Abstract
The use of ultrafast gating techniques allows us to resolve both spectrally and temporally the emission from short-lived neutral and negatively charged biexcitons in ultrasmall (sub-10 nm) CdSe nanocrystals (nanocrystal quantum dots). Because of "forced" overlap of electronic wave functions and reduced dielectric screening, these states are characterized by giant interaction energies of tens (neutral biexcitons) to hundreds (charged biexcitons) of meV. Both types of biexcitons show extremely short lifetimes (from sub-100 picoseconds to sub-picosecond time scales) that rapidly shorten with decreasing nanocrystal size. These ultrafast relaxation dynamics are explained in terms of highly efficient nonradiative Auger recombination.
| Original language | English |
|---|---|
| Article number | 245302 |
| Pages (from-to) | 2453021-2453025 |
| Number of pages | 5 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 68 |
| Issue number | 24 |
| Publication status | Published - Dec 2003 |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Multiexcitons confined within a subexcitonic volume : Spectroscopic and dynamical signatures of neutral and charged biexcitons in ultrasmall semiconductor nanocrystals. / Achermann, M.; Hollingsworth, J. A.; Klimov, Victor I.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 68, No. 24, 245302, 12.2003, p. 2453021-2453025.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Multiexcitons confined within a subexcitonic volume
T2 - Spectroscopic and dynamical signatures of neutral and charged biexcitons in ultrasmall semiconductor nanocrystals
AU - Achermann, M.
AU - Hollingsworth, J. A.
AU - Klimov, Victor I
PY - 2003/12
Y1 - 2003/12
N2 - The use of ultrafast gating techniques allows us to resolve both spectrally and temporally the emission from short-lived neutral and negatively charged biexcitons in ultrasmall (sub-10 nm) CdSe nanocrystals (nanocrystal quantum dots). Because of "forced" overlap of electronic wave functions and reduced dielectric screening, these states are characterized by giant interaction energies of tens (neutral biexcitons) to hundreds (charged biexcitons) of meV. Both types of biexcitons show extremely short lifetimes (from sub-100 picoseconds to sub-picosecond time scales) that rapidly shorten with decreasing nanocrystal size. These ultrafast relaxation dynamics are explained in terms of highly efficient nonradiative Auger recombination.
AB - The use of ultrafast gating techniques allows us to resolve both spectrally and temporally the emission from short-lived neutral and negatively charged biexcitons in ultrasmall (sub-10 nm) CdSe nanocrystals (nanocrystal quantum dots). Because of "forced" overlap of electronic wave functions and reduced dielectric screening, these states are characterized by giant interaction energies of tens (neutral biexcitons) to hundreds (charged biexcitons) of meV. Both types of biexcitons show extremely short lifetimes (from sub-100 picoseconds to sub-picosecond time scales) that rapidly shorten with decreasing nanocrystal size. These ultrafast relaxation dynamics are explained in terms of highly efficient nonradiative Auger recombination.
UR - http://www.scopus.com/inward/record.url?scp=1042276638&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=1042276638&partnerID=8YFLogxK
M3 - Article
VL - 68
SP - 2453021
EP - 2453025
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 24
M1 - 245302
ER -