Multidielectrics for GaAs MIS devices using composition-graded Al xGa1-xAs and oxidized AlAs

W. T. Tsang, M. Olmstead, Robert P. H. Chang

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Metal-insulator-semiconductor (MIS) structures were prepared by dry thermal oxidation of an AlAs layer that had been grown on a composition-graded Al xGa1-xAs layer on GaAs. The epitaxial layers were grown by molecular beam epitaxy. Capacitance-voltage (C-V) measurements of these MIS structures demonstrated the achievement of inversion behavior with essentially no hysteresis and flatband voltages ranging from 0 to 0.1 V, which correspond to a fixed interface charge density of less than 2×1010 cm -2. It was also found that the stress developed between the oxide film and the epilayer was reduced in these MIS structures.

Original languageEnglish
Pages (from-to)408-410
Number of pages3
JournalApplied Physics Letters
Volume34
Issue number6
DOIs
Publication statusPublished - 1979

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MIS (semiconductors)
semiconductor devices
electrical measurement
oxide films
molecular beam epitaxy
capacitance
hysteresis
inversions
oxidation
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Multidielectrics for GaAs MIS devices using composition-graded Al xGa1-xAs and oxidized AlAs. / Tsang, W. T.; Olmstead, M.; Chang, Robert P. H.

In: Applied Physics Letters, Vol. 34, No. 6, 1979, p. 408-410.

Research output: Contribution to journalArticle

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