Abstract
The synthesis, characterization and properties of the first n-type thiopene-based conductor is reported. It can be used in thin film transistors (TFT) of n-type which are crucial in fabrication of complementary circuits. The molecular, thermal and semiconducting properties are studied using various spectroscopic, microscopic and X ray techniques. The results reveal remarkable congruencies both wihin and between n-type and p-type materials.
| Original language | English |
|---|---|
| Pages (from-to) | 33-38 |
| Number of pages | 6 |
| Journal | Advanced Materials |
| Volume | 15 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 3 2003 |
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ASJC Scopus subject areas
- Materials Science(all)
Cite this
n-type building blocks for organic electronics : A homologous family of fluorocarbon-substituted thiophene oligomers with high carrier mobility. / Facchetti, Antonio; Mushrush, Melissa; Katz, Howard E.; Marks, Tobin J.
In: Advanced Materials, Vol. 15, No. 1, 03.01.2003, p. 33-38.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - n-type building blocks for organic electronics
T2 - A homologous family of fluorocarbon-substituted thiophene oligomers with high carrier mobility
AU - Facchetti, Antonio
AU - Mushrush, Melissa
AU - Katz, Howard E.
AU - Marks, Tobin J.
PY - 2003/1/3
Y1 - 2003/1/3
N2 - The synthesis, characterization and properties of the first n-type thiopene-based conductor is reported. It can be used in thin film transistors (TFT) of n-type which are crucial in fabrication of complementary circuits. The molecular, thermal and semiconducting properties are studied using various spectroscopic, microscopic and X ray techniques. The results reveal remarkable congruencies both wihin and between n-type and p-type materials.
AB - The synthesis, characterization and properties of the first n-type thiopene-based conductor is reported. It can be used in thin film transistors (TFT) of n-type which are crucial in fabrication of complementary circuits. The molecular, thermal and semiconducting properties are studied using various spectroscopic, microscopic and X ray techniques. The results reveal remarkable congruencies both wihin and between n-type and p-type materials.
UR - http://www.scopus.com/inward/record.url?scp=0037415118&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037415118&partnerID=8YFLogxK
U2 - 10.1002/adma.200390003
DO - 10.1002/adma.200390003
M3 - Article
VL - 15
SP - 33
EP - 38
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 1
ER -