Modulating the rate of charge transport in a metal-organic framework thin film using host

guest chemistry

Idan Hod, Omar K. Farha, Joseph T Hupp

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Herein we demonstrate the use of host-guest chemistry to modulate rates of charge transport in metal-organic framework (MOF) films. The kinetics of site-to-site of charge hopping and, in turn, the overall redox conductivity, of a ferrocene-modified MOF can be altered by up to 30-fold by coupling electron exchange to the oxidation-state-dependent formation of inclusion complexes between cyclodextrin and channel-tethered metallocenes.

Original languageEnglish
Pages (from-to)1705-1708
Number of pages4
JournalChemical Communications
Volume52
Issue number8
DOIs
Publication statusPublished - 2016

Fingerprint

Charge transfer
Metals
Thin films
Cyclodextrins
Organometallics
Ion exchange
Oxidation
Kinetics
Electrons
Oxidation-Reduction
ferrocene

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Metals and Alloys

Cite this

Modulating the rate of charge transport in a metal-organic framework thin film using host : guest chemistry. / Hod, Idan; Farha, Omar K.; Hupp, Joseph T.

In: Chemical Communications, Vol. 52, No. 8, 2016, p. 1705-1708.

Research output: Contribution to journalArticle

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