Monolithic integration of GaAlAs superluminescent diode with the optical amplifier

Guotong Du, Yongsheng Zhao, Xuemei Li, Junfeng Song, Weihua Hah, Dingsan Gao, Shengli Wu, Gregory Devane, Kathleen A. Stair, Robert P. H. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Integrated superluminescent diode (SLD) was fabricated using an AlGaAs semiconductor quantum well (SQW) heterostructure wafer. A 3 μm-wide SLD with 300 to approximately 500 μm length is aligned with the 3 μm-wide input aperture of the tapered amplifier. The amplifier is 1.3 to approximately 1.5 mm in length and the gain region expands linearly from 3 μm-wide at the input end to 110 to approximately 130 μm at the output end. The outside stripes of SLD and amplifier regions were etched slightly for restricting lateral current diffusion. Light-current (L-I) characteristics of the integrated SLD were measured under pulse conditions.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Editors Anon
PublisherIEEE
Pages138-139
Number of pages2
Volume1
Publication statusPublished - 1997
EventProceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA
Duration: Nov 10 1997Nov 13 1997

Other

OtherProceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2)
CitySan Francisco, CA, USA
Period11/10/9711/13/97

Fingerprint

Light amplifiers
Diodes
Semiconductor quantum wells
Heterojunctions

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Du, G., Zhao, Y., Li, X., Song, J., Hah, W., Gao, D., ... Chang, R. P. H. (1997). Monolithic integration of GaAlAs superluminescent diode with the optical amplifier. In Anon (Ed.), Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 1, pp. 138-139). IEEE.

Monolithic integration of GaAlAs superluminescent diode with the optical amplifier. / Du, Guotong; Zhao, Yongsheng; Li, Xuemei; Song, Junfeng; Hah, Weihua; Gao, Dingsan; Wu, Shengli; Devane, Gregory; Stair, Kathleen A.; Chang, Robert P. H.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. ed. / Anon. Vol. 1 IEEE, 1997. p. 138-139.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Du, G, Zhao, Y, Li, X, Song, J, Hah, W, Gao, D, Wu, S, Devane, G, Stair, KA & Chang, RPH 1997, Monolithic integration of GaAlAs superluminescent diode with the optical amplifier. in Anon (ed.), Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 1, IEEE, pp. 138-139, Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2), San Francisco, CA, USA, 11/10/97.
Du G, Zhao Y, Li X, Song J, Hah W, Gao D et al. Monolithic integration of GaAlAs superluminescent diode with the optical amplifier. In Anon, editor, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1. IEEE. 1997. p. 138-139
Du, Guotong ; Zhao, Yongsheng ; Li, Xuemei ; Song, Junfeng ; Hah, Weihua ; Gao, Dingsan ; Wu, Shengli ; Devane, Gregory ; Stair, Kathleen A. ; Chang, Robert P. H. / Monolithic integration of GaAlAs superluminescent diode with the optical amplifier. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. editor / Anon. Vol. 1 IEEE, 1997. pp. 138-139
@inproceedings{14208686369d4a0e881fd357e020c54b,
title = "Monolithic integration of GaAlAs superluminescent diode with the optical amplifier",
abstract = "Integrated superluminescent diode (SLD) was fabricated using an AlGaAs semiconductor quantum well (SQW) heterostructure wafer. A 3 μm-wide SLD with 300 to approximately 500 μm length is aligned with the 3 μm-wide input aperture of the tapered amplifier. The amplifier is 1.3 to approximately 1.5 mm in length and the gain region expands linearly from 3 μm-wide at the input end to 110 to approximately 130 μm at the output end. The outside stripes of SLD and amplifier regions were etched slightly for restricting lateral current diffusion. Light-current (L-I) characteristics of the integrated SLD were measured under pulse conditions.",
author = "Guotong Du and Yongsheng Zhao and Xuemei Li and Junfeng Song and Weihua Hah and Dingsan Gao and Shengli Wu and Gregory Devane and Stair, {Kathleen A.} and Chang, {Robert P. H.}",
year = "1997",
language = "English",
volume = "1",
pages = "138--139",
editor = "Anon",
booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",
publisher = "IEEE",

}

TY - GEN

T1 - Monolithic integration of GaAlAs superluminescent diode with the optical amplifier

AU - Du, Guotong

AU - Zhao, Yongsheng

AU - Li, Xuemei

AU - Song, Junfeng

AU - Hah, Weihua

AU - Gao, Dingsan

AU - Wu, Shengli

AU - Devane, Gregory

AU - Stair, Kathleen A.

AU - Chang, Robert P. H.

PY - 1997

Y1 - 1997

N2 - Integrated superluminescent diode (SLD) was fabricated using an AlGaAs semiconductor quantum well (SQW) heterostructure wafer. A 3 μm-wide SLD with 300 to approximately 500 μm length is aligned with the 3 μm-wide input aperture of the tapered amplifier. The amplifier is 1.3 to approximately 1.5 mm in length and the gain region expands linearly from 3 μm-wide at the input end to 110 to approximately 130 μm at the output end. The outside stripes of SLD and amplifier regions were etched slightly for restricting lateral current diffusion. Light-current (L-I) characteristics of the integrated SLD were measured under pulse conditions.

AB - Integrated superluminescent diode (SLD) was fabricated using an AlGaAs semiconductor quantum well (SQW) heterostructure wafer. A 3 μm-wide SLD with 300 to approximately 500 μm length is aligned with the 3 μm-wide input aperture of the tapered amplifier. The amplifier is 1.3 to approximately 1.5 mm in length and the gain region expands linearly from 3 μm-wide at the input end to 110 to approximately 130 μm at the output end. The outside stripes of SLD and amplifier regions were etched slightly for restricting lateral current diffusion. Light-current (L-I) characteristics of the integrated SLD were measured under pulse conditions.

UR - http://www.scopus.com/inward/record.url?scp=0031335335&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031335335&partnerID=8YFLogxK

M3 - Conference contribution

VL - 1

SP - 138

EP - 139

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

A2 - Anon, null

PB - IEEE

ER -