Molecular dynamics simulations of beta-SiC using both fixed charge and variable charge models

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this paper, molecular dynamics simulations have been performed using both fixed charge and variable charge models. In the fixed charge model, partial charges are introduced to Si and C atoms to model the charge transfer observed in first principles studies. The calculated phonon dispersions, elastic constants, and lattice constants are in good accuracy. Variable charge model is also used to obtain geometry and connectivity dependent atomic charges. Our results show that although the variable charge model may not be advantageous in the study of ordered structures, it is important in describing structural disorders such as vacancies.

Original languageEnglish
Article number084505
JournalJournal of Chemical Physics
Volume128
Issue number8
DOIs
Publication statusPublished - 2008

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Molecular dynamics
molecular dynamics
Computer simulation
simulation
Elastic constants
Dispersions
Lattice constants
Vacancies
Charge transfer
elastic properties
charge transfer
disorders
Atoms
Geometry
geometry
atoms

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Molecular dynamics simulations of beta-SiC using both fixed charge and variable charge models. / Ma, Ying; Garofalini, Steve.

In: Journal of Chemical Physics, Vol. 128, No. 8, 084505, 2008.

Research output: Contribution to journalArticle

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