MOS characteristics of c-face 4H-SiC

Z. Chen, A. C. Ahyi, X. Zhu, M. Li, T. Isaacs-Smith, J. R. Williams, L. C. Feldman

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide-semiconductor (O-S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (D it). Direct oxidation/passivation in NO yielded somewhat better I-V characteristics, though all passivation ambients produced approximately the same breakdown field strength. n-Channel MOSFETs showed high channel mobility at low field, which is likely caused by the presence of mobile ions at the O-S interface. Comparisons with the silicon face are presented for interface trap density, oxide breakdown field, and channel mobility. These comparisons suggest that the carbon face does not offer significant performance advantages.

Original languageEnglish
Pages (from-to)526-529
Number of pages4
JournalJournal of Electronic Materials
Issue number5
Publication statusPublished - May 2010


  • 4H-SiC
  • Carbon face
  • Channel mobility
  • Interface traps
  • Oxide breakdown

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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