Abstract
Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide-semiconductor (O-S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (D it). Direct oxidation/passivation in NO yielded somewhat better I-V characteristics, though all passivation ambients produced approximately the same breakdown field strength. n-Channel MOSFETs showed high channel mobility at low field, which is likely caused by the presence of mobile ions at the O-S interface. Comparisons with the silicon face are presented for interface trap density, oxide breakdown field, and channel mobility. These comparisons suggest that the carbon face does not offer significant performance advantages.
| Original language | English |
|---|---|
| Pages (from-to) | 526-529 |
| Number of pages | 4 |
| Journal | Journal of Electronic Materials |
| Volume | 39 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - May 2010 |
Fingerprint
Keywords
- 4H-SiC
- Carbon face
- Channel mobility
- Interface traps
- Oxide breakdown
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
Cite this
MOS characteristics of c-face 4H-SiC. / Chen, Z.; Ahyi, A. C.; Zhu, X.; Li, M.; Isaacs-Smith, T.; Williams, J. R.; Feldman, Leonard C.
In: Journal of Electronic Materials, Vol. 39, No. 5, 05.2010, p. 526-529.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - MOS characteristics of c-face 4H-SiC
AU - Chen, Z.
AU - Ahyi, A. C.
AU - Zhu, X.
AU - Li, M.
AU - Isaacs-Smith, T.
AU - Williams, J. R.
AU - Feldman, Leonard C
PY - 2010/5
Y1 - 2010/5
N2 - Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide-semiconductor (O-S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (D it). Direct oxidation/passivation in NO yielded somewhat better I-V characteristics, though all passivation ambients produced approximately the same breakdown field strength. n-Channel MOSFETs showed high channel mobility at low field, which is likely caused by the presence of mobile ions at the O-S interface. Comparisons with the silicon face are presented for interface trap density, oxide breakdown field, and channel mobility. These comparisons suggest that the carbon face does not offer significant performance advantages.
AB - Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide-semiconductor (O-S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (D it). Direct oxidation/passivation in NO yielded somewhat better I-V characteristics, though all passivation ambients produced approximately the same breakdown field strength. n-Channel MOSFETs showed high channel mobility at low field, which is likely caused by the presence of mobile ions at the O-S interface. Comparisons with the silicon face are presented for interface trap density, oxide breakdown field, and channel mobility. These comparisons suggest that the carbon face does not offer significant performance advantages.
KW - 4H-SiC
KW - Carbon face
KW - Channel mobility
KW - Interface traps
KW - Oxide breakdown
UR - http://www.scopus.com/inward/record.url?scp=77954624967&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77954624967&partnerID=8YFLogxK
U2 - 10.1007/s11664-010-1096-5
DO - 10.1007/s11664-010-1096-5
M3 - Article
AN - SCOPUS:77954624967
VL - 39
SP - 526
EP - 529
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 5
ER -