Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC

H. J. Von Bardeleben, J. L. Cantin, I. C. Vickridge, Yongwei Song, S. Dhar, Leonard C Feldman, J. R. Williams, L. Ke, Y. Shishkin, R. P. Devaty, W. J. Choyke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO2 interface are analyzed by EPR in oxidized porous samples. The results on ultrathin thermal oxides show that the NO treatment at 1000°C is insufficient for an efficient reduction of the two dominant paramagnetic interface defects: Pbc centers and carbon clusters. From the NRA and XPS analysis of bulk samples treated under the same conditions we attribute the weak effect to the low nitrogen concentration of only 1% at the interface.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages277-280
Number of pages4
Volume483-485
Publication statusPublished - 2005
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: Aug 31 2004Sep 4 2004

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)02555476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
CountryItaly
CityBologna
Period8/31/049/4/04

Fingerprint

Nitric oxide
Paramagnetic resonance
Nitric Oxide
X ray photoelectron spectroscopy
Carbon clusters
Defects
Nitrogen
Heat treatment
Temperature
Oxides
Oxide semiconductors
Hot Temperature

Keywords

  • Interface defects
  • Nitridation
  • NO treatment
  • P centers

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Von Bardeleben, H. J., Cantin, J. L., Vickridge, I. C., Song, Y., Dhar, S., Feldman, L. C., ... Choyke, W. J. (2005). Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC. In Materials Science Forum (Vol. 483-485, pp. 277-280). (Materials Science Forum; Vol. 483-485).

Modification of the oxide/semiconductor interface by high temperature NO treatments : A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC. / Von Bardeleben, H. J.; Cantin, J. L.; Vickridge, I. C.; Song, Yongwei; Dhar, S.; Feldman, Leonard C; Williams, J. R.; Ke, L.; Shishkin, Y.; Devaty, R. P.; Choyke, W. J.

Materials Science Forum. Vol. 483-485 2005. p. 277-280 (Materials Science Forum; Vol. 483-485).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Von Bardeleben, HJ, Cantin, JL, Vickridge, IC, Song, Y, Dhar, S, Feldman, LC, Williams, JR, Ke, L, Shishkin, Y, Devaty, RP & Choyke, WJ 2005, Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC. in Materials Science Forum. vol. 483-485, Materials Science Forum, vol. 483-485, pp. 277-280, 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004, Bologna, Italy, 8/31/04.
Von Bardeleben HJ, Cantin JL, Vickridge IC, Song Y, Dhar S, Feldman LC et al. Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC. In Materials Science Forum. Vol. 483-485. 2005. p. 277-280. (Materials Science Forum).
Von Bardeleben, H. J. ; Cantin, J. L. ; Vickridge, I. C. ; Song, Yongwei ; Dhar, S. ; Feldman, Leonard C ; Williams, J. R. ; Ke, L. ; Shishkin, Y. ; Devaty, R. P. ; Choyke, W. J. / Modification of the oxide/semiconductor interface by high temperature NO treatments : A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC. Materials Science Forum. Vol. 483-485 2005. pp. 277-280 (Materials Science Forum).
@inproceedings{7144040d4300410c88b1011ba0979de4,
title = "Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC",
abstract = "The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO2 interface are analyzed by EPR in oxidized porous samples. The results on ultrathin thermal oxides show that the NO treatment at 1000°C is insufficient for an efficient reduction of the two dominant paramagnetic interface defects: Pbc centers and carbon clusters. From the NRA and XPS analysis of bulk samples treated under the same conditions we attribute the weak effect to the low nitrogen concentration of only 1{\%} at the interface.",
keywords = "Interface defects, Nitridation, NO treatment, P centers",
author = "{Von Bardeleben}, {H. J.} and Cantin, {J. L.} and Vickridge, {I. C.} and Yongwei Song and S. Dhar and Feldman, {Leonard C} and Williams, {J. R.} and L. Ke and Y. Shishkin and Devaty, {R. P.} and Choyke, {W. J.}",
year = "2005",
language = "English",
isbn = "0878499636",
volume = "483-485",
series = "Materials Science Forum",
pages = "277--280",
booktitle = "Materials Science Forum",

}

TY - GEN

T1 - Modification of the oxide/semiconductor interface by high temperature NO treatments

T2 - A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC

AU - Von Bardeleben, H. J.

AU - Cantin, J. L.

AU - Vickridge, I. C.

AU - Song, Yongwei

AU - Dhar, S.

AU - Feldman, Leonard C

AU - Williams, J. R.

AU - Ke, L.

AU - Shishkin, Y.

AU - Devaty, R. P.

AU - Choyke, W. J.

PY - 2005

Y1 - 2005

N2 - The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO2 interface are analyzed by EPR in oxidized porous samples. The results on ultrathin thermal oxides show that the NO treatment at 1000°C is insufficient for an efficient reduction of the two dominant paramagnetic interface defects: Pbc centers and carbon clusters. From the NRA and XPS analysis of bulk samples treated under the same conditions we attribute the weak effect to the low nitrogen concentration of only 1% at the interface.

AB - The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO2 interface are analyzed by EPR in oxidized porous samples. The results on ultrathin thermal oxides show that the NO treatment at 1000°C is insufficient for an efficient reduction of the two dominant paramagnetic interface defects: Pbc centers and carbon clusters. From the NRA and XPS analysis of bulk samples treated under the same conditions we attribute the weak effect to the low nitrogen concentration of only 1% at the interface.

KW - Interface defects

KW - Nitridation

KW - NO treatment

KW - P centers

UR - http://www.scopus.com/inward/record.url?scp=35148859379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35148859379&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:35148859379

SN - 0878499636

SN - 9780878499632

VL - 483-485

T3 - Materials Science Forum

SP - 277

EP - 280

BT - Materials Science Forum

ER -