Molecular beam epitaxy and reconstructed surfaces - Initial stages of interface formation in group IV-IV structures

H. J. Gossmann, Leonard C Feldman

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

In the last years molecular beam epitaxy (MBE) has become a very important method to create new materials. Scattering and channeling of high-energy ions is a mass-dispersive, surface-sensitive crystallographic technique, particularly suited for the investigation of epitaxial systems. The combination of both techniques allows new insight into some of the fundamental processes at interfaces and surfaces. As an example we discuss the influence of substrate reconstruction on epitaxial growth. We show for the Si/Ge and Si/Si systems that the reordering of the reconstruction-induced displacements at the substrate surface, a necessary condition for epitaxial growth, is critically dependent on the type of reconstruction: Deposition of Ge or Si on Si(100)2×1 at room-temperature relieves the reconstruction, whereas Si(111)7×7 appears unaffected. This difference is discussed in terms of structural models for these surfaces. We shall also discuss the implications of these results with respect to MBE and, in particular, to Si homoepitaxial temperatures.

Original languageEnglish
Pages (from-to)171-179
Number of pages9
JournalApplied Physics A Solids and Surfaces
Volume38
Issue number3
DOIs
Publication statusPublished - Nov 1985

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Molecular beam epitaxy
molecular beam epitaxy
Epitaxial growth
Substrates
Scattering
Ions
Temperature
room temperature
scattering
ions
temperature
energy

Keywords

  • 61.80.Mk
  • 68.20.+t
  • 68.55.+b

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Materials Science(all)
  • Engineering(all)

Cite this

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