Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPxAs1-y

G. W. Charache, D. M. DePoy, J. E. Raynolds, P. F. Baldasaro, K. E. Miyano, T. Holden, F. H. Pollak, P. R. Sharps, M. L. Timmons, C. B. Geller, W. Mannstadt, R. Asahi, Arthur J Freeman, W. Wolf

Research output: Contribution to journalArticle

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Abstract

Degenerately doped (> 1019cm-3) n-type InxGa1-xAs (x∼0.67) and InPyAs1-y (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the low electron effective mass of these materials (m*19 cm-3 range, both the Moss-Burstein band gap shift and plasma reflection characteristics are particularly dramatic. For InGaAs films with a nominal undoped band gap of 0.6 eV and N = 5× 1019 cm-3, the fundamental absorption edge increased to 1.27 eV. InPAs films exhibit a shorter plasma wavelength (λp∼5 μm) in comparison to InGaAs films (λp∼6 μm) with similar doping concentrations. The behavior of the plasma wavelength and the fundamental absorption edge are investigated in terms of conduction band nonparabolicity and Γ-L valley separation using detailed band structure measurements and calculations.

Original languageEnglish
Pages (from-to)452-458
Number of pages7
JournalJournal of Applied Physics
Volume86
Issue number1
Publication statusPublished - Jul 1999

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Bryophytes
wavelengths
electro-optics
valleys
conduction bands
electrical properties
optical properties
shift
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Charache, G. W., DePoy, D. M., Raynolds, J. E., Baldasaro, P. F., Miyano, K. E., Holden, T., ... Wolf, W. (1999). Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPxAs1-y. Journal of Applied Physics, 86(1), 452-458.

Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPxAs1-y. / Charache, G. W.; DePoy, D. M.; Raynolds, J. E.; Baldasaro, P. F.; Miyano, K. E.; Holden, T.; Pollak, F. H.; Sharps, P. R.; Timmons, M. L.; Geller, C. B.; Mannstadt, W.; Asahi, R.; Freeman, Arthur J; Wolf, W.

In: Journal of Applied Physics, Vol. 86, No. 1, 07.1999, p. 452-458.

Research output: Contribution to journalArticle

Charache, GW, DePoy, DM, Raynolds, JE, Baldasaro, PF, Miyano, KE, Holden, T, Pollak, FH, Sharps, PR, Timmons, ML, Geller, CB, Mannstadt, W, Asahi, R, Freeman, AJ & Wolf, W 1999, 'Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPxAs1-y', Journal of Applied Physics, vol. 86, no. 1, pp. 452-458.
Charache GW, DePoy DM, Raynolds JE, Baldasaro PF, Miyano KE, Holden T et al. Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPxAs1-y. Journal of Applied Physics. 1999 Jul;86(1):452-458.
Charache, G. W. ; DePoy, D. M. ; Raynolds, J. E. ; Baldasaro, P. F. ; Miyano, K. E. ; Holden, T. ; Pollak, F. H. ; Sharps, P. R. ; Timmons, M. L. ; Geller, C. B. ; Mannstadt, W. ; Asahi, R. ; Freeman, Arthur J ; Wolf, W. / Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPxAs1-y. In: Journal of Applied Physics. 1999 ; Vol. 86, No. 1. pp. 452-458.
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AU - Raynolds, J. E.

AU - Baldasaro, P. F.

AU - Miyano, K. E.

AU - Holden, T.

AU - Pollak, F. H.

AU - Sharps, P. R.

AU - Timmons, M. L.

AU - Geller, C. B.

AU - Mannstadt, W.

AU - Asahi, R.

AU - Freeman, Arthur J

AU - Wolf, W.

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