N-type GaAs photoanodes in acetonitrile

Design of a 10.0% efficient photoelectrode

Chris M. Gronet, Nathan S Lewis

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm2 at 88 mW/cm2 of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0%±0.5% for conversion of natural sunlight (65 mW/cm2) to electricity, with open circuit voltages Voc of 0.70-0.72 V, short circuit currents of 16-17 mA/cm 2, and fill factors of 0.52-0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.

Original languageEnglish
Pages (from-to)115-117
Number of pages3
JournalApplied Physics Letters
Volume43
Issue number1
DOIs
Publication statusPublished - 1983

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short circuit currents
acetonitrile
n-type semiconductors
sunlight
minority carriers
electricity
open circuit voltage
halogens
photocurrents
tungsten
electrolytes
irradiation
electrodes
liquids
cells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

N-type GaAs photoanodes in acetonitrile : Design of a 10.0% efficient photoelectrode. / Gronet, Chris M.; Lewis, Nathan S.

In: Applied Physics Letters, Vol. 43, No. 1, 1983, p. 115-117.

Research output: Contribution to journalArticle

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abstract = "n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm2 at 88 mW/cm2 of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0{\%}±0.5{\%} for conversion of natural sunlight (65 mW/cm2) to electricity, with open circuit voltages Voc of 0.70-0.72 V, short circuit currents of 16-17 mA/cm 2, and fill factors of 0.52-0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.",
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