Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPxAs1-y

G. W. Charache, D. M. DePoy, J. E. Raynolds, P. F. Baldasaro, K. E. Miyano, T. Holden, F. H. Pollak, P. R. Sharps, M. L. Timmons, C. B. Geller, W. Mannstadt, R. Asahi, Arthur J Freeman, W. Wolf

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Degenerately doped (> 1019cm-3) n-type InxGa1-xAs (x∼0.67) and InPyAs1-y (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the low electron effective mass of these materials (m*19 cm-3 range, both the Moss-Burstein band gap shift and plasma reflection characteristics are particularly dramatic. For InGaAs films with a nominal undoped band gap of 0.6 eV and N = 5× 1019 cm-3, the fundamental absorption edge increased to 1.27 eV. InPAs films exhibit a shorter plasma wavelength (λp∼5 μm) in comparison to InGaAs films (λp∼6 μm) with similar doping concentrations. The behavior of the plasma wavelength and the fundamental absorption edge are investigated in terms of conduction band nonparabolicity and Γ-L valley separation using detailed band structure measurements and calculations.

Original languageEnglish
Pages (from-to)452-458
Number of pages7
JournalJournal of Applied Physics
Volume86
Issue number1
Publication statusPublished - Jul 1999

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Moss-Burstein and plasma reflection characteristics of heavily doped n-type In<sub>x</sub>Ga<sub>1-x</sub>As and InP<sub>x</sub>As<sub>1-y</sub>'. Together they form a unique fingerprint.

  • Cite this

    Charache, G. W., DePoy, D. M., Raynolds, J. E., Baldasaro, P. F., Miyano, K. E., Holden, T., Pollak, F. H., Sharps, P. R., Timmons, M. L., Geller, C. B., Mannstadt, W., Asahi, R., Freeman, A. J., & Wolf, W. (1999). Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPxAs1-y. Journal of Applied Physics, 86(1), 452-458.