Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers

Alexander H. Mueller, Melissa A. Petruska, Marc Achermann, Donald J. Werder, Elshan A. Akhadov, Daniel D. Koleske, Mark A. Hoffbauer, Victor I Klimov

Research output: Contribution to journalArticle

335 Citations (Scopus)

Abstract

Numerous technologies including solid-state lighting, displays, and traffic signals can benefit from efficient, color-selectable light sources that are driven electrically. Semiconductor nanocrystals are attractive types of chromophores that combine size-controlled emission colors and high emission efficiencies with excellent photostability and chemical flexibility. Applications of nanocrystals in light-emitting technologies, however, have been significantly hindered by difficulties in achieving direct electrical injection of carriers. Here we report the first successful demonstration of electroluminescence from an all-inorganic, nanocrystal-based architecture in which semiconductor nanocrystals are incorporated into a p-n junction formed from GaN injection layers. The critical step in the fabrication of these nanocrystal/GaN hybrid structures is the use of a novel deposition technique, energetic neutral atom beam lithography/epitaxy, that allows for the encapsulation of nanocrystals within a GaN matrix without adversely affecting either the nanocrystal integrity or its luminescence properties. We demonstrate electroluminescence (injection efficiencies of at least 1%) in both single- and two-color regimes using structures comprising either a single monolayer or a bilayer of nanocrystals.

Original languageEnglish
Pages (from-to)1039-1044
Number of pages6
JournalNano Letters
Volume5
Issue number6
DOIs
Publication statusPublished - Jun 2005

Fingerprint

Charge injection
Nanocrystals
Light emitting diodes
nanocrystals
light emitting diodes
injection
Semiconductor materials
Electroluminescence
Color
color
electroluminescence
Traffic signals
hybrid structures
Chromophores
neutral atoms
p-n junctions
Encapsulation
Epitaxial growth
illuminating
integrity

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Chemistry (miscellaneous)

Cite this

Mueller, A. H., Petruska, M. A., Achermann, M., Werder, D. J., Akhadov, E. A., Koleske, D. D., ... Klimov, V. I. (2005). Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers. Nano Letters, 5(6), 1039-1044. https://doi.org/10.1021/nl050384x

Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers. / Mueller, Alexander H.; Petruska, Melissa A.; Achermann, Marc; Werder, Donald J.; Akhadov, Elshan A.; Koleske, Daniel D.; Hoffbauer, Mark A.; Klimov, Victor I.

In: Nano Letters, Vol. 5, No. 6, 06.2005, p. 1039-1044.

Research output: Contribution to journalArticle

Mueller, AH, Petruska, MA, Achermann, M, Werder, DJ, Akhadov, EA, Koleske, DD, Hoffbauer, MA & Klimov, VI 2005, 'Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers', Nano Letters, vol. 5, no. 6, pp. 1039-1044. https://doi.org/10.1021/nl050384x
Mueller AH, Petruska MA, Achermann M, Werder DJ, Akhadov EA, Koleske DD et al. Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers. Nano Letters. 2005 Jun;5(6):1039-1044. https://doi.org/10.1021/nl050384x
Mueller, Alexander H. ; Petruska, Melissa A. ; Achermann, Marc ; Werder, Donald J. ; Akhadov, Elshan A. ; Koleske, Daniel D. ; Hoffbauer, Mark A. ; Klimov, Victor I. / Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers. In: Nano Letters. 2005 ; Vol. 5, No. 6. pp. 1039-1044.
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