Modified Deal Grove model for the thermal oxidation of silicon carbide

Y. Song, S. Dhar, L. C. Feldman, G. Chung, J. R. Williams

Research output: Contribution to journalArticle

165 Citations (Scopus)

Abstract

A modified Deal Grove model was presented for the oxidation of 4H-SiC which took into account CO out-diffusion. The model was applied to data on the oxidation rates for the (0001) Si, (0001̄) C, and (112̄0) a faces. A physical explanation for the large crystal face dependent oxidation rates was provided by an analysis within the model. The results show that the interface reaction plays a key role in the oxidation anisotropy of SiC.

Original languageEnglish
Pages (from-to)4953-4957
Number of pages5
JournalJournal of Applied Physics
Volume95
Issue number9
DOIs
Publication statusPublished - May 1 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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