Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes

Qinglan Huang; Ji Cui; Tobin J Marks

Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes

Qinglan Huang, Ji Cui, Tobin J Marks

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	American Chemical Society, Polymer Preprints, Division of Polymer Chemistry
Publisher	Polymer Preprints ACS
Pages	501-502
Number of pages	2
Volume	43
Edition	2
Publication status	Published - 2002
Event	224th ACS National Meeting - Boston, MA, United States Duration: Aug 18 2002 → Aug 22 2002

Other

Other	224th ACS National Meeting
Country	United States
City	Boston, MA
Period	8/18/02 → 8/22/02

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Polymers and Plastics

Cite this

Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes. / Huang, Qinglan; Cui, Ji; Marks, Tobin J.

American Chemical Society, Polymer Preprints, Division of Polymer Chemistry. Vol. 43 2. ed. Polymer Preprints ACS, 2002. p. 501-502.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Huang, Q, Cui, J & Marks, TJ 2002, Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes. in American Chemical Society, Polymer Preprints, Division of Polymer Chemistry. 2 edn, vol. 43, Polymer Preprints ACS, pp. 501-502, 224th ACS National Meeting, Boston, MA, United States, 8/18/02.

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