Monolithically integrated InGaAs p-i-n-amplifiers have been successfully fabricated. The novel structure utilizes a vertical integration of a p-i-n diode and recessed-gate InP MISFET’s, while maintaining a planar surface for fine-line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFET’s with aluminum phosphorus oxide as gate insulator. At 400 Mbit/s, the receiver sensitivity is better than -27 dBm for 1 x 10-9 bit error rate.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering