Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers

Alexander H. Mueller, Melissa A. Petruska, Marc Achermann, Donald J. Werder, Elshan A. Akhadov, Daniel D. Koleske, Mark A. Hoffbauer, Victor I. Klimov

Research output: Contribution to journalArticle

355 Citations (Scopus)

Abstract

Numerous technologies including solid-state lighting, displays, and traffic signals can benefit from efficient, color-selectable light sources that are driven electrically. Semiconductor nanocrystals are attractive types of chromophores that combine size-controlled emission colors and high emission efficiencies with excellent photostability and chemical flexibility. Applications of nanocrystals in light-emitting technologies, however, have been significantly hindered by difficulties in achieving direct electrical injection of carriers. Here we report the first successful demonstration of electroluminescence from an all-inorganic, nanocrystal-based architecture in which semiconductor nanocrystals are incorporated into a p-n junction formed from GaN injection layers. The critical step in the fabrication of these nanocrystal/GaN hybrid structures is the use of a novel deposition technique, energetic neutral atom beam lithography/epitaxy, that allows for the encapsulation of nanocrystals within a GaN matrix without adversely affecting either the nanocrystal integrity or its luminescence properties. We demonstrate electroluminescence (injection efficiencies of at least 1%) in both single- and two-color regimes using structures comprising either a single monolayer or a bilayer of nanocrystals.

Original languageEnglish
Pages (from-to)1039-1044
Number of pages6
JournalNano letters
Volume5
Issue number6
DOIs
Publication statusPublished - Jun 1 2005

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers'. Together they form a unique fingerprint.

  • Cite this

    Mueller, A. H., Petruska, M. A., Achermann, M., Werder, D. J., Akhadov, E. A., Koleske, D. D., Hoffbauer, M. A., & Klimov, V. I. (2005). Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers. Nano letters, 5(6), 1039-1044. https://doi.org/10.1021/nl050384x