N-type GaAs photoanodes in acetonitrile: Design of a 10.0% efficient photoelectrode

Chris M. Gronet; Nathan S. Lewis

doi:10.1063/1.94148

N-type GaAs photoanodes in acetonitrile: Design of a 10.0% efficient photoelectrode

Chris M. Gronet, Nathan S. Lewis

California Institute of Technology

Research output: Contribution to journal › Article

26 Citations (Scopus)

Abstract

n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm² at 88 mW/cm² of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0%±0.5% for conversion of natural sunlight (65 mW/cm²) to electricity, with open circuit voltages V_oc of 0.70-0.72 V, short circuit currents of 16-17 mA/cm ², and fill factors of 0.52-0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.

Original language	English
Pages (from-to)	115-117
Number of pages	3
Journal	Applied Physics Letters
Volume	43
Issue number	1
DOIs	https://doi.org/10.1063/1.94148
Publication status	Published - Dec 1 1983

Fingerprint

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Gronet, C. M., & Lewis, N. S. (1983). N-type GaAs photoanodes in acetonitrile: Design of a 10.0% efficient photoelectrode. Applied Physics Letters, 43(1), 115-117. https://doi.org/10.1063/1.94148

@article{04d4c269194243faad9896474fa9bf29,

title = "N-type GaAs photoanodes in acetonitrile: Design of a 10.0% efficient photoelectrode",

abstract = "n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm2 at 88 mW/cm2 of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0%±0.5% for conversion of natural sunlight (65 mW/cm2) to electricity, with open circuit voltages Voc of 0.70-0.72 V, short circuit currents of 16-17 mA/cm 2, and fill factors of 0.52-0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.",

author = "Gronet, {Chris M.} and Lewis, {Nathan S.}",

year = "1983",

month = dec

day = "1",

doi = "10.1063/1.94148",

language = "English",

volume = "43",

pages = "115--117",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - N-type GaAs photoanodes in acetonitrile

T2 - Design of a 10.0% efficient photoelectrode

AU - Gronet, Chris M.

AU - Lewis, Nathan S.

PY - 1983/12/1

Y1 - 1983/12/1

N2 - n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm2 at 88 mW/cm2 of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0%±0.5% for conversion of natural sunlight (65 mW/cm2) to electricity, with open circuit voltages Voc of 0.70-0.72 V, short circuit currents of 16-17 mA/cm 2, and fill factors of 0.52-0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.

AB - n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm2 at 88 mW/cm2 of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0%±0.5% for conversion of natural sunlight (65 mW/cm2) to electricity, with open circuit voltages Voc of 0.70-0.72 V, short circuit currents of 16-17 mA/cm 2, and fill factors of 0.52-0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.

UR - http://www.scopus.com/inward/record.url?scp=0041405148&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041405148&partnerID=8YFLogxK

U2 - 10.1063/1.94148

DO - 10.1063/1.94148

M3 - Article

AN - SCOPUS:0041405148

VL - 43

SP - 115

EP - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -

Access to Document

10.1063/1.94148