N-type GaAs photoanodes in acetonitrile: Design of a 10.0% efficient photoelectrode

Chris M. Gronet, Nathan S. Lewis

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Abstract

n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm2 at 88 mW/cm2 of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0%±0.5% for conversion of natural sunlight (65 mW/cm2) to electricity, with open circuit voltages Voc of 0.70-0.72 V, short circuit currents of 16-17 mA/cm 2, and fill factors of 0.52-0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.

Original languageEnglish
Pages (from-to)115-117
Number of pages3
JournalApplied Physics Letters
Volume43
Issue number1
DOIs
Publication statusPublished - Dec 1 1983

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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