Molecular control of the drain current in a buried channel MOSFET

Jinman Yang, L. De La Garza, T. J. Thornton, M. Kozicki, D. Gust

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately - 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 × 1011 cm-2 in the positive charge density located at the surface of the MOSFET.

Original languageEnglish
Title of host publication2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
EditorsM. Laudon, B. Romanowicz
Pages318-321
Number of pages4
Publication statusPublished - Dec 1 2002
Event2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 - San Juan, Puerto Rico
Duration: Apr 21 2002Apr 25 2002

Publication series

Name2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

Other

Other2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
CountryPuerto Rico
CitySan Juan
Period4/21/024/25/02

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Keywords

  • Electron transport
  • Molecular electronics
  • SOI

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yang, J., De La Garza, L., Thornton, T. J., Kozicki, M., & Gust, D. (2002). Molecular control of the drain current in a buried channel MOSFET. In M. Laudon, & B. Romanowicz (Eds.), 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 (pp. 318-321). (2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002).