Monte Carlo simulation of transport properties in wide gap Hg3Se2I2

Lujin Min, Zhifu Liu, J. A. Peters, Yihui He, Mercouri G. Kanatzidis, Jingchuan Zhu, Bruce W. Wessels

Research output: Contribution to journalArticle

Abstract

Hg3Se2I2 is a promising chalcohalide semiconductor for x- and γ-ray room-temperature semiconductors detectors. In addition to having a high density and wide bandgap of 2.15 eV, it also possesses a relatively high electron mobility. Using Ensemble Monte Carlo simulation, we explored its transport properties and underlying factors responsible for its carrier mobility. The parameters used in the Monte Carlo simulations were obtained from experimental measurements and density functional theory calculations. The simulations indicate that the semiconductor has a high electron mobility of the order of 172 0.16 cm2 V-1 s-1 at room temperature. Electron mobility in Hg3Se2I2 was insensitive to impurity concentration for values less than 1015 cm-3

Original languageEnglish
Article number115003
JournalSemiconductor Science and Technology
Volume34
Issue number11
DOIs
Publication statusPublished - Oct 1 2019

Fingerprint

Electron mobility
electron mobility
Transport properties
transport properties
Semiconductor materials
Electron transport properties
Semiconductor detectors
simulation
Carrier mobility
room temperature
carrier mobility
Density functional theory
rays
Energy gap
Impurities
density functional theory
impurities
Temperature
detectors
Monte Carlo simulation

Keywords

  • Hg-based semiconductors
  • photoconductivity
  • wide gap semiconductor
  • γ-ray detector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Monte Carlo simulation of transport properties in wide gap Hg3Se2I2 . / Min, Lujin; Liu, Zhifu; Peters, J. A.; He, Yihui; Kanatzidis, Mercouri G.; Zhu, Jingchuan; Wessels, Bruce W.

In: Semiconductor Science and Technology, Vol. 34, No. 11, 115003, 01.10.2019.

Research output: Contribution to journalArticle

Min, Lujin ; Liu, Zhifu ; Peters, J. A. ; He, Yihui ; Kanatzidis, Mercouri G. ; Zhu, Jingchuan ; Wessels, Bruce W. / Monte Carlo simulation of transport properties in wide gap Hg3Se2I2 In: Semiconductor Science and Technology. 2019 ; Vol. 34, No. 11.
@article{e1fb2ca1bb3e4ed38b6cbd24cd741fe4,
title = "Monte Carlo simulation of transport properties in wide gap Hg3Se2I2",
abstract = "Hg3Se2I2 is a promising chalcohalide semiconductor for x- and γ-ray room-temperature semiconductors detectors. In addition to having a high density and wide bandgap of 2.15 eV, it also possesses a relatively high electron mobility. Using Ensemble Monte Carlo simulation, we explored its transport properties and underlying factors responsible for its carrier mobility. The parameters used in the Monte Carlo simulations were obtained from experimental measurements and density functional theory calculations. The simulations indicate that the semiconductor has a high electron mobility of the order of 172 0.16 cm2 V-1 s-1 at room temperature. Electron mobility in Hg3Se2I2 was insensitive to impurity concentration for values less than 1015 cm-3",
keywords = "Hg-based semiconductors, photoconductivity, wide gap semiconductor, γ-ray detector",
author = "Lujin Min and Zhifu Liu and Peters, {J. A.} and Yihui He and Kanatzidis, {Mercouri G.} and Jingchuan Zhu and Wessels, {Bruce W.}",
year = "2019",
month = "10",
day = "1",
doi = "10.1088/1361-6641/ab3fdd",
language = "English",
volume = "34",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "11",

}

TY - JOUR

T1 - Monte Carlo simulation of transport properties in wide gap Hg3Se2I2

AU - Min, Lujin

AU - Liu, Zhifu

AU - Peters, J. A.

AU - He, Yihui

AU - Kanatzidis, Mercouri G.

AU - Zhu, Jingchuan

AU - Wessels, Bruce W.

PY - 2019/10/1

Y1 - 2019/10/1

N2 - Hg3Se2I2 is a promising chalcohalide semiconductor for x- and γ-ray room-temperature semiconductors detectors. In addition to having a high density and wide bandgap of 2.15 eV, it also possesses a relatively high electron mobility. Using Ensemble Monte Carlo simulation, we explored its transport properties and underlying factors responsible for its carrier mobility. The parameters used in the Monte Carlo simulations were obtained from experimental measurements and density functional theory calculations. The simulations indicate that the semiconductor has a high electron mobility of the order of 172 0.16 cm2 V-1 s-1 at room temperature. Electron mobility in Hg3Se2I2 was insensitive to impurity concentration for values less than 1015 cm-3

AB - Hg3Se2I2 is a promising chalcohalide semiconductor for x- and γ-ray room-temperature semiconductors detectors. In addition to having a high density and wide bandgap of 2.15 eV, it also possesses a relatively high electron mobility. Using Ensemble Monte Carlo simulation, we explored its transport properties and underlying factors responsible for its carrier mobility. The parameters used in the Monte Carlo simulations were obtained from experimental measurements and density functional theory calculations. The simulations indicate that the semiconductor has a high electron mobility of the order of 172 0.16 cm2 V-1 s-1 at room temperature. Electron mobility in Hg3Se2I2 was insensitive to impurity concentration for values less than 1015 cm-3

KW - Hg-based semiconductors

KW - photoconductivity

KW - wide gap semiconductor

KW - γ-ray detector

UR - http://www.scopus.com/inward/record.url?scp=85075988660&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85075988660&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/ab3fdd

DO - 10.1088/1361-6641/ab3fdd

M3 - Article

AN - SCOPUS:85075988660

VL - 34

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 11

M1 - 115003

ER -