Abstract
Driven by the prospective applications of thermoelectric materials, massive efforts have been dedicated to enhancing the conversion efficiency. The latter is governed by the figure of merit (ZT), which is proportional to the power factor (S2σ) and inversely proportional to the thermal conductivity (κ). Here, we demonstrate the synthesis of high-quality ternary Bi2Te3-xSex nanoplates using a microwave-assisted surfactant-free solvothermal method. The obtained n-type Bi2Te2.7Se0.3 nanostructures exhibit a high ZT of 1.23 at 480 K measured from the corresponding sintered pellets, in which a remarkably low κ and a shift of peak S2σ to high temperature are observed. By detailed electron microscopy investigations, coupled with theoretical analysis on phonon transports, we propose that the achieved κ reduction is attributed to the strong wide-frequency phonon scatterings. The shifting of peak S2σ to high temperature is due to the weakened temperature dependent transport properties governed by the synergistic carrier scatterings and the suppressed bipolar effects by enlarging the band gap.
| Original language | English |
|---|---|
| Pages (from-to) | 4719-4727 |
| Number of pages | 9 |
| Journal | ACS Nano |
| Volume | 10 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 26 2016 |
Fingerprint
Keywords
- BiTeSe
- nanostructuring
- synergistic carrier scatterings
- thermoelectric
- wide-frequency phonon scatterings
ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
N-Type Bi2Te3-xSex Nanoplates with Enhanced Thermoelectric Efficiency Driven by Wide-Frequency Phonon Scatterings and Synergistic Carrier Scatterings. / Hong, Min; Chasapis, Thomas C.; Chen, Zhi Gang; Yang, Lei; Kanatzidis, Mercouri G; Snyder, G. Jeffrey; Zou, Jin.
In: ACS Nano, Vol. 10, No. 4, 26.04.2016, p. 4719-4727.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - N-Type Bi2Te3-xSex Nanoplates with Enhanced Thermoelectric Efficiency Driven by Wide-Frequency Phonon Scatterings and Synergistic Carrier Scatterings
AU - Hong, Min
AU - Chasapis, Thomas C.
AU - Chen, Zhi Gang
AU - Yang, Lei
AU - Kanatzidis, Mercouri G
AU - Snyder, G. Jeffrey
AU - Zou, Jin
PY - 2016/4/26
Y1 - 2016/4/26
N2 - Driven by the prospective applications of thermoelectric materials, massive efforts have been dedicated to enhancing the conversion efficiency. The latter is governed by the figure of merit (ZT), which is proportional to the power factor (S2σ) and inversely proportional to the thermal conductivity (κ). Here, we demonstrate the synthesis of high-quality ternary Bi2Te3-xSex nanoplates using a microwave-assisted surfactant-free solvothermal method. The obtained n-type Bi2Te2.7Se0.3 nanostructures exhibit a high ZT of 1.23 at 480 K measured from the corresponding sintered pellets, in which a remarkably low κ and a shift of peak S2σ to high temperature are observed. By detailed electron microscopy investigations, coupled with theoretical analysis on phonon transports, we propose that the achieved κ reduction is attributed to the strong wide-frequency phonon scatterings. The shifting of peak S2σ to high temperature is due to the weakened temperature dependent transport properties governed by the synergistic carrier scatterings and the suppressed bipolar effects by enlarging the band gap.
AB - Driven by the prospective applications of thermoelectric materials, massive efforts have been dedicated to enhancing the conversion efficiency. The latter is governed by the figure of merit (ZT), which is proportional to the power factor (S2σ) and inversely proportional to the thermal conductivity (κ). Here, we demonstrate the synthesis of high-quality ternary Bi2Te3-xSex nanoplates using a microwave-assisted surfactant-free solvothermal method. The obtained n-type Bi2Te2.7Se0.3 nanostructures exhibit a high ZT of 1.23 at 480 K measured from the corresponding sintered pellets, in which a remarkably low κ and a shift of peak S2σ to high temperature are observed. By detailed electron microscopy investigations, coupled with theoretical analysis on phonon transports, we propose that the achieved κ reduction is attributed to the strong wide-frequency phonon scatterings. The shifting of peak S2σ to high temperature is due to the weakened temperature dependent transport properties governed by the synergistic carrier scatterings and the suppressed bipolar effects by enlarging the band gap.
KW - BiTeSe
KW - nanostructuring
KW - synergistic carrier scatterings
KW - thermoelectric
KW - wide-frequency phonon scatterings
UR - http://www.scopus.com/inward/record.url?scp=84967309065&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84967309065&partnerID=8YFLogxK
U2 - 10.1021/acsnano.6b01156
DO - 10.1021/acsnano.6b01156
M3 - Article
AN - SCOPUS:84967309065
VL - 10
SP - 4719
EP - 4727
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 4
ER -