Abstract
The exciton, a quasi-particle that creates a bound state of an electron and a hole, is typically found in semiconductors. It has attracted major attention in the context of both fundamental science and practical applications. Transition metal dichalcogenides (TMDs) are a new class of 2D materials that include direct band-gap semiconductors with strong spin–orbit coupling and many-body interactions. Manipulating new excitons in semiconducting TMDs could generate a novel means of application in nanodevices. Here, the observation of high-energy excitonic peaks in the monolayer-MoS 2 on a SrTiO 3 heterointerface generated by a new complex mechanism is reported, based on a comprehensive study that comprises temperature-dependent optical spectroscopies and first-principles calculations. The appearance of these excitons is attributed to the change in many-body interactions that occurs alongside the interfacial orbital hybridization and spin–orbit coupling brought about by the excitonic effect propagated from the substrate. This has further led to the formation of a Fermi-surface feature at the interface. The results provide an atomic-scale understanding of the heterointerface between monolayer-TMDs and perovskite oxide and highlight the importance of spin–orbit–charge–lattice coupling on the intrinsic properties of atomic-layer heterostructures, which open up a way to manipulate the excitonic effects in monolayer TMDs via an interfacial system.
| Original language | English |
|---|---|
| Article number | 1900446 |
| Journal | Advanced Science |
| DOIs | |
| Publication status | Published - Jan 1 2019 |
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Keywords
- 2D transition metal dichalcogenides
- electronic correlations
- excitons
- heterointerfaces
- perovskite oxides
ASJC Scopus subject areas
- Medicine (miscellaneous)
- Chemical Engineering(all)
- Materials Science(all)
- Biochemistry, Genetics and Molecular Biology (miscellaneous)
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Modulation of New Excitons in Transition Metal Dichalcogenide-Perovskite Oxide System. / Yin, Xinmao; Yang, Ming; Tang, Chi Sin; Wang, Qixing; Xu, Lei; Wu, Jing; Trevisanutto, Paolo Emilio; Zeng, Shengwei; Chin, Xin Yu; Asmara, Teguh Citra; Feng, Yuan Ping; Ariando, Ariando; Chhowalla, Manish; Wang, Shi Jie; Zhang, Wenjing; Rusydi, Andrivo; Wee, Andrew T.S.
In: Advanced Science, 01.01.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Modulation of New Excitons in Transition Metal Dichalcogenide-Perovskite Oxide System
AU - Yin, Xinmao
AU - Yang, Ming
AU - Tang, Chi Sin
AU - Wang, Qixing
AU - Xu, Lei
AU - Wu, Jing
AU - Trevisanutto, Paolo Emilio
AU - Zeng, Shengwei
AU - Chin, Xin Yu
AU - Asmara, Teguh Citra
AU - Feng, Yuan Ping
AU - Ariando, Ariando
AU - Chhowalla, Manish
AU - Wang, Shi Jie
AU - Zhang, Wenjing
AU - Rusydi, Andrivo
AU - Wee, Andrew T.S.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The exciton, a quasi-particle that creates a bound state of an electron and a hole, is typically found in semiconductors. It has attracted major attention in the context of both fundamental science and practical applications. Transition metal dichalcogenides (TMDs) are a new class of 2D materials that include direct band-gap semiconductors with strong spin–orbit coupling and many-body interactions. Manipulating new excitons in semiconducting TMDs could generate a novel means of application in nanodevices. Here, the observation of high-energy excitonic peaks in the monolayer-MoS 2 on a SrTiO 3 heterointerface generated by a new complex mechanism is reported, based on a comprehensive study that comprises temperature-dependent optical spectroscopies and first-principles calculations. The appearance of these excitons is attributed to the change in many-body interactions that occurs alongside the interfacial orbital hybridization and spin–orbit coupling brought about by the excitonic effect propagated from the substrate. This has further led to the formation of a Fermi-surface feature at the interface. The results provide an atomic-scale understanding of the heterointerface between monolayer-TMDs and perovskite oxide and highlight the importance of spin–orbit–charge–lattice coupling on the intrinsic properties of atomic-layer heterostructures, which open up a way to manipulate the excitonic effects in monolayer TMDs via an interfacial system.
AB - The exciton, a quasi-particle that creates a bound state of an electron and a hole, is typically found in semiconductors. It has attracted major attention in the context of both fundamental science and practical applications. Transition metal dichalcogenides (TMDs) are a new class of 2D materials that include direct band-gap semiconductors with strong spin–orbit coupling and many-body interactions. Manipulating new excitons in semiconducting TMDs could generate a novel means of application in nanodevices. Here, the observation of high-energy excitonic peaks in the monolayer-MoS 2 on a SrTiO 3 heterointerface generated by a new complex mechanism is reported, based on a comprehensive study that comprises temperature-dependent optical spectroscopies and first-principles calculations. The appearance of these excitons is attributed to the change in many-body interactions that occurs alongside the interfacial orbital hybridization and spin–orbit coupling brought about by the excitonic effect propagated from the substrate. This has further led to the formation of a Fermi-surface feature at the interface. The results provide an atomic-scale understanding of the heterointerface between monolayer-TMDs and perovskite oxide and highlight the importance of spin–orbit–charge–lattice coupling on the intrinsic properties of atomic-layer heterostructures, which open up a way to manipulate the excitonic effects in monolayer TMDs via an interfacial system.
KW - 2D transition metal dichalcogenides
KW - electronic correlations
KW - excitons
KW - heterointerfaces
KW - perovskite oxides
UR - http://www.scopus.com/inward/record.url?scp=85065174304&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85065174304&partnerID=8YFLogxK
U2 - 10.1002/advs.201900446
DO - 10.1002/advs.201900446
M3 - Article
AN - SCOPUS:85065174304
JO - Advanced Science
JF - Advanced Science
SN - 2198-3844
M1 - 1900446
ER -