Multiple scattering and planar dechanneling in silicon and germanium

Leonard C Feldman, B. R. Appleton

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

The dechanneling of MeV protons from the planar channels of silicon and germanium is investigated. The backscattering technique and transmission technique for measuring the dechanneling rate are compared and show good agreement. The data are treated in the framework of a diffusion model which describes the observed energy dependence of the dechanneling length. Various physical mechanisms which contribute to the diffusion are discussed and estimated. Direct measurements of the multiple scattering in the channels are compared to estimates of the diffusion constants.

Original languageEnglish
Pages (from-to)935-951
Number of pages17
JournalPhysical Review B
Volume8
Issue number3
DOIs
Publication statusPublished - 1973

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Germanium
Multiple scattering
Silicon
germanium
silicon
scattering
Backscattering
Protons
backscattering
protons
estimates
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Multiple scattering and planar dechanneling in silicon and germanium. / Feldman, Leonard C; Appleton, B. R.

In: Physical Review B, Vol. 8, No. 3, 1973, p. 935-951.

Research output: Contribution to journalArticle

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