Abstract
We demonstrate the modulation of the transmission of near-infrared light through a periodic array of subwavelength apertures in Ag-V O2 and Au-V O2 double-layer films using the semiconductor-to-metal phase transition in V O2. The transmitted intensity ratio increases by a factor of 8 as the V O2 goes from the semiconductor to the metal phase. We attribute this modulation to the switchable dielectric-permittivity contrast between the air-filled holes in the array and the surrounding V O2 material, a conjecture that is semiquantitatively confirmed by simulation.
Original language | English |
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Article number | 133115 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 13 |
DOIs | |
Publication status | Published - 2006 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)