MOS characteristics of c-face 4H-SiC

Z. Chen, A. C. Ahyi, X. Zhu, M. Li, T. Isaacs-Smith, J. R. Williams, Leonard C Feldman

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide-semiconductor (O-S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (D it). Direct oxidation/passivation in NO yielded somewhat better I-V characteristics, though all passivation ambients produced approximately the same breakdown field strength. n-Channel MOSFETs showed high channel mobility at low field, which is likely caused by the presence of mobile ions at the O-S interface. Comparisons with the silicon face are presented for interface trap density, oxide breakdown field, and channel mobility. These comparisons suggest that the carbon face does not offer significant performance advantages.

Original languageEnglish
Pages (from-to)526-529
Number of pages4
JournalJournal of Electronic Materials
Volume39
Issue number5
DOIs
Publication statusPublished - May 2010

Fingerprint

metal oxide semiconductors
Metals
MOSFET devices
Passivation
Carbon
Annealing
passivity
oxides
field effect transistors
breakdown
traps
Silicon
Field effect transistors
Oxides
annealing
Hydrogen
carbon
Capacitors
Ions
field strength

Keywords

  • 4H-SiC
  • Carbon face
  • Channel mobility
  • Interface traps
  • Oxide breakdown

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Chen, Z., Ahyi, A. C., Zhu, X., Li, M., Isaacs-Smith, T., Williams, J. R., & Feldman, L. C. (2010). MOS characteristics of c-face 4H-SiC. Journal of Electronic Materials, 39(5), 526-529. https://doi.org/10.1007/s11664-010-1096-5

MOS characteristics of c-face 4H-SiC. / Chen, Z.; Ahyi, A. C.; Zhu, X.; Li, M.; Isaacs-Smith, T.; Williams, J. R.; Feldman, Leonard C.

In: Journal of Electronic Materials, Vol. 39, No. 5, 05.2010, p. 526-529.

Research output: Contribution to journalArticle

Chen, Z, Ahyi, AC, Zhu, X, Li, M, Isaacs-Smith, T, Williams, JR & Feldman, LC 2010, 'MOS characteristics of c-face 4H-SiC', Journal of Electronic Materials, vol. 39, no. 5, pp. 526-529. https://doi.org/10.1007/s11664-010-1096-5
Chen Z, Ahyi AC, Zhu X, Li M, Isaacs-Smith T, Williams JR et al. MOS characteristics of c-face 4H-SiC. Journal of Electronic Materials. 2010 May;39(5):526-529. https://doi.org/10.1007/s11664-010-1096-5
Chen, Z. ; Ahyi, A. C. ; Zhu, X. ; Li, M. ; Isaacs-Smith, T. ; Williams, J. R. ; Feldman, Leonard C. / MOS characteristics of c-face 4H-SiC. In: Journal of Electronic Materials. 2010 ; Vol. 39, No. 5. pp. 526-529.
@article{09e4cede044e485b90ecfe1e63048a72,
title = "MOS characteristics of c-face 4H-SiC",
abstract = "Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide-semiconductor (O-S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (D it). Direct oxidation/passivation in NO yielded somewhat better I-V characteristics, though all passivation ambients produced approximately the same breakdown field strength. n-Channel MOSFETs showed high channel mobility at low field, which is likely caused by the presence of mobile ions at the O-S interface. Comparisons with the silicon face are presented for interface trap density, oxide breakdown field, and channel mobility. These comparisons suggest that the carbon face does not offer significant performance advantages.",
keywords = "4H-SiC, Carbon face, Channel mobility, Interface traps, Oxide breakdown",
author = "Z. Chen and Ahyi, {A. C.} and X. Zhu and M. Li and T. Isaacs-Smith and Williams, {J. R.} and Feldman, {Leonard C}",
year = "2010",
month = "5",
doi = "10.1007/s11664-010-1096-5",
language = "English",
volume = "39",
pages = "526--529",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "5",

}

TY - JOUR

T1 - MOS characteristics of c-face 4H-SiC

AU - Chen, Z.

AU - Ahyi, A. C.

AU - Zhu, X.

AU - Li, M.

AU - Isaacs-Smith, T.

AU - Williams, J. R.

AU - Feldman, Leonard C

PY - 2010/5

Y1 - 2010/5

N2 - Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide-semiconductor (O-S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (D it). Direct oxidation/passivation in NO yielded somewhat better I-V characteristics, though all passivation ambients produced approximately the same breakdown field strength. n-Channel MOSFETs showed high channel mobility at low field, which is likely caused by the presence of mobile ions at the O-S interface. Comparisons with the silicon face are presented for interface trap density, oxide breakdown field, and channel mobility. These comparisons suggest that the carbon face does not offer significant performance advantages.

AB - Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide-semiconductor (O-S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (D it). Direct oxidation/passivation in NO yielded somewhat better I-V characteristics, though all passivation ambients produced approximately the same breakdown field strength. n-Channel MOSFETs showed high channel mobility at low field, which is likely caused by the presence of mobile ions at the O-S interface. Comparisons with the silicon face are presented for interface trap density, oxide breakdown field, and channel mobility. These comparisons suggest that the carbon face does not offer significant performance advantages.

KW - 4H-SiC

KW - Carbon face

KW - Channel mobility

KW - Interface traps

KW - Oxide breakdown

UR - http://www.scopus.com/inward/record.url?scp=77954624967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954624967&partnerID=8YFLogxK

U2 - 10.1007/s11664-010-1096-5

DO - 10.1007/s11664-010-1096-5

M3 - Article

VL - 39

SP - 526

EP - 529

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -