Abstract
n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm2 at 88 mW/cm2 of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0%±0.5% for conversion of natural sunlight (65 mW/cm2) to electricity, with open circuit voltages Voc of 0.70-0.72 V, short circuit currents of 16-17 mA/cm 2, and fill factors of 0.52-0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.
| Original language | English |
|---|---|
| Pages (from-to) | 115-117 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 43 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1983 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
N-type GaAs photoanodes in acetonitrile : Design of a 10.0% efficient photoelectrode. / Gronet, Chris M.; Lewis, Nathan S.
In: Applied Physics Letters, Vol. 43, No. 1, 1983, p. 115-117.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - N-type GaAs photoanodes in acetonitrile
T2 - Design of a 10.0% efficient photoelectrode
AU - Gronet, Chris M.
AU - Lewis, Nathan S
PY - 1983
Y1 - 1983
N2 - n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm2 at 88 mW/cm2 of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0%±0.5% for conversion of natural sunlight (65 mW/cm2) to electricity, with open circuit voltages Voc of 0.70-0.72 V, short circuit currents of 16-17 mA/cm 2, and fill factors of 0.52-0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.
AB - n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm2 at 88 mW/cm2 of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0%±0.5% for conversion of natural sunlight (65 mW/cm2) to electricity, with open circuit voltages Voc of 0.70-0.72 V, short circuit currents of 16-17 mA/cm 2, and fill factors of 0.52-0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.
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U2 - 10.1063/1.94148
DO - 10.1063/1.94148
M3 - Article
VL - 43
SP - 115
EP - 117
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
ER -