MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors

Woongkyu Lee, Cheol Jin Cho, Woo Chul Lee, Cheol Seong Hwang, Robert P. H. Chang, Seong Keun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Metallic MoO2 is proposed as a new oxide electrode for dynamic random-access memory (DRAM) capacitors. Although noble metal oxide electrodes including RuO2 and SrRuO3 have attracted interest as capacitor electrodes, these materials have critical instability problems of ease-of-reduction during the subsequent annealing process. In contrast, MoO2 shows excellent thermal stability of the structural and chemical properties even after annealing at 400 °C in both forming gas and O2 atmospheres. In addition, MoO2 electrodes induce the formation of a high temperature phase with a high dielectric constant, rutile TiO2, by atomic layer deposition at the relatively low temperature of 250 °C because of the structural homogeneity between MoO2 and rutile TiO2. These results demonstrate that MoO2 could be a promising electrode material for DRAM capacitors.

Original languageEnglish
Pages (from-to)13250-13256
Number of pages7
JournalJournal of Materials Chemistry C
Volume6
Issue number48
DOIs
Publication statusPublished - Jan 1 2018

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Oxides
Capacitors
Data storage equipment
Electrodes
Annealing
Strategic materials
Atomic layer deposition
Precious metals
Chemical properties
Structural properties
Thermodynamic stability
Permittivity
Gases
molybdenum dioxide
Temperature
titanium dioxide

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Cite this

MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors. / Lee, Woongkyu; Cho, Cheol Jin; Lee, Woo Chul; Hwang, Cheol Seong; Chang, Robert P. H.; Kim, Seong Keun.

In: Journal of Materials Chemistry C, Vol. 6, No. 48, 01.01.2018, p. 13250-13256.

Research output: Contribution to journalArticle

Lee, Woongkyu ; Cho, Cheol Jin ; Lee, Woo Chul ; Hwang, Cheol Seong ; Chang, Robert P. H. ; Kim, Seong Keun. / MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors. In: Journal of Materials Chemistry C. 2018 ; Vol. 6, No. 48. pp. 13250-13256.
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