Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC

H. J. Von Bardeleben, J. L. Cantin, I. C. Vickridge, Yongwei Song, S. Dhar, L. C. Feldman, J. R. Williams, L. Ke, Y. Shishkin, R. P. Devaty, W. J. Choyke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO2 interface are analyzed by EPR in oxidized porous samples. The results on ultrathin thermal oxides show that the NO treatment at 1000°C is insufficient for an efficient reduction of the two dominant paramagnetic interface defects: Pbc centers and carbon clusters. From the NRA and XPS analysis of bulk samples treated under the same conditions we attribute the weak effect to the low nitrogen concentration of only 1% at the interface.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
Pages277-280
Number of pages4
Publication statusPublished - Dec 1 2005
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: Aug 31 2004Sep 4 2004

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)0255-5476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
CountryItaly
CityBologna
Period8/31/049/4/04

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Keywords

  • Interface defects
  • NO treatment
  • Nitridation
  • P centers

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Von Bardeleben, H. J., Cantin, J. L., Vickridge, I. C., Song, Y., Dhar, S., Feldman, L. C., Williams, J. R., Ke, L., Shishkin, Y., Devaty, R. P., & Choyke, W. J. (2005). Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC. In Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials (pp. 277-280). (Materials Science Forum; Vol. 483-485).