Modified Deal Grove model for the thermal oxidation of silicon carbide

Y. Song, S. Dhar, Leonard C Feldman, G. Chung, J. R. Williams

Research output: Contribution to journalArticle

155 Citations (Scopus)

Abstract

A modified Deal Grove model was presented for the oxidation of 4H-SiC which took into account CO out-diffusion. The model was applied to data on the oxidation rates for the (0001) Si, (0001̄) C, and (112̄0) a faces. A physical explanation for the large crystal face dependent oxidation rates was provided by an analysis within the model. The results show that the interface reaction plays a key role in the oxidation anisotropy of SiC.

Original languageEnglish
Pages (from-to)4953-4957
Number of pages5
JournalJournal of Applied Physics
Volume95
Issue number9
DOIs
Publication statusPublished - May 1 2004

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silicon carbides
oxidation
anisotropy
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Modified Deal Grove model for the thermal oxidation of silicon carbide. / Song, Y.; Dhar, S.; Feldman, Leonard C; Chung, G.; Williams, J. R.

In: Journal of Applied Physics, Vol. 95, No. 9, 01.05.2004, p. 4953-4957.

Research output: Contribution to journalArticle

Song, Y. ; Dhar, S. ; Feldman, Leonard C ; Chung, G. ; Williams, J. R. / Modified Deal Grove model for the thermal oxidation of silicon carbide. In: Journal of Applied Physics. 2004 ; Vol. 95, No. 9. pp. 4953-4957.
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