Modulated optical transmission of subwavelength hole arrays in metal- v O 2 films

J. Y. Suh; E. U. Donev; R. Lopez; L. C. Feldman; R. F. Haglund

doi:10.1063/1.2190463

Modulated optical transmission of subwavelength hole arrays in metal- v O ₂ films

J. Y. Suh, E. U. Donev, R. Lopez, L. C. Feldman, R. F. Haglund

Rutgers University

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

We demonstrate the modulation of the transmission of near-infrared light through a periodic array of subwavelength apertures in Ag-V O2 and Au-V O2 double-layer films using the semiconductor-to-metal phase transition in V O2. The transmitted intensity ratio increases by a factor of 8 as the V O2 goes from the semiconductor to the metal phase. We attribute this modulation to the switchable dielectric-permittivity contrast between the air-filled holes in the array and the surrounding V O2 material, a conjecture that is semiquantitatively confirmed by simulation.

Original language	English
Article number	133115
Journal	Applied Physics Letters
Volume	88
Issue number	13
DOIs	https://doi.org/10.1063/1.2190463
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2190463

Fingerprint Dive into the research topics of 'Modulated optical transmission of subwavelength hole arrays in metal- v O <sub>2</sub> films'. Together they form a unique fingerprint.

Cite this

@article{d02fc2ebcd19470992dd962881e29d76,

title = "Modulated optical transmission of subwavelength hole arrays in metal- v O 2 films",

abstract = "We demonstrate the modulation of the transmission of near-infrared light through a periodic array of subwavelength apertures in Ag-V O2 and Au-V O2 double-layer films using the semiconductor-to-metal phase transition in V O2. The transmitted intensity ratio increases by a factor of 8 as the V O2 goes from the semiconductor to the metal phase. We attribute this modulation to the switchable dielectric-permittivity contrast between the air-filled holes in the array and the surrounding V O2 material, a conjecture that is semiquantitatively confirmed by simulation.",

author = "Suh, {J. Y.} and Donev, {E. U.} and R. Lopez and Feldman, {L. C.} and Haglund, {R. F.}",

note = "Funding Information: The authors thank A. B. Hmelo for helpful discussions on FIB fabrication and F. Villegas and P. B. Gray for their assistance with the SNOM imaging. This research was supported by the U. S. Department of Energy (Nanoscale Science, Engineering and Technology program, DE-FG02-01ER45916) and by a National Science Foundation Nanoscale Integrated Research Team (NIRT) through Project No. DMR-0210785. ",

year = "2006",

doi = "10.1063/1.2190463",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Modulated optical transmission of subwavelength hole arrays in metal- v O 2 films

AU - Suh, J. Y.

AU - Donev, E. U.

AU - Lopez, R.

AU - Feldman, L. C.

AU - Haglund, R. F.

N1 - Funding Information: The authors thank A. B. Hmelo for helpful discussions on FIB fabrication and F. Villegas and P. B. Gray for their assistance with the SNOM imaging. This research was supported by the U. S. Department of Energy (Nanoscale Science, Engineering and Technology program, DE-FG02-01ER45916) and by a National Science Foundation Nanoscale Integrated Research Team (NIRT) through Project No. DMR-0210785.

PY - 2006

Y1 - 2006

N2 - We demonstrate the modulation of the transmission of near-infrared light through a periodic array of subwavelength apertures in Ag-V O2 and Au-V O2 double-layer films using the semiconductor-to-metal phase transition in V O2. The transmitted intensity ratio increases by a factor of 8 as the V O2 goes from the semiconductor to the metal phase. We attribute this modulation to the switchable dielectric-permittivity contrast between the air-filled holes in the array and the surrounding V O2 material, a conjecture that is semiquantitatively confirmed by simulation.

AB - We demonstrate the modulation of the transmission of near-infrared light through a periodic array of subwavelength apertures in Ag-V O2 and Au-V O2 double-layer films using the semiconductor-to-metal phase transition in V O2. The transmitted intensity ratio increases by a factor of 8 as the V O2 goes from the semiconductor to the metal phase. We attribute this modulation to the switchable dielectric-permittivity contrast between the air-filled holes in the array and the surrounding V O2 material, a conjecture that is semiquantitatively confirmed by simulation.

UR - http://www.scopus.com/inward/record.url?scp=33645531516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645531516&partnerID=8YFLogxK

U2 - 10.1063/1.2190463

DO - 10.1063/1.2190463

M3 - Article

AN - SCOPUS:33645531516

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 133115

ER -