Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors

Myng Han Yoon, Antonio Facchetti, Tobin J Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Very thin (2.3 - 5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor (OTFT) structures to achieve sub-1 V operating characteristics. These new dielectrics are fabricated via layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well-defined, strongly-adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (400-700 nFcm-2). These multilayers enable OTFT function at very low source-drain, gate, and threshold voltages, and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages61-66
Number of pages6
Volume871
Publication statusPublished - 2005
Event2005 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

Other

Other2005 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/28/054/1/05

Fingerprint

Thin film transistors
Multilayers
Semiconducting organic compounds
Electric potential
Silicon
Threshold voltage
Capacitance
Vapors
Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Yoon, M. H., Facchetti, A., & Marks, T. J. (2005). Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors. In Materials Research Society Symposium Proceedings (Vol. 871, pp. 61-66)

Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors. / Yoon, Myng Han; Facchetti, Antonio; Marks, Tobin J.

Materials Research Society Symposium Proceedings. Vol. 871 2005. p. 61-66.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yoon, MH, Facchetti, A & Marks, TJ 2005, Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors. in Materials Research Society Symposium Proceedings. vol. 871, pp. 61-66, 2005 MRS Spring Meeting, San Francisco, CA, United States, 3/28/05.
Yoon MH, Facchetti A, Marks TJ. Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors. In Materials Research Society Symposium Proceedings. Vol. 871. 2005. p. 61-66
Yoon, Myng Han ; Facchetti, Antonio ; Marks, Tobin J. / Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors. Materials Research Society Symposium Proceedings. Vol. 871 2005. pp. 61-66
@inproceedings{9dd36235d6e54694aa720c57df82aa18,
title = "Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors",
abstract = "Very thin (2.3 - 5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor (OTFT) structures to achieve sub-1 V operating characteristics. These new dielectrics are fabricated via layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well-defined, strongly-adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (400-700 nFcm-2). These multilayers enable OTFT function at very low source-drain, gate, and threshold voltages, and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.",
author = "Yoon, {Myng Han} and Antonio Facchetti and Marks, {Tobin J}",
year = "2005",
language = "English",
isbn = "155899825X",
volume = "871",
pages = "61--66",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Molecular dielectric multilayers for ultra-low-voltage organic thin film transistors

AU - Yoon, Myng Han

AU - Facchetti, Antonio

AU - Marks, Tobin J

PY - 2005

Y1 - 2005

N2 - Very thin (2.3 - 5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor (OTFT) structures to achieve sub-1 V operating characteristics. These new dielectrics are fabricated via layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well-defined, strongly-adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (400-700 nFcm-2). These multilayers enable OTFT function at very low source-drain, gate, and threshold voltages, and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.

AB - Very thin (2.3 - 5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor (OTFT) structures to achieve sub-1 V operating characteristics. These new dielectrics are fabricated via layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well-defined, strongly-adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (400-700 nFcm-2). These multilayers enable OTFT function at very low source-drain, gate, and threshold voltages, and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=34249946343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249946343&partnerID=8YFLogxK

M3 - Conference contribution

SN - 155899825X

SN - 9781558998254

VL - 871

SP - 61

EP - 66

BT - Materials Research Society Symposium Proceedings

ER -