N-Type Bi2Te3-xSex Nanoplates with Enhanced Thermoelectric Efficiency Driven by Wide-Frequency Phonon Scatterings and Synergistic Carrier Scatterings

Min Hong, Thomas C. Chasapis, Zhi Gang Chen, Lei Yang, Mercouri G Kanatzidis, G. Jeffrey Snyder, Jin Zou

Research output: Contribution to journalArticle

89 Citations (Scopus)

Abstract

Driven by the prospective applications of thermoelectric materials, massive efforts have been dedicated to enhancing the conversion efficiency. The latter is governed by the figure of merit (ZT), which is proportional to the power factor (S2σ) and inversely proportional to the thermal conductivity (κ). Here, we demonstrate the synthesis of high-quality ternary Bi2Te3-xSex nanoplates using a microwave-assisted surfactant-free solvothermal method. The obtained n-type Bi2Te2.7Se0.3 nanostructures exhibit a high ZT of 1.23 at 480 K measured from the corresponding sintered pellets, in which a remarkably low κ and a shift of peak S2σ to high temperature are observed. By detailed electron microscopy investigations, coupled with theoretical analysis on phonon transports, we propose that the achieved κ reduction is attributed to the strong wide-frequency phonon scatterings. The shifting of peak S2σ to high temperature is due to the weakened temperature dependent transport properties governed by the synergistic carrier scatterings and the suppressed bipolar effects by enlarging the band gap.

Original languageEnglish
Pages (from-to)4719-4727
Number of pages9
JournalACS Nano
Volume10
Issue number4
DOIs
Publication statusPublished - Apr 26 2016

Fingerprint

Phonon scattering
Scattering
thermoelectric materials
scattering
pellets
figure of merit
electron microscopy
thermal conductivity
transport properties
surfactants
microwaves
Surface-Active Agents
Transport properties
Temperature
Electron microscopy
Conversion efficiency
expansion
shift
Nanostructures
Thermal conductivity

Keywords

  • BiTeSe
  • nanostructuring
  • synergistic carrier scatterings
  • thermoelectric
  • wide-frequency phonon scatterings

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

N-Type Bi2Te3-xSex Nanoplates with Enhanced Thermoelectric Efficiency Driven by Wide-Frequency Phonon Scatterings and Synergistic Carrier Scatterings. / Hong, Min; Chasapis, Thomas C.; Chen, Zhi Gang; Yang, Lei; Kanatzidis, Mercouri G; Snyder, G. Jeffrey; Zou, Jin.

In: ACS Nano, Vol. 10, No. 4, 26.04.2016, p. 4719-4727.

Research output: Contribution to journalArticle

Hong, Min ; Chasapis, Thomas C. ; Chen, Zhi Gang ; Yang, Lei ; Kanatzidis, Mercouri G ; Snyder, G. Jeffrey ; Zou, Jin. / N-Type Bi2Te3-xSex Nanoplates with Enhanced Thermoelectric Efficiency Driven by Wide-Frequency Phonon Scatterings and Synergistic Carrier Scatterings. In: ACS Nano. 2016 ; Vol. 10, No. 4. pp. 4719-4727.
@article{3d2be4cd150e4f538f6d4eaa50e6345b,
title = "N-Type Bi2Te3-xSex Nanoplates with Enhanced Thermoelectric Efficiency Driven by Wide-Frequency Phonon Scatterings and Synergistic Carrier Scatterings",
abstract = "Driven by the prospective applications of thermoelectric materials, massive efforts have been dedicated to enhancing the conversion efficiency. The latter is governed by the figure of merit (ZT), which is proportional to the power factor (S2σ) and inversely proportional to the thermal conductivity (κ). Here, we demonstrate the synthesis of high-quality ternary Bi2Te3-xSex nanoplates using a microwave-assisted surfactant-free solvothermal method. The obtained n-type Bi2Te2.7Se0.3 nanostructures exhibit a high ZT of 1.23 at 480 K measured from the corresponding sintered pellets, in which a remarkably low κ and a shift of peak S2σ to high temperature are observed. By detailed electron microscopy investigations, coupled with theoretical analysis on phonon transports, we propose that the achieved κ reduction is attributed to the strong wide-frequency phonon scatterings. The shifting of peak S2σ to high temperature is due to the weakened temperature dependent transport properties governed by the synergistic carrier scatterings and the suppressed bipolar effects by enlarging the band gap.",
keywords = "BiTeSe, nanostructuring, synergistic carrier scatterings, thermoelectric, wide-frequency phonon scatterings",
author = "Min Hong and Chasapis, {Thomas C.} and Chen, {Zhi Gang} and Lei Yang and Kanatzidis, {Mercouri G} and Snyder, {G. Jeffrey} and Jin Zou",
year = "2016",
month = "4",
day = "26",
doi = "10.1021/acsnano.6b01156",
language = "English",
volume = "10",
pages = "4719--4727",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "4",

}

TY - JOUR

T1 - N-Type Bi2Te3-xSex Nanoplates with Enhanced Thermoelectric Efficiency Driven by Wide-Frequency Phonon Scatterings and Synergistic Carrier Scatterings

AU - Hong, Min

AU - Chasapis, Thomas C.

AU - Chen, Zhi Gang

AU - Yang, Lei

AU - Kanatzidis, Mercouri G

AU - Snyder, G. Jeffrey

AU - Zou, Jin

PY - 2016/4/26

Y1 - 2016/4/26

N2 - Driven by the prospective applications of thermoelectric materials, massive efforts have been dedicated to enhancing the conversion efficiency. The latter is governed by the figure of merit (ZT), which is proportional to the power factor (S2σ) and inversely proportional to the thermal conductivity (κ). Here, we demonstrate the synthesis of high-quality ternary Bi2Te3-xSex nanoplates using a microwave-assisted surfactant-free solvothermal method. The obtained n-type Bi2Te2.7Se0.3 nanostructures exhibit a high ZT of 1.23 at 480 K measured from the corresponding sintered pellets, in which a remarkably low κ and a shift of peak S2σ to high temperature are observed. By detailed electron microscopy investigations, coupled with theoretical analysis on phonon transports, we propose that the achieved κ reduction is attributed to the strong wide-frequency phonon scatterings. The shifting of peak S2σ to high temperature is due to the weakened temperature dependent transport properties governed by the synergistic carrier scatterings and the suppressed bipolar effects by enlarging the band gap.

AB - Driven by the prospective applications of thermoelectric materials, massive efforts have been dedicated to enhancing the conversion efficiency. The latter is governed by the figure of merit (ZT), which is proportional to the power factor (S2σ) and inversely proportional to the thermal conductivity (κ). Here, we demonstrate the synthesis of high-quality ternary Bi2Te3-xSex nanoplates using a microwave-assisted surfactant-free solvothermal method. The obtained n-type Bi2Te2.7Se0.3 nanostructures exhibit a high ZT of 1.23 at 480 K measured from the corresponding sintered pellets, in which a remarkably low κ and a shift of peak S2σ to high temperature are observed. By detailed electron microscopy investigations, coupled with theoretical analysis on phonon transports, we propose that the achieved κ reduction is attributed to the strong wide-frequency phonon scatterings. The shifting of peak S2σ to high temperature is due to the weakened temperature dependent transport properties governed by the synergistic carrier scatterings and the suppressed bipolar effects by enlarging the band gap.

KW - BiTeSe

KW - nanostructuring

KW - synergistic carrier scatterings

KW - thermoelectric

KW - wide-frequency phonon scatterings

UR - http://www.scopus.com/inward/record.url?scp=84967309065&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84967309065&partnerID=8YFLogxK

U2 - 10.1021/acsnano.6b01156

DO - 10.1021/acsnano.6b01156

M3 - Article

AN - SCOPUS:84967309065

VL - 10

SP - 4719

EP - 4727

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 4

ER -