Abstract
We demonstrate the modulation of the transmission of near-infrared light through a periodic array of subwavelength apertures in Ag-V O2 and Au-V O2 double-layer films using the semiconductor-to-metal phase transition in V O2. The transmitted intensity ratio increases by a factor of 8 as the V O2 goes from the semiconductor to the metal phase. We attribute this modulation to the switchable dielectric-permittivity contrast between the air-filled holes in the array and the surrounding V O2 material, a conjecture that is semiquantitatively confirmed by simulation.
| Original language | English |
|---|---|
| Article number | 133115 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2006 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Modulated optical transmission of subwavelength hole arrays in metal- v O 2 films. / Suh, J. Y.; Donev, E. U.; Lopez, R.; Feldman, Leonard C; Haglund, R. F.
In: Applied Physics Letters, Vol. 88, No. 13, 133115, 2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Modulated optical transmission of subwavelength hole arrays in metal- v O 2 films
AU - Suh, J. Y.
AU - Donev, E. U.
AU - Lopez, R.
AU - Feldman, Leonard C
AU - Haglund, R. F.
PY - 2006
Y1 - 2006
N2 - We demonstrate the modulation of the transmission of near-infrared light through a periodic array of subwavelength apertures in Ag-V O2 and Au-V O2 double-layer films using the semiconductor-to-metal phase transition in V O2. The transmitted intensity ratio increases by a factor of 8 as the V O2 goes from the semiconductor to the metal phase. We attribute this modulation to the switchable dielectric-permittivity contrast between the air-filled holes in the array and the surrounding V O2 material, a conjecture that is semiquantitatively confirmed by simulation.
AB - We demonstrate the modulation of the transmission of near-infrared light through a periodic array of subwavelength apertures in Ag-V O2 and Au-V O2 double-layer films using the semiconductor-to-metal phase transition in V O2. The transmitted intensity ratio increases by a factor of 8 as the V O2 goes from the semiconductor to the metal phase. We attribute this modulation to the switchable dielectric-permittivity contrast between the air-filled holes in the array and the surrounding V O2 material, a conjecture that is semiquantitatively confirmed by simulation.
UR - http://www.scopus.com/inward/record.url?scp=33645531516&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33645531516&partnerID=8YFLogxK
U2 - 10.1063/1.2190463
DO - 10.1063/1.2190463
M3 - Article
VL - 88
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
M1 - 133115
ER -