "43",

pages = "501--502",

booktitle = "American Chemical Society, Polymer Preprints, Division of Polymer Chemistry",

publisher = "Polymer Preprints ACS",

edition = "2",

note = "224th ACS National Meeting ; Conference date: 18-08-2002 Through 22-08-2002",

}

TY - GEN

T1 - Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes

AU - Huang, Qinglan

AU - Cui, Ji

AU - Marks, Tobin J

PY - 2002

Y1 - 2002

UR - http://www.scopus.com/inward/record.url?scp=84899548163&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899548163&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84899548163

VL - 43

SP - 501

EP - 502

BT - American Chemical Society, Polymer Preprints, Division of Polymer Chemistry

PB - Polymer Preprints ACS

T2 - 224th ACS National Meeting

Y2 - 18 August 2002 through 22 August 2002

ER -