Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes

Qinglan Huang, Ji Cui, Tobin J Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationAmerican Chemical Society, Polymer Preprints, Division of Polymer Chemistry
PublisherPolymer Preprints ACS
Pages501-502
Number of pages2
Volume43
Edition2
Publication statusPublished - 2002
Event224th ACS National Meeting - Boston, MA, United States
Duration: Aug 18 2002Aug 22 2002

Other

Other224th ACS National Meeting
CountryUnited States
CityBoston, MA
Period8/18/028/22/02

Fingerprint

Organic light emitting diodes (OLED)
Tin oxides
Quantum efficiency
Indium
Luminance
indium tin oxide

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Polymers and Plastics

Cite this

Huang, Q., Cui, J., & Marks, T. J. (2002). Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes. In American Chemical Society, Polymer Preprints, Division of Polymer Chemistry (2 ed., Vol. 43, pp. 501-502). Polymer Preprints ACS.

Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes. / Huang, Qinglan; Cui, Ji; Marks, Tobin J.

American Chemical Society, Polymer Preprints, Division of Polymer Chemistry. Vol. 43 2. ed. Polymer Preprints ACS, 2002. p. 501-502.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Huang, Q, Cui, J & Marks, TJ 2002, Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes. in American Chemical Society, Polymer Preprints, Division of Polymer Chemistry. 2 edn, vol. 43, Polymer Preprints ACS, pp. 501-502, 224th ACS National Meeting, Boston, MA, United States, 8/18/02.
Huang Q, Cui J, Marks TJ. Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes. In American Chemical Society, Polymer Preprints, Division of Polymer Chemistry. 2 ed. Vol. 43. Polymer Preprints ACS. 2002. p. 501-502
Huang, Qinglan ; Cui, Ji ; Marks, Tobin J. / Modification of indium-tin-oxide-hole transport layer interfaces via in situ formation of cross-linked organosiloxane layers. High quantum efficiency/luminance organic light-emitting diodes. American Chemical Society, Polymer Preprints, Division of Polymer Chemistry. Vol. 43 2. ed. Polymer Preprints ACS, 2002. pp. 501-502
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