A modified Deal Grove model was presented for the oxidation of 4H-SiC which took into account CO out-diffusion. The model was applied to data on the oxidation rates for the (0001) Si, (0001̄) C, and (112̄0) a faces. A physical explanation for the large crystal face dependent oxidation rates was provided by an analysis within the model. The results show that the interface reaction plays a key role in the oxidation anisotropy of SiC.
ASJC Scopus subject areas
- Physics and Astronomy(all)