Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes

Capacitance and simulation results

Adina Scott, Chad Risko, Nicholas Valley, Mark A Ratner, David B. Janes

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

There is considerable current interest in using molecular materials to influence the surface potential of semiconductor devices for nanoelectronic and sensing applications. We present experimental capacitance-voltage results showing that systematic Schottky barrier height modulation can be achieved using dipolar molecular layers in gold-molecule-silicon devices. A computational methodology that combines quantum chemistry and traditional electrostatic calculations is used to explore various physical effects that can influence barrier heights in such systems. Nonidealities such as silicon surface states can influence both the potential profile within the device and the validity of the extracted barrier height. Our devices exhibit low surface state densities, but the magnitude of surface potential modulation is modest due to molecular depolarization from the gold contact.

Original languageEnglish
Article number024505
JournalJournal of Applied Physics
Volume107
Issue number2
DOIs
Publication statusPublished - 2010

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capacitance
diodes
modulation
silicon
metals
molecules
simulation
gold
quantum chemistry
semiconductor devices
depolarization
methodology
electrostatics
electric potential
profiles

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes : Capacitance and simulation results. / Scott, Adina; Risko, Chad; Valley, Nicholas; Ratner, Mark A; Janes, David B.

In: Journal of Applied Physics, Vol. 107, No. 2, 024505, 2010.

Research output: Contribution to journalArticle

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