Modification of transparent and conducting single wall carbon nanotube thin films via bromine functionalization

Giovanni Fanchini, Husnu Emrah Unalan, Manish Chhowalla

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The results of bromine doping of transparent and conducting single wall carbon nanotube (SWNT) thin films are described. Br profoundly effects the density of states (DOS) of SWNTs which leads to dramatic improvement in the electrical properties. The authors show that the role of the Br is not only in shifting the Fermi level but also in forming acceptor sites in metallic SWNTs. These modifications of the DOS through bromination lead to simultaneous increase in both the on/off ratio and mobility of thin film transistors. Furthermore, the transistor characteristics of Br-functionalized SWNTs are similar in air, inert atmosphere, and vacuum.

Original languageEnglish
Article number092114
JournalApplied Physics Letters
Volume90
Issue number9
DOIs
Publication statusPublished - 2007

Fingerprint

bromine
transistors
carbon nanotubes
bromination
conduction
inert atmosphere
thin films
electrical properties
vacuum
air

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Modification of transparent and conducting single wall carbon nanotube thin films via bromine functionalization. / Fanchini, Giovanni; Unalan, Husnu Emrah; Chhowalla, Manish.

In: Applied Physics Letters, Vol. 90, No. 9, 092114, 2007.

Research output: Contribution to journalArticle

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