Abstract
We demonstrate the modulation of the transmission of near-infrared light through a periodic array of subwavelength apertures in Ag-V O2 and Au-V O2 double-layer films using the semiconductor-to-metal phase transition in V O2. The transmitted intensity ratio increases by a factor of 8 as the V O2 goes from the semiconductor to the metal phase. We attribute this modulation to the switchable dielectric-permittivity contrast between the air-filled holes in the array and the surrounding V O2 material, a conjecture that is semiquantitatively confirmed by simulation.
| Original language | English |
|---|---|
| Article number | 133115 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - Apr 10 2006 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Suh, J. Y., Donev, E. U., Lopez, R., Feldman, L. C., & Haglund, R. F. (2006). Modulated optical transmission of subwavelength hole arrays in metal- v O 2 films. Applied Physics Letters, 88(13), [133115]. https://doi.org/10.1063/1.2190463