Monolithically Integrated Receiver Front End

In0.53Ga0.47As 53Ga, 47asp-i-n Amplifier

Chu Liang Cheng Chang, Robert P. H. Chang, Benjamin Tell, Sandra M. Zima Parker, Y. Ota, G. P. Vella-Coleiro, R. C. Miller, John L. Zilko, B. L. Kasper, Kevin F. Brown-Goebeler, V. D. Mattera

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Monolithically integrated InGaAs p-i-n-amplifiers have been successfully fabricated. The novel structure utilizes a vertical integration of a p-i-n diode and recessed-gate InP MISFET’s, while maintaining a planar surface for fine-line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFET’s with aluminum phosphorus oxide as gate insulator. At 400 Mbit/s, the receiver sensitivity is better than -27 dBm for 1 x 10-9 bit error rate.

Original languageEnglish
Pages (from-to)1439-1444
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume35
Issue number9
DOIs
Publication statusPublished - 1988

Fingerprint

Photolithography
Aluminum
Bit error rate
Phosphorus
Oxides
Buffers
Diodes
field effect transistors
receivers
amplifiers
phosphorus oxides
p-i-n diodes
preamplifiers
photolithography
bit error rate
aluminum oxides
buffers
insulators

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Chang, C. L. C., Chang, R. P. H., Tell, B., Zima Parker, S. M., Ota, Y., Vella-Coleiro, G. P., ... Mattera, V. D. (1988). Monolithically Integrated Receiver Front End: In0.53Ga0.47As 53Ga, 47asp-i-n Amplifier. IEEE Transactions on Electron Devices, 35(9), 1439-1444. https://doi.org/10.1109/16.2576

Monolithically Integrated Receiver Front End : In0.53Ga0.47As 53Ga, 47asp-i-n Amplifier. / Chang, Chu Liang Cheng; Chang, Robert P. H.; Tell, Benjamin; Zima Parker, Sandra M.; Ota, Y.; Vella-Coleiro, G. P.; Miller, R. C.; Zilko, John L.; Kasper, B. L.; Brown-Goebeler, Kevin F.; Mattera, V. D.

In: IEEE Transactions on Electron Devices, Vol. 35, No. 9, 1988, p. 1439-1444.

Research output: Contribution to journalArticle

Chang, CLC, Chang, RPH, Tell, B, Zima Parker, SM, Ota, Y, Vella-Coleiro, GP, Miller, RC, Zilko, JL, Kasper, BL, Brown-Goebeler, KF & Mattera, VD 1988, 'Monolithically Integrated Receiver Front End: In0.53Ga0.47As 53Ga, 47asp-i-n Amplifier', IEEE Transactions on Electron Devices, vol. 35, no. 9, pp. 1439-1444. https://doi.org/10.1109/16.2576
Chang, Chu Liang Cheng ; Chang, Robert P. H. ; Tell, Benjamin ; Zima Parker, Sandra M. ; Ota, Y. ; Vella-Coleiro, G. P. ; Miller, R. C. ; Zilko, John L. ; Kasper, B. L. ; Brown-Goebeler, Kevin F. ; Mattera, V. D. / Monolithically Integrated Receiver Front End : In0.53Ga0.47As 53Ga, 47asp-i-n Amplifier. In: IEEE Transactions on Electron Devices. 1988 ; Vol. 35, No. 9. pp. 1439-1444.
@article{2cd9a95f2ddf48da8c0e2938750b1f41,
title = "Monolithically Integrated Receiver Front End: In0.53Ga0.47As 53Ga, 47asp-i-n Amplifier",
abstract = "Monolithically integrated InGaAs p-i-n-amplifiers have been successfully fabricated. The novel structure utilizes a vertical integration of a p-i-n diode and recessed-gate InP MISFET’s, while maintaining a planar surface for fine-line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFET’s with aluminum phosphorus oxide as gate insulator. At 400 Mbit/s, the receiver sensitivity is better than -27 dBm for 1 x 10-9 bit error rate.",
author = "Chang, {Chu Liang Cheng} and Chang, {Robert P. H.} and Benjamin Tell and {Zima Parker}, {Sandra M.} and Y. Ota and Vella-Coleiro, {G. P.} and Miller, {R. C.} and Zilko, {John L.} and Kasper, {B. L.} and Brown-Goebeler, {Kevin F.} and Mattera, {V. D.}",
year = "1988",
doi = "10.1109/16.2576",
language = "English",
volume = "35",
pages = "1439--1444",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - Monolithically Integrated Receiver Front End

T2 - In0.53Ga0.47As 53Ga, 47asp-i-n Amplifier

AU - Chang, Chu Liang Cheng

AU - Chang, Robert P. H.

AU - Tell, Benjamin

AU - Zima Parker, Sandra M.

AU - Ota, Y.

AU - Vella-Coleiro, G. P.

AU - Miller, R. C.

AU - Zilko, John L.

AU - Kasper, B. L.

AU - Brown-Goebeler, Kevin F.

AU - Mattera, V. D.

PY - 1988

Y1 - 1988

N2 - Monolithically integrated InGaAs p-i-n-amplifiers have been successfully fabricated. The novel structure utilizes a vertical integration of a p-i-n diode and recessed-gate InP MISFET’s, while maintaining a planar surface for fine-line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFET’s with aluminum phosphorus oxide as gate insulator. At 400 Mbit/s, the receiver sensitivity is better than -27 dBm for 1 x 10-9 bit error rate.

AB - Monolithically integrated InGaAs p-i-n-amplifiers have been successfully fabricated. The novel structure utilizes a vertical integration of a p-i-n diode and recessed-gate InP MISFET’s, while maintaining a planar surface for fine-line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFET’s with aluminum phosphorus oxide as gate insulator. At 400 Mbit/s, the receiver sensitivity is better than -27 dBm for 1 x 10-9 bit error rate.

UR - http://www.scopus.com/inward/record.url?scp=0024070899&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024070899&partnerID=8YFLogxK

U2 - 10.1109/16.2576

DO - 10.1109/16.2576

M3 - Article

VL - 35

SP - 1439

EP - 1444

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 9

ER -